Study on Laser-Crystallization Process of Semiconductors

半导体激光晶化工艺研究

• 批准号: 01550015
• 负责人: YAMADA Masayoshi
• 金额: $ 1.22万
• 依托单位: Kyoto Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550015/
• 关键词: Laser crtstallization; Laser annealing; Silicon; Analysis of heat; SOI; Melting; 溶融; 三次元集積回路

1. By using a recursive manner and Green's function solutions derived in a semi-infinite multilayer structure, a nonlinear heat equation including temperature-dependent thermal conductivity and diffusivity and fusion energy for melting has been able to be solved numerically.2. A two-dimensional boundary element method has been developed to solve in a complex composite material. In order to improve the numerical calculation accuracy at a corner, several methods were tried. A newly-developed mid-node method is found to give a good accuracy and an easiness in programming and dividing into elements.3. Thin silicon film during its melting by irradiation of a focused cw argon ion laser beam has been directly observed by using an optical microscope. As the power of laser beam is increased, a mixture region where the solid and liquid coexist appears and then a uniform molten pool is formed in the middle of the mixture region. It is demonstrated that this situation is strongly influenced by the mode and power of laser beam that is, the laser intensity profile. TEM00 mode is suitable to recrystallize SOI of good crystalline quality.4. A high-speed laser direct-drawing system has been constructed by using a galvanometer. This system was able to generate a pseudo-line beam. A trapezoid waveform is found to be good in generating the pseudo-line beam.

1.采用递推方法，通过推导半无限多层结构中的绿色函数解，数值求解了包含导热系数、扩散系数和熔化能随温度变化的非线性热方程.本文提出了一种二维边界元法来求解复杂复合材料的弹性问题。为了提高拐角处的数值计算精度，尝试了几种方法。提出了一种新的计算精度高、易于编程和单元划分的中点法.用光学显微镜直接观察了连续氩离子聚焦激光辐照硅薄膜熔化过程。随着激光功率的增大，熔池中出现了固液混合区，在混合区的中部形成了均匀的熔池。结果表明，这种情况是强烈影响的模式和功率的激光束，即激光强度分布。TEM 00模式适合于SOI的再结晶，且结晶质量较好.利用振镜构成了一套高速激光直拉系统。该系统能够产生伪线波束。梯形波形被发现是良好的产生伪线束。

项目成果

山田 正良: "レ-ザ溶融・再結晶化の空間的不均一性" 第37回応用物理学関係連合講演会講演予稿集. 29P-ZF5/II (1990)

Masayoshi Yamada：“激光熔化和再结晶中的空间异质性”第 37 届应用物理学联合会议论文集 29P-ZF5/II (1990)。

Mesayoshi Yamada: "In Situ Observation of CW-Laser Melting of Thin Silicon Films" Japanese Journal of Applied Physics. (1991)

Mesayoshi Yamada：“连续激光熔化硅薄膜的原位观察”日本应用物理学杂志。

Masayoshi Yamada: "Spacial Instabilities of Laser Melting and Recrystallization" The 37th meeting of applied physics and related field. 29P-ZF5/II. (1990)

Masayoshi Yamada：“激光熔化和再结晶的空间不稳定性”应用物理及相关领域第37次会议。

Masayoshi Yamada: "Temperature Distributions Produced in Multilayer Structures by a Scanning CW Laser Beam" Japanese Journal of Applied Physics. (1991)

Masayoshi Yamada：“扫描连续激光束在多层结构中产生的温度分布”日本应用物理学杂志。

山田正良: "レ-ザ溶融・再結晶化の空間的不均一性" 第37回応用物理学関係連合講演会講演予稿集. 29P-ZF5/II (1990)

Masayoshi Yamada：“激光熔化和再结晶的空间异质性”第 37 届应用物理学会会议记录 29P-ZF5/II (1990)。