Studies on optical nondestructive detection methods of small crystal defects in the next generation of silicon wafers

下一代硅片微小晶体缺陷光学无损检测方法研究

基本信息

  • 批准号:
    10450008
  • 负责人:
  • 金额:
    $ 3.78万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1998
  • 资助国家:
    日本
  • 起止时间:
    1998 至 2001
  • 项目状态:
    已结题

项目摘要

This research has been done to develop optical nondestructive methods with high-sensitivity for detecting small crystal defects in the next generation of silicon substrates, which is one of the most important issues to be solved for electronics industries, and the following research results have been obtained ;(1) In order to observe residual strains and crystal defects in SOI which is a promising substrate for the next generation of high-speed LSI, a reflection type of infrared polariscope has been developed to detect a small amount of birefringence induced by strains and defects when the probing light is propagating through the silicon layer and also reflecting back from the interface between silicon layer and insulator. By using this instrument developed here, we found that the residual strains and defects caused by lattice mismatching in SOS, which was one of SOI, were reduced by laser annealing. In this way, we demonstrated the usefulness of the reflection type of polariscope deve … More loped here.(2) A high-sensitivity scanning system for detecting infrared birefringence in silicon wafers has been developed by improving the scanning infrared polariscope which was developed for the qualitaive characterization of residual strains in compound semiconductors. By using this system, we observed defect-induced birefringence due to slip lines, OSF, and etc., (b) process-induced birefringence caused near the holding region during thermal treatment, (c) a small amount of birefringence induced by the weight of silicon wafer itself. In this way, we demonstrated the usefulness of the high-sensitivity scanning system for detecting infrared birefringence in silicon wafers.(3) We have tried to measure birefringence in dislocation-free silicon ingot by improving the high-sensitivity birefringence detecting system. We found that there is a small amount of optical anisotropy induced by an interaction between light wave and local electric field in silicon although it was considered to be optically isotropic by a classical optic theory. This optical anisotropy was observed when the light wave was propagating along the crystallo graphic <110> direction. Furthermore, we found a extremely small amount of birefringence relating probably to spatial distribution of point defects when we introduced the light wave along the <100> direction that the optical anisotropy was not active. This is indicative of a possibility that we may characterize the distribution of point defects, which is recognized up to now to be very difficult. Less
本研究旨在发展高灵敏度的光学无损检测方法,用于检测下一代硅衬底中的小晶体缺陷,这是电子工业需要解决的重要问题之一,并取得了以下研究成果:(1)为了观察作为下一代高速LSI的有希望的衬底的SOI中的残余应变和晶体缺陷,已经开发了反射型红外偏振镜,以检测当探测光传播通过硅层并且还从硅层和绝缘体之间的界面反射回来时由应变和缺陷引起的少量双折射。利用研制的激光退火装置对SOI材料SOS进行了退火实验,发现激光退火可以减少SOI材料中由于晶格失配引起的残余应变和缺陷。用这种方法,我们证明了反射式偏光镜装置的实用性 ...更多信息 loped在这里。(2)对用于定性表征化合物半导体残余应变的扫描红外偏光镜进行了改进,研制了一种高灵敏度的扫描系统,用于检测硅片的红外双折射。通过使用该系统,我们观察到由于滑移线、OSF等引起的缺陷诱导双折射,(b)在热处理期间在保持区域附近引起的工艺引起的双折射,(c)由硅晶片本身的重量引起的少量双折射。通过这种方式,我们证明了高灵敏度扫描系统用于检测硅晶片中的红外双折射的有用性。(3)通过改进高灵敏度双折射测量系统,尝试测量无位错硅锭的双折射。我们发现,虽然经典光学理论认为硅是光学各向同性的,但由于光波与局域电场的相互作用,硅中也存在少量的光学各向异性。当光波沿晶体学方向沿着传播时,观察到这种光学各向异性<110>。此外,我们发现,当我们引入光波沿着方向,光学各向异性是不活跃的双折射可能与点缺陷的空间分布的非常少量<100>。这表明我们可以描述点缺陷的分布的可能性,这到目前为止被认为是非常困难的。少

