Development of new method to control composition ratio of alloy film by low temperature, high rate deposition

低温高速率沉积控制合金膜成分比新方法的开发

• 批准号: 61850050
• 负责人: HATA Tomonobu
• 金额: $ 6.08万
• 依托单位: Kanazawa University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research
• 财政年份: 1986
• 资助国家: 日本
• 起止时间: 1986 至 1988
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-61850050/
• 关键词: Sputtering; Silicide; Plasma control; 傾斜機能材料; プラズマ制御; プラズマ発光分光分析; 人工格子; スパッタリング

We proposed a new method to control a composition ratio of alloy film by a improved compressed magnetic field magnerton sputtering.This magnetron sputtering source has two magnetic coils, one is a conventional magnetron coil behind the target (Bm) and the other is a compressing coil Bc to increase magnetic field parallel to the target surface. The Bm and Bc can control the spatial position of intense plasma on the target surface. If there were different kinds of rargets on the cathode, it is psssible to control the etched area of the target. Therefore, it is possible to control the composition ratio of the sputtered films by changing the Bc and Bm.We applied this method to fabricate super-lattice structure and graded composition film to redeuce the residual stress of the Si/TiSi_x films after thermal annealing. The thickness of one layer of our super-lattice is 35-70 .In order to get a sharp profile between layers, the precleaning of the target is important. The halfwidth of X-ray diffracted patterns of the samples are between 0.038゜and 0.068゜. though this superlattice was effective to reduce the residual stress, the resistivity of the film was not low enough.Then,a 0.1 m linearly graded composition layer was fabricated between 0.3 m TiSi_2 and 0.5 m Si layers. It was succeeded to deposit a stress free low resistivity film.

提出了一种改进的压缩磁场磁控溅射控制合金膜成分比的新方法，该磁控溅射源有两个磁线圈，一个是位于靶后的常规磁控线圈（Bm），另一个是用于增加平行于靶面磁场的压缩线圈（Bc）。Bm和Bc可以控制强等离子体在靶面上的空间位置。如果阴极上有不同的靶，则可以控制靶的刻蚀面积。因此，可以通过改变Bc和Bm来控制溅射薄膜的成分比，并利用这种方法制备了超晶格结构和成分梯度薄膜，以降低Si/TiSi_x薄膜热退火后的残余应力。我们的超晶格的一层厚度是35-70。为了得到层间的尖锐轮廓，靶的预清洁是重要的。样品的X射线衍射图半宽在0.038 ~ 0.068 nm之间。然后在0.3 μ m的TiSi_2和0.5 μ m的Si层之间制备了0.1 μ m的线性成分梯度层。成功地存款了无应力的低电阻率薄膜。

项目成果

Tomonobu HATA,Yukihiro KAMIDE: J.Vac.Sci.Tech.5. (1987)

Tomonobu HATA，Yukihiro KAMIDE：J.Vac.Sci.Tech.5。

T.Hata; Y.Kamide; S.Nakagawa; K.Hattori: "Characteristics of a-Si Films Prepared by CMF-magnetron Sputtering." Trans. IECE(Japan). J69-C. 1239-1247 (1986)

T.哈塔;

Hata,T.;Kamide,Y.;Hattori,K.: J.Appl.Phys.59(10). 3604-3606 (1986)

Hata，T.；Kamide，Y.；Hattori，K.：J.Appl.Phys.59(10)。

Hata,T.;Kamiya,K.;Kamide,Y.;Horita,S.: Proc.ISPC-8/1987.2. 921-926 (1987)

Hata，T.；Kamiya，K.；Kamide，Y.；Horita，S.：Proc.ISPC-8/1987.2。

T.Hata;K.Kamiya;Y.Kamide;S.Horita: Thin Solid Films. 163. 467-473 (1988)

T.Hata；K.Kamiya；Y.Kamide；S.Horita：固体薄膜。