Analysis on Via-hole Filling Rrocess in Multilayred LSI Interconnection

多层LSI互连中的过孔填充工艺分析

• 批准号: 07650100
• 负责人: KITAMURA Takayuki
• 金额: $ 1.73万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650100/
• 关键词: LSI; Multilayred interconnection; Via-hole; Filling process; Surface diffusion; Numerical simulation; Reflow; Dellevence Method

As recent advances on LSI (large scale integrated circuit) technology requires further reduction of the size, multilayred structure has been intensely investigated. The forming process of interconnection between the layrs is one of the key issues in order to accomplish the structure. The reflow, in which the via-hole is filled with the conductor metal by the surface diffusion, is a promising method though the detail in the process has not been clarified yet. In this study, the process is numerically simulated for a two-dimensional model (filling into a groove) and an axi-symmetrical one (filling into a circular cylinder) solving the differential equation of surface diffusion by a finite dellevence method. The results show that the perfect filling can not be achieved for the groove or the cylinder with the aspect ratio, (depth/half width) or (depth/radius), larger than 3. Feasible conditions for the perfect filling are illustrated in a map for reader's convenience. The time for the filling, which is strongly dependent on the size and aspect ratio of via-hole, is discussed. Moreover, the process in incomplete filling is analyzed and the modified shape of via-hole is proposed on the basis of the simulation. The diffusion process is simurated in atomic level in detail using molecular dynamics under constant tempelature.

随着大规模集成电路（LSI）技术的进步，要求进一步缩小尺寸，多层结构已经得到了热烈的研究。层间互连的形成过程是实现该结构的关键问题之一。通过表面扩散将导体金属填满过孔的回流法是一种很有前途的方法，但具体过程尚未明确。本文采用有限差分法求解表面扩散微分方程，分别对二维模型（充入槽内）和轴对称模型（充入圆柱内）进行了数值模拟。结果表明，当长径比（深度/半宽）或（深度/半径）大于3时，沟槽或圆柱体均无法实现完美填充。为方便读者，在地图上说明了完美充填的可行条件。讨论了充填时间与通孔尺寸和纵横比密切相关的问题。分析了不完全充填过程，并在此基础上提出了改进的过孔形状。采用分子动力学方法，在恒温条件下，在原子水平上详细模拟了扩散过程。

项目成果

北村隆行: "静水圧下のアルミニウム粒界拡散の分子動力学シミュレーション" 日本機械学会論文集,A編. 62・604. 2791-2796 (1996)

Takayuki Kitamura：“静水压力下铝晶界扩散的分子动力学模拟”，日本机械工程学会会刊，A 版 2791-2796（1996 年）。

Takayuki Kitamura: "Numerical Analvsis on Via-hole Filling Process in Multilayered LSI Interconnection" Experimental/Numerical Mechanics in Electronic Packaging. 17-18 (1996)

Takayuki Kitamura：“多层LSI互连中通孔填充过程的数值分析”电子封装中的实验/数值力学。

北村隆行: "LSI多層配線ビア孔リフロープロセス解析" 日本機械学会講演論文集. 95-2. 269-270 (1995)

Takayuki Kitamura：“LSI 多层布线通孔回流工艺分析”日本机械工程师学会会议记录 95-270 (1995)。

Takayuki Kitamura: "Numerical Analysis on Via-hole Filling Process in Multilayered LSI Interconnection" Experimental/Numerical Mechanics in Electronic Packaging. 17-18 (1996)

Takayuki Kitamura：“多层LSI互连中通孔填充过程的数值分析”电子封装中的实验/数值力学。

北村隆行: "静水圧下のアルミ粒界拡散の分子動力学シミュレーション" 日本機械学会講演論文集. 95-10. 160-161 (1995)

Takayuki Kitamura：“静水压力下铝晶界扩散的分子动力学模拟”日本机械工程师学会会议记录 95-10（1995）。