Study on Laser Crystallization Process in Semiconductor
半导体激光晶化工艺研究
基本信息
- 批准号:61550016
- 负责人:
- 金额:$ 1.34万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (C)
- 财政年份:1986
- 资助国家:日本
- 起止时间:1986 至 1987
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
1) A numerical calculation algorism has been developped to solve the nonlinear heat equation including the temperature dependences of optical constant, themal conductivity and diffusivity, based on the linear solution of heat equation in a semi-infinite multilayer structure.2) An effective temperature, denoting the absorption rate of latent heat, has been intriduced to include the latent heat on phase transition between solid and liquid to the nonlinear numerical calculation algorism. If the effective temperature is between 1412゜C and 2857゜C, it means a partial melting. If it is above 2857゜C, then it means a melting.3) The numerical calculation results have been compared with the experimental results on melting width in Si/SiO_2/Si. It is found that the melting occurs effectively at the effective temperature of 2100゜C corresponding to the absorption of half a latent heat.4) By using a microscopic infrared camera, the radiation images have been observed to distinguish the boundaries between solid and liquid and recorded by VTR.5) A digital image input/output instrument has been made to process the images recorded by the VTR. It is found that there are mixtures of solid and liquid and that the part of solid is the nucleation center of crystallization.6) It is found that the mixtures of solid and liquid are strongly influenced by the intensity distribution of irradiating laser; that is, the temperature distribution. At the present moment, it is not clear what dominates over the physical mechanism on mixtures of solid and liquid. On this problem further investigation is needed.
1)在半无限多层结构热方程线性解的基础上,建立了求解包含光学常数、热导率和扩散率温度依赖关系的非线性热方程的数值计算算法。2)有效温度,表示潜热的吸收率,将固液相变潜热引入非线性数值计算算法。如果有效温度在1412 ° C和2857 ° C之间,这意味着部分熔化。3)对Si/SiO_2/Si的熔化宽度进行了数值计算,并与实验结果进行了比较。实验结果表明,在2100 ℃的有效温度下,熔化是有效的,对应于半个潜热的吸收。4)利用显微红外摄像机,观察了固体和液体之间的辐射图像,并用录像机记录。发现存在固体和液体的混合物,并且固体部分是结晶的成核中心。6)发现固体和液体的混合物受到照射激光的强度分布(即温度分布)的强烈影响。目前,还不清楚是什么主导了固体和液体混合物的物理机制。关于这个问题还需要进一步研究。
项目成果
期刊论文数量(7)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Masayoshi Yamada: "Temperature Distribution Produced in Multilayer Structures by a Scanning CW Elliptical Laser Beam" Japanese Journal of Applied Physics.
Masayoshi Yamada:“扫描连续椭圆激光束在多层结构中产生的温度分布”日本应用物理学杂志。
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- 影响因子:0
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- 通讯作者:
Masayoshi Yamada: "Microscope Observation of Laser Melting of Thin Silicon Film" Japanese Journal of Applied Physics.
Masayoshi Yamada:“硅薄膜激光熔化的显微镜观察”日本应用物理学杂志。
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- 影响因子:0
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- 通讯作者:
山田正良: 第47回応用物理学会学術講演会講演予稿集. 27P-N-7 (1986)
Masayoshi Yamada:日本应用物理学会第 47 届年会论文集 27P-N-7 (1986)。
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- 影响因子:0
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Masayoshi Yamada: "Optical Observation of Laser Melting of SOS" Extended Abstracts(The 47th Autumn Meeting, 1976); The Japan Society of Applied Physics. 27P-N-7 (1986)
Masayoshi Yamada:“SOS激光熔化的光学观察”扩展摘要(第47届秋季会议,1976年);
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YAMADA Masayoshi其他文献
YAMADA Masayoshi的其他文献
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{{ truncateString('YAMADA Masayoshi', 18)}}的其他基金
Establishment of psychrophilic high-rate wastewater treatment process
嗜冷高效率废水处理工艺的建立
- 批准号:
20K04763 - 财政年份:2020
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of reduction in alkalinity through distributed feeding in mesophilic and thermophilic UASB reactor treating acid wastewater
开发处理酸性废水的中温和高温UASB反应器中分布式进料降低碱度的方法
- 批准号:
22760410 - 财政年份:2010
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for Young Scientists (B)
Establishment of reduction in alkali supply through distributed feeding in lab-scale UASB reactor treating acid wastewater
在处理酸性废水的实验室规模UASB反应器中通过分布式进料建立减少碱供应的方法
- 批准号:
20860088 - 财政年份:2008
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for Young Scientists (Start-up)
Nondestructive characterization of residual strain in large-diameter semiconductor crystal ingot using three-dimensional infrared photoelastic CT method
三维红外光弹CT法无损表征大直径半导体晶锭残余应变
- 批准号:
13555004 - 财政年份:2001
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Studies on optical nondestructive detection methods of small crystal defects in the next generation of silicon wafers
下一代硅片微小晶体缺陷光学无损检测方法研究
- 批准号:
10450008 - 财政年份:1998
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study on Laser-Crystallization Process of Semiconductors
半导体激光晶化工艺研究
- 批准号:
01550015 - 财政年份:1989
- 资助金额:
$ 1.34万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)