Development Research of Appratus for Artificial Lattice Utilizing Sputtering and Ion-Plating Combined Technique

溅射与离子镀联合技术人工晶格装置的研制

• 批准号: 11555086
• 负责人: HATA Tomonobu
• 金额: $ 8.45万
• 依托单位: Kanazawa University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555086/
• 关键词: Sputtering; Thin Film; Metallic Mode; High-k Material; Limitted Reaction; ZrO2; MOSFET; フラッシュ蒸着法; エピキシャル成長; β-FeSi_2; 人工超格子; ヘテロエピタキシャル; フラッシュ蒸着; SiGe; イオンプレーラィレグ; ヘテロエピタキシャル成長; 反応性スパッタリング; イットリア安定化ジルコニア; S:Ge(シリコンゲルマニウム)

A new sputtering film deposition method, named Limited Reaction Sputtering Technique, was developed and investigated. Using this technique, ZrO2 dielectric films were synthsized for gate materials of next generation MOSFETs. The Si substrate surface oxidation was suppressed consequently a high specific dielectric constant as high as over 20 was obtained. On conventional sputtering technique using oxide target, oxigen ions and radicals are easily to be generated, thus Si is oxidized significantly. However, this teconique does not genarate them, resulting in clear interface between Si substrate and deposited films.

本文提出并研究了一种新的溅射成膜方法--有限反应溅射法。利用这种技术，ZrO 2介电薄膜的尺寸为下一代MOSFET的栅极材料。抑制了Si衬底表面氧化，从而获得了高达20以上的高比介电常数。在传统的溅射工艺中，氧化物靶容易产生氧离子和自由基，从而使Si被严重氧化。但是，这种技术并没有使它们产生，导致Si衬底和沉积膜之间的界面清晰。

项目成果

T.Hata K.Sasaki, Y.Ichikawa, M.Nagashima, K.sasaki: "Surface and Interface of Heteroepitally Grown Yttoria-Stabilized Zircona (YSZ) on (100), (110), (111) Si Substrates by Reactive Sputtering"Program & Abstracts. IJC-Si. PI-29 (1999)

T.Hata K.Sasaki、Y.Ichikawa、M.Nagashima、K.sasaki：“通过反应溅射在 (100)、(110)、(111) Si 基板上异质生长氧化钇稳定氧化锆 (YSZ) 的表面和界面

K.Sasaki, T.Hasu, K.Sasaki, T.Hata: "Preparation of YSZ Ultra thin Film for Gate Inslator Films by Metal/Oxide Mode"Tech. Rep. Of IEICE. CPM2000-123. 39-44 (2000)

K.Sasaki、T.Hasu、K.Sasaki、T.Hata：“通过金属/氧化物模式制备用于栅极绝缘体薄膜的 YSZ 超薄膜”技术。

K. Sasaki, T. Hata: "Reactive Growth of YSZ(ZrO2:Y2O3) Thin Films with Unpoisoned Sputtering Target"Abs. Of Joint Workshop of 29th IUVSAT. 59-62 (2000)

K. Sasaki、T. Hata：“使用无毒溅射靶材反应生长 YSZ(ZrO2:Y2O3) 薄膜”Abs。

真下,畑,小島 他: "「図解」薄膜技術"培風館. 263 (1999)

Mashita、Hata、Kojima 等：“薄膜技术图解”Baifukan 263 (1999)。

J.D.Kim,S.Kawagoe,K.Susaki and T.Hata: "Target for a Pb(Zr.Ti)O_3 Thin Film Deposited at Low Temperature Using a Quasi-Metallic Mode of Reactive Sputtering"Jpn.J.Appl.Phys. 38[12A]. 6882-6886 (1999)

J.D.Kim、S.Kawagoe、K.Susaki 和 T.Hata：“使用反应溅射的准金属模式在低温下沉积 Pb(Zr.Ti)O_3 薄膜的靶材”Jpn.J.Appl.Phys。