Crystal and electronic structure engineering of epitaxial silicene

外延硅烯晶体与电子结构工程

• 批准号: 24810011
• 负责人: FLEURENCE Antoine
• 金额: $ 1.91万
• 依托单位: Japan Advanced Institute of Science and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Research Activity Start-up
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-08-31 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-24810011/
• 关键词: シリセン; 二次元物質; 走査トンネル顕微鏡; 局所状態密度; バンドエンジニアリング; 表面・界面物性; 電子・電気材料; ナノ材料

Silicene on ZrB2(0001) thin films grown on Si(111) is a perfect test bench for the study of this two-dimensional material, which only exists in epitaxial forms. We particularly investigated (i) the local origin of the electronic states of silicene and (ii) how the properties of silicene can be tuned upon adsorption of foreign atoms. Our study revealed the microscopic origin of the previously resolved pi states and pointed out a clear correlation between the local conformation of the Si atoms and the contribution of their pz orbital to those states. Upon adsorption of potassium atoms, we found out that there is no change in the silicene structure and that an electron donation to silicene occurs. It also causes the hybridization between ZrB2(0001) surface state and silicene pi states, which are decoupled in the pristine case. The investigation of the hydrogenation of silicene suggests that a capping layer forms without affecting significantly the internal structure of silicene.

在 Si(111) 上生长的 ZrB2(0001) 薄膜上的硅烯是研究这种仅以外延形式存在的二维材料的完美测试台。我们特别研究了（i）硅烯电子态的局部起源以及（ii）如何通过吸附外来原子来调节硅烯的性质。我们的研究揭示了先前解析的 pi 态的微观起源，并指出 Si 原子的局部构象与其 pz 轨道对这些态的贡献之间存在明显的相关性。吸附钾原子后，我们发现硅烯结构没有变化，并且发生了向硅烯的电子捐赠。它还引起 ZrB2(0001) 表面态和硅烯 pi 态之间的杂化，这在原始情况下是解耦的。对硅烯氢化的研究表明，覆盖层的形成不会显着影响硅烯的内部结构。

项目成果

Silicene : experimental evidence and properties of the graphene-like form of silicon

硅烯：硅的类石墨烯形式的实验证据和特性

• 发表时间: 2014
• 作者: A. Fleurence

Electronic structure and chemistry of epitaxial silicene on zirconium diboride substrates

二硼化锆衬底上外延硅烯的电子结构和化学性质

• 作者: R. Friedlein;A. Fleurence;F. Bussolotti;Y. Yamada-Takamura
• 通讯作者: Y. Yamada-Takamura

Buckling-inducedπ-band gap opening in epitaxial silicene

外延硅烯中屈曲引起的 π 带隙开口

• 发表时间: 2012
• 期刊: 30, Photon factory News
• 作者: R. Friedlein;A. Fleurence;and Y. Yamada-Takamura
• 通讯作者: and Y. Yamada-Takamura

Epitaxial Silicene - tunable hybridization with the substrate and weak interactions with epitaxial organic overlayers

外延硅烯 - 与衬底的可调杂化以及与外延有机覆盖层的弱相互作用

• 作者: R. Friedlein;F. Bussolotti;A. Fleurence;Y. Yamada-Takamura
• 通讯作者: Y. Yamada-Takamura

Tuning of silicene-substrate interactions with potassium adsorption

• DOI: 10.1063/1.4808214
• 发表时间: 2013-06-03
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Friedlein, R.;Fleurence, A.;Yamada-Takamura, Y.
• 通讯作者: Yamada-Takamura, Y.