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Study on Compound-Semiconductor-Based Nonlinear Optical Devices

化合物半导体非线性光学器件的研究

基本信息

批准号：
14350031
负责人：
KONDO Takashi
金额：
$ 9.54万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350031/
关键词：
Nonlinear optics Sublattice reversal epitaxy Cascaded effects Wavelength conversion Compound semiconductor Quasi phase matching Device fabrication process Molecular beam epitaxy モノリシック集積化擬似位相整合

项目摘要

1.Fabrication process of GaAs/A1GaAs QPM waveguidesWe have optimized the fabrication process for low-loss and high-efficiency QPM waveguiding devices. We have succeeded in planarize the QPM gtemplates by using CMP. We have also optimized regrowth conditions dor growing QPM GaAs wpicrystals on the planarized template.2.Parametric fluorescence in a GaAs waveguideQuasi phase matched parametric fluorescence for the pump light at 1.064 pm has been observed in a GaAs/AIGaAs periodically inverted waveguide. Temperature tuning characteristics and conversion efficiency obtained was consistent with the theoretical predictions.3.Microscopic characterization of GaAs antiphase boundariesWe have performed HVTEM and CL observations on the GaAs antiphase boundaries in order to characterize the geometrical and electronical structures of the boundaries. Antiphase boundaries fabricated under the unoptimized conditions have been. revealed to be degraded containing high-density nonradiative reconbination centers.4.Sublattice reversal epitaxy on InP substratesWe have sucseeded in realizing sublattice reversal epitaxy on InP substrates. Sublattice reversed InGaAs and GaAs van be grown by using Ge interlayers.5. Redetermination of nonlinear optical coefficient of GaNWe have redetermined nonlinear optical coefficients of GaN epitaxyally grown on c-sapphire substrate by MBE. Obtained tentative value was about a half of the reported values.

1. GaAs/Al GaAs QPM波导的制作工艺优化了低损耗、高效率QPM波导器件的制作工艺。我们成功地利用CMP对QPM模板进行了平坦化。在GaAs/AlGaAs周期倒置波导中观察到了1.064 pm泵浦光的准相位匹配参量荧光。获得的温度调谐特性和转换效率与理论预测一致。3. GaAs反相边界的微观表征我们对GaAs反相边界进行了HVTEM和CL观察，以表征边界的几何结构和电子结构。在未优化的条件下制备了反相边界。4. InP衬底上的亚晶格反转外延我们成功地在InP衬底上实现了亚晶格反转外延。采用Ge中间层可以生长出亚晶格反转的InGaAs和GaAs货车. GaN非线性光学系数的重新测定我们重新测定了用分子束外延法在c-蓝宝石衬底上外延生长的GaN的非线性光学系数。获得的暂定值约为报告值的一半。