Low Temperature Preparation of Ferroelectric (PZT) Thin Films by New Sputter Deposition Mode and Investigation of Its Mechanisms

新型溅射沉积模式低温制备铁电（PZT）薄膜及其机理研究

• 批准号: 09650349
• 负责人: HATA Tomonobu
• 金额: $ 2.5万
• 依托单位: Kanazawa University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650349/
• 关键词: Sputtering; PZT Thin Films; Metallic Mode; Oxide Mode; Isotope Oxygen; ZrTi Target; Metal-Oxide Combined Target; ZrTiターゲット; 金属-酸化物複合ターゲット; 金属・酸化物複合ターゲット

Origin of oxygens in PZT (Pb(Zr, Ti)O_3) films prepared using isotope oxygen (18O_2) was investigated by analyzing the mass of oxygens in the films by SIMS technique. For a film prepared by metallic mode it was found for the first time that 90% oxygen in the film was from PbO and the rest 10% from oxygen gas. Thus PbO is the main oxygen source. While, for oxide mode 30% oxygen came from PbO, consequently, oxygen gas was the main oxygen source.Quantitatively investigating Pb ratio to Zr+Ti in targets, it was found that perovskite films were intended to grow when the ratio was more than 3. This result is recognized that perovskite films grew when oxygen was supplied so as to just satisfy the stoichiometry of PZT.PbO is not necessary to just supplement its deficiency due to high volatility of Pb. This is a novel view point.Finally based on results a design method for target of quasi-metallic mode sputter deposition is proposed.

以同位素氧（18O_2）为原料制备PZT （Pb(Zr, Ti)O_3）薄膜，采用SIMS技术分析薄膜中氧的质量，研究了薄膜中氧的来源。首次发现用金属模式制备的薄膜中90%的氧来自PbO，其余10%来自氧气。因此PbO是主要的氧源。而在氧化模式下，30%的氧气来自PbO，因此氧气是主要的氧气来源。定量研究了靶材中Pb与Zr+Ti的比值，发现当比值大于3时，钙钛矿薄膜就会生长。这一结果表明，钙钛矿薄膜在供氧条件下生长，以满足PZT的化学计量。由于铅的高挥发性，不需要PbO来补充其不足。这是一个新颖的观点。最后在此基础上提出了一种准金属模式溅射沉积靶材的设计方法。

项目成果

K.Sasaki, W.Zhang, S.Kawagoe T.Hata: ""Origin of Oxigen in PZT Films Prepared by Metal-Oxide Combined Target" Proc.of 4th International Symposium on Sputtering and plasma process. 607-612 (1997)

K.Sasaki、W.Zhang、S.Kawagoe T.Hata：“金属氧化物组合靶材制备的 PZT 薄膜中氧的起源”第四届国际溅射和等离子体工艺研讨会论文集。607-612 (1997)

K.Sasaki et al.: "Origin of oxygen in PZT Films Prepared by Metal-Oxide Combined Target" Proc.of 4th International Symposium on Spattering and plasma process. 607-612 (1997)

K.Sasaki 等人：“金属氧化物组合靶材制备的 PZT 薄膜中氧的起源”第四届国际溅射和等离子体工艺研讨会论文集。

T.Hata et al.: "Propose of New Target for PZT Thin Films by Reactive Spattering" Proc.of 4th International Symposium on Spattering and plasma process. 617-622 (1997)

T.Hata 等人：“Propose of New Target for PZT Thin Films by Reactive Spattering”Proc.of 第四届国际溅射和等离子体工艺研讨会。

K.Sasaki W.Zhang ant T.Hata: "Origin of oxygen in Pb(Zr,Tr)O_3 films prepared by metal-oxide combined target." Vacuum. (to be published). (1998)

K.Sasaki W.Zhang 和 T.Hata：“金属氧化物组合靶材制备的 Pb(Zr,Tr)O_3 薄膜中氧的起源”。

T.Hata et al.: "Propse of New Mixture Target for Low Terperature and High Rate Deposition of PZT thin Films" Exterded Abstract of Solid State Devices and Materials. 36-37 (1997)

T.Hata 等人：“Propse of New Mixture Target for Low Terperature and High Rate Deposition of PZT Thin Films”Extered Abstract of Solid State Devices and Materials。