Fracture mechanism of LSI conductor due to atom migration induced by electri current and stress

电流和应力诱导原子迁移导致LSI导体断裂机制

• 批准号: 09450049
• 负责人: KITAMURA Takayuki
• 金额: $ 5.95万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450049/
• 关键词: LSI conductor; Atom migration; Electric current; Stress; Cavity; Numerical simulation; Polycrystalline; FEM; エレクトロマイグレーション; ストレスマイグレーション; 破壊機構; 拡散; 信頼性

It is well known that, atoms are transported by thermal stress as well as electric current in an LSI conductor. The interacted migration brings about cavities and the failure of conductor takes place by their growth. The results obtained from this study is summarized as follows. (1) An FEM of diffusion along grain boundaries is developed in order to analyze the cavity growth under the stress-induced migration. The simulation reveals that the diffusion along the interface between the conductor and the insulator strongly affects the atom flow and change the growth rate of cavity. (2) The movement of cavity is analyzed on the basis of atom migration along the surface due to electric current. (3) The analyzing method of cavity growth under interacted migration is discussed on the basis of the results (I) and (2). The method is implanted to the advanced FEM (1), which allows us to analyze the cavity growth in a polycrystalline conductor under the interaction. (4) The cavity grows little under migration induced by only electric current. However, it brings about the stress distribution along the grain boundaries near the cavity and the cavity growth is governed by the atom migration due to the stress gradient.

众所周知，在大规模集成电路导体中，原子不仅受到电流的作用，而且还受到热应力的作用。相互作用的迁移导致空洞的产生，空洞的长大导致导体的失效。本研究获得的结果总结如下。(1)为了分析应力诱导迁移下空洞的生长，建立了沿着晶界扩散的有限元模型。模拟结果表明，沿导体-绝缘体界面的扩散沿着强烈地影响了原子的流动，改变了腔的生长速率。(2)从电流作用下原子沿表面沿着迁移的角度分析了腔的运动。(3)在上述结果的基础上，讨论了在相互作用下空穴增长的分析方法。该方法被移植到先进的有限元（1）中，使我们能够分析相互作用下多晶导体中的空穴生长。(4)在纯电流作用下，空穴的生长很小。但在空洞附近的晶界上产生了沿着的应力分布，空洞的生长受应力梯度引起的原子迁移控制。

项目成果

Takayuki Kitamura et al.: "Numerical Analysis on Growth of Grain Boundary Cavity under Lattice Diffusion Creep" Trans.JSME,Ser.A. 64-618. 373-378 (1998)

Takayuki Kitamura等：“晶格扩散蠕变下晶界空腔生长的数值分析” Trans.JSME,Ser.A.

Takayuki Kitamura: "Molecular Dynamics Simulation on Grain Boundary Diffusion in Aluminum under Hydrostatic Stress" JSME International Journal. 41-1. 10-15 (1998)

Takayuki Kitamura：“静水应力下铝晶界扩散的分子动力学模拟”JSME 国际期刊。

Tadahiro Shibutani, Takayuki Kitamura et.al: "Fracture of LSI conductor with Grain Boundary Network under Migration Induced by Electric Current and Stress" Preprint of 4^<th> National Symposium on Atom Migration in LSI Conductor. 33-34 (1998)

Tadahiro Shibutani、Takayuki Kitamura 等人：“电流和应力引起的迁移下具有晶界网络的 LSI 导体断裂”第四届全国 LSI 导体原子迁移研讨会预印本。

Tadahiro Shibutani, Takayuki Kitamura et al.: "Creep Cavity Growth under Interaction between Lattice Diffusion and Grain Boundary Diffusion" Metallurgical and Materials Transaction. 29A. 2533-2542 (1998)

Tadahiro Shibutani、Takayuki Kitamura 等人：“晶格扩散与晶界扩散相互作用下的蠕变空腔生长”冶金与材料学报。

北村隆行: "体拡散クリープ下の粒界キャビティ成長の数値解析" 日本機械学会論文集. 64-618. 373-378 (1998)

Takayuki Kitamura：“体扩散蠕变下晶界空腔生长的数值分析”，日本机械工程师学会汇刊 64-618 (1998)。