Basic research of high-mobility transistor with layered MoS2 channel
Basic research of high-mobility transistor with layered MoS2 channel
批准号:
25889022
负责人:
WAKABAYASHI Hitoshi
金额:
$1.75万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Research Activity Start-up
财政年份:
2013
资助国家:
日本
项目状态:
已结题
起止时间:
2013-08-30 至 2015-03-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
期刊论文(8)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Multi-Layered MoS2 Thin Film Formed by High- Temperature Sputtering for Enhancement-Mode nMOSFETs
用于增强型 nMOSFET 的高温溅射多层 MoS2 薄膜
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[T. Ohashi, H. Wakabayashi, et. al.]
通讯作者:
et. al.
Progress and Benchmarking of CMOS-Device Technologies
CMOS 器件技术的进展和基准测试
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[T. Ohashi, H. Wakabayashi, et. al., H. Wakabayashi, Hitoshi Wakabayashi]
通讯作者:
Hitoshi Wakabayashi
DOI:
--
发表时间:
2015
期刊:
影响因子:
--
作者:
[Takumi Ohashi, Kohei Suda, Seiya Ishihara, Naomi Sawamoto, Shimpei Yamaguchi, Kentaro Matsuura, Kuniyuki Kakushima, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura and Hitoshi Wakabayashi, H. Wakabayashi]
通讯作者:
H. Wakabayashi
DOI:
10.7567/jjap.54.04dn08
发表时间:
2015-03
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[T. Ohashi;K. Suda;S. Ishihara;N. Sawamoto;Shimpei Yamaguchi;K. Matsuura;K. Kakushima;N. Sugii;A. Nishiyama;Y. Kataoka;K. Natori;K. Tsutsui;H. Iwai;A. Ogura;H. Wakabayashi]
通讯作者:
T. Ohashi;K. Suda;S. Ishihara;N. Sawamoto;Shimpei Yamaguchi;K. Matsuura;K. Kakushima;N. Sugii;A. Nishiyama;Y. Kataoka;K. Natori;K. Tsutsui;H. Iwai;A. Ogura;H. Wakabayashi
Sputtered MoS2 Film for Future High-Performance Nanoelectronic Devices
用于未来高性能纳米电子器件的溅射 MoS2 薄膜
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[T. Ohashi, Hitoshi Wakabayashi, et. al]
通讯作者:
et. al
共 8 条
Development of thermal comfort estimation method during water exercise concerning physical characteristics and exercise intensity
-
批准号:19800029
-
项目类别:Grant-in-Aid for Young Scientists (Start-up)
-
资助金额:$1.97万
-
财政年份:2007
-
负责人:WAKABAYASHI Hitoshi
-
依托单位:
海外基金