Development of new method to control composition ratio of alloy film by low temperature, high rate deposition

我们提出了一种新的方法来控制合金片的组成比，通过一个改进的压缩磁场磁场散射，这个磁粒子发射源有两个磁线圈，一个是目标（Bm）后面的传统磁线圈，另一个是压缩线圈Bc，使磁场平行到目标表面。Bm和Bc可以控制目标表面上密集等离子体的空间位置。如果天主教上有不同的rargets，那就可以控制被蚀刻的区域。因此，有可能通过改变Bc和Bm来控制分离薄膜的组成比率，我们应用了这一方法来制造超晶格结构和分级薄膜，以减少热退火后Si/TiSi_x薄膜的残余压力。我们超级晶格的一层厚度是35-70，如果要在层之间找到一个清晰的轮廓，那么目标的预清理是很重要的。The halfwidth of X-ray diffracted pattern of the samples are between 0.038 and 0.068。因此，这个超晶格对减少永久性压力有很好的效果，而且电影的抵抗力不够低。那么，0.1 m的线性分级组合层在0.3 m的TiSi_2和0.5 m的硅层之间制造。它成功地存放了一部无压力的低抵抗力电影。

We proposed a new method to control a composition ratio of alloy film by a improved compressed magnetic field magnerton sputtering.This magnetron sputtering source has two magnetic coils, one is a conventional magnetron coil behind the target (Bm) and the other is a compressing coil Bc to increase magnetic field parallel to the target surface. The Bm and Bc can control the spatial position of intense plasma on the target surface. If there were different kinds of rargets on the cathode, it is psssible to control the etched area of the target. Therefore, it is possible to control the composition ratio of the sputtered films by changing the Bc and Bm.We applied this method to fabricate super-lattice structure and graded composition film to redeuce the residual stress of the Si/TiSi_x films after thermal annealing. The thickness of one layer of our super-lattice is 35-70 .In order to get a sharp profile between layers, the precleaning of the target is important. The halfwidth of X-ray diffracted patterns of the samples are between 0.038゜and 0.068゜. though this superlattice was effective to reduce the residual stress, the resistivity of the film was not low enough.Then,a 0.1 m linearly graded composition layer was fabricated between 0.3 m TiSi_2 and 0.5 m Si layers. It was succeeded to deposit a stress free low resistivity film.