Low Temperature Preparation of Ferroelectric (PZT) Thin Films by New Sputter Deposition Mode and Investigation of Its Mechanisms

用SIMS技术分析了用同位素氧(18O2)制备的PZT(Ph(Zr，Ti)O_3)薄膜中氧的质量，研究了薄膜中氧的来源。对于金属模式制备的薄膜，首次发现薄膜中90%的氧来自PbO，其余10%来自氧气。因此，PbO是主要的氧源。定量研究了靶材中PbO与PbO的比例，发现当PbO与PbO的比例大于3时，有利于钙钛矿膜的生长。这一结果表明，当氧气供应时，钙钛矿薄膜的生长正好满足PZT的化学计量比。由于PbO的高挥发性，PbO不是仅仅为了补充它的不足而必须的。这是一个新的观点。最后，根据研究结果，提出了准金属模式溅射沉积靶材的设计方法。

Origin of oxygens in PZT (Pb(Zr, Ti)O_3) films prepared using isotope oxygen (18O_2) was investigated by analyzing the mass of oxygens in the films by SIMS technique. For a film prepared by metallic mode it was found for the first time that 90% oxygen in the film was from PbO and the rest 10% from oxygen gas. Thus PbO is the main oxygen source. While, for oxide mode 30% oxygen came from PbO, consequently, oxygen gas was the main oxygen source.Quantitatively investigating Pb ratio to Zr+Ti in targets, it was found that perovskite films were intended to grow when the ratio was more than 3. This result is recognized that perovskite films grew when oxygen was supplied so as to just satisfy the stoichiometry of PZT.PbO is not necessary to just supplement its deficiency due to high volatility of Pb. This is a novel view point.Finally based on results a design method for target of quasi-metallic mode sputter deposition is proposed.