Study of high reslution measurement of thin-film-thermal-properties by the ultra-high sensitive PAS

超高灵敏PAS高分辨率薄膜热性能测量研究

• 批准号: 06452139
• 负责人: HATA Tomonobu
• 金额: $ 4.29万
• 依托单位: Kanazawa University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06452139/
• 关键词: PAS; Thermal Conductivity; Si; Photothermal Spectroscopy; Thermal Diffusivity; InP; Thermal conductivity; Si

Original point of our research is to evaluate thermal diffusivity of thin films deposited on the substrate. In the conventional PAS technique as the thermal diffusion length is much larger than the film thickness, it is impossible to evaluate the thermal property for the only films on the substrate. We proposed that the lateral thermal diffusion induced by the optical absorption can be detected by the tiny pyroelectric sensor.At first, we evaluated various bulk samples by the dimensional thermal propagation by the z-cut LiNbO3 pyroelectric element and found that those thermal diffusivities are Si : 0.87, Cu : 0.96, InP : 0.44, GaAs : 0.25, Ta : 0.24 [cm2/s]. Those values are within 5% difference compared with handbook data.Next, we evaluated a-1 mu m-thick Si thin film deposited on the quartz substrate. We assumed that when laser beam is irradiated on the film thermal resistance is assumed a parallel connection with the resistance of film and that of substrate. It is easy to separate those two resistances experimentally. Thus, We established how to measure the thermal diffusivity and found that the value for quartz substrate is 7.18*10^3 [cm^2/s] and that for Si thin film is 0.65 [cm^2/s].

本研究的出发点是评估沉积在基底上的薄膜的热扩散率。在传统的PAS技术中，由于热扩散长度远大于膜厚度，因此不可能评估基板上仅有的膜的热性能。首先，我们利用z切LiNbO_3热释电元件对不同的体样品进行了三维热传播测量，得到了Si：0.87，Cu：0.96，InP：0.44，GaAs：0.25，Ta：0.24 [cm ~ 2/s]。这些值与手册数据相比相差在5%以内。接下来，我们评估了沉积在石英衬底上的约1 μ m厚的Si薄膜。我们假设激光照射在薄膜上时，薄膜热阻与薄膜电阻和衬底电阻并联。通过实验很容易将这两种电阻分开。因此，我们建立了如何测量热扩散率，并发现石英衬底的值为7.18 × 10 ^3 [cm ^2/s]，Si薄膜的值为0.65 [cm ^2/s]。

项目成果

T.Hata.H.Konishi.D.Iwai and K.Sasaki: "Evaluation of Optical Apsorption Coetcieut of Si by PAS Usiug Frauspareit Pyreelectric Trausducer" Jpn.J.Appl,Phys.34(掲載予定). (1995)

T.Hata.H.Konishi.D.Iwai 和 K.Sasaki：“PAS Usiug Frauspareit Pyreelectric Trausducer 对 Si 的光学吸收系数的评估”Jpn.J.Appl，Phys.34（待出版）。

T.Hata, H.Konishi, D.Iwai, K.Sasaki: "Evaluation of Optical Absorption Coefficient of Si by Photothermal Spectroscopy Using Transparent Pyroelectric Transducer" Jpn.J.Appl.Phys.Vol.34. 2911-2916 (1995)

T.Hata、H.Konishi、D.Iwai、K.Sasaki：“使用透明热释电传感器通过光热光谱法评估 Si 的光学吸收系数”Jpn.J.Appl.Phys.Vol.34。

T.Hata,H.Konishi.D.Iwai,K.Sasaki.: "E valuation of optical Obsorption cosfficient of Si by PAS using Transparent Transclucer." Japanese.J.Appl.Physics.34. 2911-2916 (1995)

T.Hata,H.Konishi.D.Iwai,K.Sasaki.：“使用透明 Transclucer 通过 PAS 评估 Si 的光学吸收系数。”

S.Horita.H.Konishi,N,Miyabo and T.Hata: "Determination of Material Thermol Froperties Using Photoacoustic Sigrals Detected bya Trauspaneut Transducer" Jpn.J.Appl,Phys.33. 3238-3245 (1994)

S.Horita.H.Konishi,N,Miyabo 和 T.Hata：“使用 Trauspaneut 传感器检测到的光声信号测定材料热力学性能”Jpn.J.Appl，Phys.33。