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DEVELOPMENT OF GATED TRANSITION METAL NITRIDE FIELD EMITTER ARRAYS

门控过渡金属氮化物场发射极阵列的开发

基本信息

批准号：
11555006
负责人：
GOTOH Yasuhito
金额：
$ 2.3万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555006/
关键词：
niobium nitride thin films field emitter array gate electrode ion beam assisted deposition transfer mold technique etching back method electron emission property emission pattern 高真空イオンビームアシスト蒸着テトラメチルアンモニウムヒドロキシド水酸化カリウム

项目摘要

We have developed a gated niobium nitride field emitter arrays. The fabrication process can be divided into two major processes : fabrication of emitter covered with niobium nitride and fabrication of gate electrode. We adopted the transfer mold technique to fabricate niobium nitride emitter, by which we can fabricate the emitter apex uniformly. A set of 26 circles were transferred to silicon substrate of which surface had been oxidized. Formation of the mold was performed by anisotropic etching with tetramethylammoniumhydroxide. Oxidation of the mold provide an insulating layer between emitter and gate, which was attached by the following process. After removal of silicon mold, we deposited molybdenum gate electrode onto the insulating layer. Gate aperture was formed by etching back method. The fabricated device was installed into a vacuum chamber and was evaluated its electron emission performance in high vacuum. The driving voltage was 14V at the first stage and after occasional discharges, it increased to 20V.Emission was stable except discharges. Emission pattern was observed and we found some portion of the emitted electrons was incident on the gate electrode. Optimizing the fabrication process, we expect further improved emission property.

我们开发了门控氮化铌场发射器阵列。制造工艺可分为两个主要工艺：氮化铌覆盖发射极的制造和栅电极的制造。我们采用传递模技术来制造氮化铌发射极，通过该技术可以均匀地制造发射极尖端。将一组 26 个圆圈转移到表面已被氧化的硅基板上。模具的形成通过使用四甲基氢氧化铵的各向异性蚀刻来进行。模具的氧化在发射极和栅极之间提供了绝缘层，该绝缘层通过以下工艺连接。去除硅模具后，我们将钼栅电极沉积到绝缘层上。栅极孔径通过回蚀方法形成。将制造的器件安装到真空室中并评估其在高真空下的电子发射性能。第一阶段驱动电压为14V，偶尔放电后增加至20V。除放电外，发射稳定。观察发射图案，我们发现发射电子的一部分入射到栅电极上。通过优化制造工艺，我们期望进一步提高排放性能。