Nondestructive characterization of residual strain in large-diameter semiconductor crystal ingot using three-dimensional infrared photoelastic CT method

三维红外光弹CT法无损表征大直径半导体晶锭残余应变

• 批准号: 13555004
• 负责人: YAMADA Masayoshi
• 金额: $ 8.32万
• 依托单位: KYOTO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555004/
• 关键词: semiconductor; infrared photoelasticity; non-destroying characterization; residual strain

The purpose of this work is to develop a new technique by which there e-dimensional distribution of residual strain in large-diameter semiconductor crystal ingots such as silicon and GaAs can be characterized nondestructively as standard ingot form and then for it to be intended for practical use. To do so, we have developed a three-dimensional infrared photoelastic CT equipment, in which a linearly-polarized light beam is introduced both along to the z-axis into a cylindrical semiconductor crystal ingot and the polarization of the transmitted light beam is analyzed, and then pratically characterized the residual strain in LEC-grown GaAs single crystal ingots, FZ-grown dislocation-free Si single crystal ingots, and CZ-grown Si single crystal ingots.It was difficult for us to make the infrared photoelastic measurement in as-grown LEC-GaAs ingots, because there were many concave or convex ditches on their cylindrical surface. However, we have designed a new technique by which we can make … More the photoelastic measurement in cylindrically-grinded ingots under the condition of rough surfaces, not polished mirror surfaces. With this new technique, we become able to characterize pseudo-three-dimensional distribution of residual strain in LEC-GaAs single crystal ingots. On the other hand, it was possible for us to make the infrared photoelstic measurement in dislocation-free FZ-Si single crystal ingots. It was found that the birefringence induced due to optical anisotropy was dominated over that photoelastically induced by residual strain, since the residual strain was extremely small in the FZ-Si ingots. Although the optical anisotropy was also dominated in CZ-grown Si ingots, we have demonstrated that the residual-strain-induced birefringence can be measu.Red by introducing the probing infrared light beam along the [100] crystallographic directions. According to our work, the infrared photoelastic technique developed here is very useful in investigating dislocations in large-diameter Si single crystals. Less

本工作的目的是发展一种新的技术，通过这种技术，可以无损地表征大直径半导体晶锭（如硅和GaAs）中残余应变的三维分布，作为标准晶锭形式，然后将其用于实际应用。为此，我们研制了一套三维红外光弹CT装置，在该装置中，将一束线偏振光沿沿着z轴引入圆柱形半导体单晶锭中，分析透射光束的偏振性，然后实际表征LEC生长GaAs单晶锭、FZ生长无位错Si单晶锭本文对直拉法生长的LEC-GaAs单晶锭进行了红外光弹测量，由于单晶锭的圆柱表面有许多凹凸不平的沟槽，给我们的测量带来了困难。不过，我们发明了一种新技术 ...更多信息 在粗糙表面而非抛光镜面条件下，对圆柱形磨削的铸锭进行光弹性测量。利用这种新技术，我们能够表征LEC GaAs单晶锭中残余应变的伪三维分布。另一方面，我们也为在无位错的FZ-Si单晶锭中进行红外光弹测量提供了可能。结果表明，由于FZ-Si锭中的残余应变非常小，因此由光学各向异性引起的双折射比由残余应变引起的光弹双折射占主导地位。虽然直拉硅锭的光学各向异性也占主导地位，但我们已经证明，通过沿着[100]晶向引入探测红外光束，可以测量残余应变引起的双折射。根据我们的工作，红外光弹技术在研究大直径硅单晶位错方面是非常有用的。少

项目成果

Techs, M.Yamada, J.Donecker, M.Rossberg, V.Alex, H.Riemann: "Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals"Materials Science and Engineering. B91-92. 174-177 (2002)

Techs、M.Yamada、J.Donecker、M.Rossberg、V.Alex、H.Riemann：“无位错硅单晶中的光学各向异性和应变诱导双折射”材料科学与工程。

M.Yamada, T.Chu: "Inspection of residual strain in Gas single crystal as standard ingot form"Proceedings of 2002 12^<th> International Conference on Semiconducting and Insulating Materials. IEEE Catalog No.02CH37343. 19-22 (2002)

M.Yamada、T.Chu：“标准铸锭形式的气体单晶中残余应变的检查”2002 年第 12 届国际半导体和绝缘材料会议论文集。

M.Yamada, T.Chu: "Inspection of residual strain in GaAs single crystal as standard ingot form"XIIth Semiconducting and Insulating Materials Conference (SIMC-XII-2002) IEEE EDS Conference Proceedings. (In press). (2003)

M.Yamada、T.Chu：“作为标准铸锭形式的 GaAs 单晶中的残余应变的检查”第 XII 届半导体和绝缘材料会议 (SIMC-XII-2002) IEEE EDS 会议论文集。

儲涛, 頭井直樹, 山田正良: "CZ-Si結晶インゴット内部歪みの非破壊評価"第50回応用物理学関係連合講演会講演予稿集. No.1(In press). (2003)

Yutao、Naoki Katsui、Masayoshi Yamada：“CZ-Si 晶锭内应变的无损评估”第 50 届应用物理学会会议记录第 1 期（出版中）。

M.Yamada, N.Zui, T.Chu: "Defect-induced birefringence in crystalline silicon ingots"European Physical Journal Applied Physics. (in press). (2004)

M.Yamada、N.Zui、T.Chu：“晶体硅锭中缺陷引起的双折射”欧洲物理杂志应用物理学。