Effect of Grain Boundary/Interface Network on Damaging Mechanism due to Atom Migration Induced by Electric Current and Stress in an LSI Conductor

晶界/界面网络对LSI导体中电流和应力引起的原子迁移损伤机制的影响

• 批准号: 11555031
• 负责人: KITAMURA Takayuki
• 金额: $ 3.46万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555031/
• 关键词: Migration; Network; LSI conductor; Fracture mechanism; Electric current; Stress; Grain boundary; Interface; 多結晶配線

The electric current induces atom transport in an LSI conductor and the "electromigration (EM)" along grain boundary/interface (GB/IF) often brings about a cavity. Since the EM, of which flux is proportional to the electric current density, does not satisfy the law of mass conservation, stress is generated along the GB/IF.In other words, the migration due to the stress, "stress migration (SM)", compensates the mass conservation. Thus, the atoms flow not only by the EM but also by the SM under the condition without external loading. In this study, the functional of atom flux due to the EM/SM is derived and a numerical simulation method of migration along a GB/IF network is proposed. The mechanism of cavity growth in a polycrystalline LSI conductor under an electrical current is investigated on the basis of numerical simulation. The SM transports the atoms into the GB through the cavity tip and they are moved away by the EM.The cavity growth rate is strongly influenced by the IF/GB network.

电流在LSI导体中引起原子输运，沿沿着晶界/界面（GB/IF）的“电迁移（EM）”常常导致空穴。由于其通量与电流密度成比例的EM不满足质量守恒定律，因此沿着GB/IF产生应力。换句话说，由于应力引起的迁移，“应力迁移（SM）"，补偿了质量守恒。因此，在没有外部负载的情况下，原子不仅通过EM流动，而且还通过SM流动。本文推导了电磁/同步辐射引起的原子通量泛函，提出了一种沿沿着GB/IF网络迁移的数值模拟方法。本文用数值模拟的方法研究了电流作用下多晶LSI导体中空穴的生长机理。SM通过腔尖将原子输运到GB中，并且它们被EM移开。IF/GB网络强烈地影响腔生长速率。

项目成果

Takayuki Kitamura: "Atom Migration Induced by Electric Current and Stress in a Polycrystalline LSI Conductor"Transaction of JSME Ser.A. Vol.67, No.653. 108-113 (2001)

Takayuki Kitamura：“多晶LSI导体中电流和应力引起的原子迁移”JSME Ser.A的交易。

Takayuki Kitamura: "Effect of Grain Boundary/Interface Network on Fracture Due to Atom Migration Induced by Stress in an LSI Conductor"Transaction of JSME Ser.A. Vol.65, No.640. 2497-2503 (1999)

Takayuki Kitamura：“晶界/界面网络对 LSI 导体中应力引起的原子迁移断裂的影响”JSME Ser.A 交易。

T.Kitamura: "Cavity Growth Induced by Electric Current and Stress in LSI Conductor"Creep in Structure. 5. 105-114 (2001)

T.Kitamura：“LSI 导体中电流和应力引起的空腔生长”结构蠕变。

川村太,北村隆行 ほか: "LSI配線の電流と応力の相互作用下における原子マイグレーション破壊に及ぼす粒界ネットワークの影響"日本機械学会講演論文集. 99-16. 91-92 (1999)

Futoshi Kawamura、Takayuki Kitamura 等人：“LSI 布线中电流和应力相互作用下晶界网络对原子迁移断裂的影响”，日本机械工程师学会论文集 99-16 (1999)。

北村隆行: "LSI配線のストレスマイグレーション破壊に及ぼす粒界/界面ネットワークの影響"日本機械学会論文集,A編. 65. 2497-2503 (1999)

Takayuki Kitamura：“晶界/界面网络对 LSI 互连应力迁移失效的影响”，日本机械工程师学会汇刊，A 版，65. 2497-2503 (1999)。