Study on Compound-Semiconductor-Based Nonlinear Optical Devices

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1.Fabrication process of GaAs/A1GaAs QPM waveguidesWe have optimized the fabrication process for low-loss and high-efficiency QPM waveguiding devices. We have succeeded in planarize the QPM gtemplates by using CMP. We have also optimized regrowth conditions dor growing QPM GaAs wpicrystals on the planarized template.2.Parametric fluorescence in a GaAs waveguideQuasi phase matched parametric fluorescence for the pump light at 1.064 pm has been observed in a GaAs/AIGaAs periodically inverted waveguide. Temperature tuning characteristics and conversion efficiency obtained was consistent with the theoretical predictions.3.Microscopic characterization of GaAs antiphase boundariesWe have performed HVTEM and CL observations on the GaAs antiphase boundaries in order to characterize the geometrical and electronical structures of the boundaries. Antiphase boundaries fabricated under the unoptimized conditions have been. revealed to be degraded containing high-density nonradiative reconbination centers.4.Sublattice reversal epitaxy on InP substratesWe have sucseeded in realizing sublattice reversal epitaxy on InP substrates. Sublattice reversed InGaAs and GaAs van be grown by using Ge interlayers.5. Redetermination of nonlinear optical coefficient of GaNWe have redetermined nonlinear optical coefficients of GaN epitaxyally grown on c-sapphire substrate by MBE. Obtained tentative value was about a half of the reported values.