Control of electron transitions in nano structures and development of near-and mid-infrared optical modulator devices

纳米结构中电子跃迁的控制及近红外和中红外光调制器器件的开发

• 批准号: 11555091
• 负责人: SASAKI Hiroyuki
• 金额: $ 8.06万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555091/
• 关键词: Nanostructures; quantum dots; quantum wires; quantum well films; quantum levels; optical transitions; 電子散乱; 赤外光; 量子(井戸); エネルギー準位; 中赤外光; シュタルク効果; 光イオン化; 自己形成; 単一ヘテロ構造; 伝導特性; メモリ素子; 赤外検出器; ボロメータ; 光学フォノン

We have explored ways to control optical transitions and carrier scatterings associated with electronic levels and subbands in 10nm-scale quantum wells, quantum wires and quantum dots.We investigated possibilities of using these processes for optical modulator devices.With respect to quantum dots (QDs), we have studied (1) the electric-field induced (Stark) shift of absorption spectrum of stacked QDs, (2) the THz-induced modulation of photoluminessence from strain-induced quantum dots, caused by the redistribution of carriers in this system, and (3) the scattering mechanisms of electrons by charged and neutral QDs placed near the hetero-FET channel. With regards to quantum wires (QWRs), we have clarified (4) anisotropies both in conductivities and polarization dependent optical properties of step QWR structures on vicinal GaAs (111) plane, and (5) the origin of polarization dependent luminescence spectra from ridge QWR structures, caused by the slight asymmetries in the cross-sectional shape of wires. In relation to the intersubband absorption spectra of quantum wells (QWs), we have clarified (6) the origins of gate-voltage dependent absorption spectra, (7) effects of interface roughness on intersubband optical spectra over the wide range of temperatures, and (8) a new bolometric infrared detector scheme, where an n-type QW stack is used as the infrared absorber and a p-type QW is used as the sensor for temperature rise.

我们探索了在10 nm尺度量子威尔斯、量子线和量子点中控制与电子能级和子带相关的光跃迁和载流子散射的方法，研究了将这些过程应用于光调制器器件的可能性.对于量子点，我们研究了（1）电场诱导量子点堆叠吸收光谱的斯塔克（Stark）位移，（2）太赫兹对应变量子点光致发光的调制，这是由系统中载流子的重新分布引起的;（3）异质FET沟道附近的带电和中性量子点对电子的散射机制。对于量子线，我们阐明了（4）GaAs（111）邻面台阶QWR结构的电导和偏振相关光学性质的各向异性;（5）脊状QWR结构偏振相关发光光谱的起源，这是由于量子线横截面形状的轻微不对称引起的。关于量子威尔斯（QW）的子带间吸收谱，我们阐明了（6）依赖于栅电压的吸收谱的起源，（7）在宽温度范围内界面粗糙度对子带间光谱的影响，（8）一种新的测热红外探测器方案。其中n型QW叠层用作红外吸收体，p型QW用作温度升高的传感器。

项目成果

O. Yusa, S.J. Allen, J. Kono, H. Sakaki, J. Ahopelto, H. Lipsanen, M. Sopanen, and J. Tulkki: "THx-near infrared upconversion in strain-induced quantum dots"Proc. of 24th Int. Conf. on the Physics of Semiconductor. 1183-84 (1999)

O.尤萨，S.J.

Ph.Lelong, K.Suzuki, G.Bastard, H.Sakaki, Y.Arakawa: "Enhancement of the Coulomb correlations in type-II quantum dots"Physica E. 7. 393-397 (2000)

Ph.Lelong、K.Suzuki、G.Bastard、H.Sakaki、Y.Arakawa：“II 型量子点中库仑相关性的增强”Physica E. 7. 393-397 (2000)

H. Sakaki: "Control of electronic states in epitaxially synthesized quantum dot and wire structures and their potentials as new electronics and photonics materials"Phys. Stat. Sol. (b). 215. 291-296 (1999)

H. Sakaki：“外延合成量子点和线结构中电子态的控制及其作为新电子和光子材料的潜力”Phys。

S. Watanabe, S. Koshiba, M. Yoshita, H. Sakaki, M. Baba, and H. Akiyama: "Microscopy of electronic states contributing to lasing in ridge quantum-wire laser structure"Appl. Phys. Lett.. 75, 15. 2190-2192 (1999)

S. Watanabe、S. Koshiba、M. Yoshita、H. Sakaki、M. Baba 和 H. Akiyama：“电子态显微镜有助于脊量子线激光器结构中的激光发射”Appl。

A. Vasanelli, R. Ferreira, H. Sakaki and . Bastard: "Stark effects and electro-optical properties of strongly stacked dots"Solid State commun.. 118. 459 (2001)

A. Vasanelli、R. Ferreira、H. Sakaki 和。