项目成果

期刊论文数量(26)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
福澤理行, 儲涛, 山田正良: "赤外光弾性法を用いた半導体ウェハ・デバイス中の歪み分布測定"日本材料学会会誌「材料」. 特集号 半導体エレクトロニクス(印刷中). (2002)
Yoshiyuki Fukuzawa、Takeo、Masayoshi Yamada:“使用红外光弹性方法测量半导体晶片和器件中的应变分布”,日本材料学会杂志“半导体电子学特刊”(2002 年出版)。
  • DOI:
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    0
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M.Fukuzawa,M.Yamada: "Photoelastic characterization of Si wafers by scanning infrared polariscope"Journal of Crystal Growth. (印刷中). (2001)
M.Fukuzawa、M.Yamada:“通过扫描红外偏光镜对硅晶片进行光弹性表征”《晶体生长杂志》(出版中)。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Masayoshi Yamada, Tao Chu: "Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope"Journal of Crystal Growth. 210. 102-106 (2000)
Masayoshi Yamada、Tao Chu:“用红外偏光镜反射型异质外延层中诱导的应变的显微观察”晶体生长杂志。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
M. Fukuzawa and M. Yamada: "Photoelastic characterization of Si wafers by scanning infrared olariscope"Journal of Crystal Gtowth. 229. 22-25 (2001)
M. Fukuzawa 和 M. Yamada:“通过扫描红外偏振镜对硅晶片进行光弹性表征”水晶 Gtowth 杂志。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Masayoshi Yamada and Tao Chu: "Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope"Journal of Crystal Growth. 210. 102-106 (2000)
Masayoshi Yamada和Tao Chu:“用反射型红外偏光镜显微观察异质外延层中诱导的应变”Journal of Crystal Growth。
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  • 影响因子:
    0
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YAMADA Masayoshi其他文献

YAMADA Masayoshi的其他文献

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{{ truncateString('YAMADA Masayoshi', 18)}}的其他基金

Establishment of psychrophilic high-rate wastewater treatment process
嗜冷高效率废水处理工艺的建立
  • 批准号:
    20K04763
  • 财政年份:
    2020
  • 资助金额:
    $ 3.78万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of reduction in alkalinity through distributed feeding in mesophilic and thermophilic UASB reactor treating acid wastewater
开发处理酸性废水的中温和高温UASB反应器中分布式进料降低碱度的方法
  • 批准号:
    22760410
  • 财政年份:
    2010
  • 资助金额:
    $ 3.78万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Establishment of reduction in alkali supply through distributed feeding in lab-scale UASB reactor treating acid wastewater
在处理酸性废水的实验室规模UASB反应器中通过分布式进料建立减少碱供应的方法
  • 批准号:
    20860088
  • 财政年份:
    2008
  • 资助金额:
    $ 3.78万
  • 项目类别:
    Grant-in-Aid for Young Scientists (Start-up)
Nondestructive characterization of residual strain in large-diameter semiconductor crystal ingot using three-dimensional infrared photoelastic CT method
三维红外光弹CT法无损表征大直径半导体晶锭残余应变
  • 批准号:
    13555004
  • 财政年份:
    2001
  • 资助金额:
    $ 3.78万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study on Laser-Crystallization Process of Semiconductors
半导体激光晶化工艺研究
  • 批准号:
    01550015
  • 财政年份:
    1989
  • 资助金额:
    $ 3.78万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
Study on Laser Crystallization Process in Semiconductor
半导体激光晶化工艺研究
  • 批准号:
    61550016
  • 财政年份:
    1986
  • 资助金额:
    $ 3.78万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

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使用超声波和电磁波对建筑材料进行无损表征
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