Valence band control of ZnO and fabrication of p-n junction for light emitting device

ZnO的价带控制及发光器件p-n结的制备

• 批准号: 11450007
• 负责人: KAWASAKI Masashi
• 金额: $ 9.66万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450007/
• 关键词: ZnO Thin film; Epitaxial growth; Laser MBE; Lattice-matche substrate; ZnO superlattice; Exciton liminescence; Exciton stimulated emission; p-type ZnO; 酸化亜鉛; 室温励起子紫外光レーザー発振; 価電子制御; p-n接合; 残留ドナー濃度; ScA1MgO_4; 電流注入; パルスレーザー堆積法

Epitaxial growth of ZnO thin film on atomically flat sapphire (0001) substrate was achieved by using laser MBE, in addition, control of in-plane orientation and surface polarity were done [I.Ohkubo et al., Surf. Sci. Lett. 443, L1043 (1999)]. High grade ZnO/MgZnO superlattice was made, whose quality was comparable to that of compound semiconductors, and the blue-shift of energy gap due to the quantum effect was observed [A.Ohtomo et al., Appl. Phys. Lett, 75, 980 (1999) ; 75, 4088 (1999)]. Generally, valence band control needs high quality of thin film, we tried to made higher quality thin film, by using ScAlMgO4 substrate, lattice matching of which with ZnO was very good. As a result, very high quality ZnO thin film comparable to single crystal was made [A.Ohtomo et al., Appl. Phys. Lett. 75, 2635 (1999)]. The exciton luminescence properties was increased [T.Makino et al., Appl. Phys. Lett. 76, 3549 (2000)], Also, the room temperature exciton luminescences of high quality ZnO/MgZnO and CdZnO/MgZnO superlattices were observed [T.Makino et at., Appl. Phys. Lett. 77, 975 (2000) ; 77, 1632 (2000) ; H.D.Sun et al., Appl. Phys. Lett. 77, 4250 (2000)]. Further, ZnO/MgZnO superlattice generated stimulated emission of exciton at room temperature [A.Ohtomo et al., Appl. Phys. Lett. 77, 2204 (2000)]. Fabrication of p-type ZnO has not been done, but band engineering of ZnO thin film was greatly developed.

利用激光分子束外延技术在原子扁平的蓝宝石(0001)衬底上外延生长了氧化锌薄膜，并实现了面内取向和表面极性的控制[I.Ohkubo等人，Surf.SCI。让我们来吧。443、L1043(1999)]。制备了质量与化合物半导体相当的高品位的氧化锌/镁氧化锌超晶格，观察到由于量子效应引起的能隙蓝移[A.Ohtomo等，Appl.太棒了。莱特，75,980(1999)；75,4088(1999)]。一般来说，价带控制对薄膜的质量要求很高，我们尝试用ScAlMgO4衬底来制备更高质量的薄膜，这种衬底与氧化锌的晶格匹配性很好。结果，得到了与单晶相当的高质量的氧化锌薄膜[A.Ohtomo等人，App.太棒了。让我们来吧。75,2635(1999)]。激子发光特性被提高[T.Makino等，Appl.太棒了。让我们来吧。76,3549(2000)]，还观察到了高质量的ZnO/镁和镉锌/镁锌超晶格的室温激子发光[T.Makino et at.太棒了。让我们来吧。77,975(2000)；77,1632(2000)；H.D.Sun等人，App.太棒了。让我们来吧。77,4250(2000)]。此外，氧化锌/镁氧化锌超晶格在室温下产生了激子的受激发射[A.Ohtomo等，Appl.太棒了。让我们来吧。77,2204(2000)]。P型氧化锌的制备还没有完成，但氧化锌薄膜的能带工程有了很大的发展。

项目成果

Y.Matsumoto et. al.: "Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide"Science. 291. 854-856 (2001)

Y.松本等。

T.Makino et. al.: "Exciton spectra of ZnO thin film on lattice-matched substrates grown with laser MBE method"Appl.Phys.Lett.. 76. 3549-3551 (2000)

T.牧野等。

A.Ohtomo et. al.: "Room-temperature simulated-emission of exciton in ZnO/(Mg,Zn)O superlattices"Appl.Phys.Lett.. 77. 2204-2206 (2000)

A.Ohtomo 等。

田村謙太郎 et. al.: "酸化亜鉛紫外レーザー"マテリアルインテグレーション. 12[12]. 9-14 (1999)

Kentaro Tamura 等人：“氧化锌紫外激光”材料集成 12[12]。

A.Ohtomo: "Epitaxial growth of single-crystalline ZnO films towards novel transparent opt-electronics"Proc. of the 3rd Symp. on Atomic Scale Surface and Interface Dynamics. 3. 147-150 (1999)

A.Ohtomo：“单晶 ZnO 薄膜外延生长以实现新型透明光电子学”Proc。