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Development of high-frequency-compatible scanning tunneling microscope and application to the electronic phase separation in strongly correlated electron systems

Development of high-frequency-compatible scanning tunneling microscope and application to the electronic phase separation in strongly correlated electron systems
高频兼容扫描隧道显微镜的研制及其在强相关电子系统电子相分离中的应用
批准号:
14350040
负责人:
HANAGURI Tetsuo
金额:
$6.78万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2003

项目摘要

项目成果

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中文摘要
翻译
在这项研究中,我们的目标是研究强关联电子系统中的电子相分离。强关联电子系统基于所谓的Mott绝缘体,并显示出许多新的现象,如高温超导。电子相分离的研究需要一种纳米级空间分辨率的实验技术。因此,我们使用了扫描隧道显微镜/光谱(STM/STS)。此外,我们还试图开发一种新的技术,交流扫描隧道显微镜,以研究较少的导电样品。在金属-Mott-绝缘体转变(Mott转变)附近,电子相分离的趋势应该是最强的。有两种类型的莫特跃迁,即填充控制的莫特跃迁和带宽控制的莫特跃迁。我们对填充控制和带宽控制的Ca<2-x≫Na_xCuO_2Cl2和Ni(S,Se)_2分别进行了低温STM/STS研究。我们发现在填充控制Mott转变附近存在明显的纳米级电子不均匀。明显的“金属”区域随着掺杂量的增加而增加。这一结果表明,填充控制系统中的金属-绝缘体转变与渗流有关。相反,即使在Mott跃迁附近,带宽控制系统的电子态也是相对均匀的。在高温超导体Ca_<2-x>Na_xCuO_2Cl2中,我们发现在所谓的伪隙相中存在棋盘状的周期性电子态调制。对于交流STM,虽然我们还没有完成构建,但我们设计了一种可以配备半刚性同轴电缆的高频兼容STM的原型。我们相信,这种新的STM将在不久的将来发挥作用。
英文摘要
In this study, we aimed to study the electronic phase separations, which are expected in strongly-correlated-electron systems. The strongly-correlated-electron systems are based on so-called Mott insulators and show many novel phenomena such as high-temperature superconductivity. The study of electronic phase separations demands an experimental technique with nano-scale spatial resolution. Therefore, we used scanning tunneling microscopy/spectroscopy (STM/STS). Also, we tried to develop a new technique, alternating-current STM, to study less conducting samples.The tendency to the electronic phase separation should be strongest around the metal-to-Mott-insulator transition (Mott transition). There are two types of Mott transitions, namely, filling-controlled and bandwidth-controlled Mott transitions. We performed low temperature STM/STS on Ca_<2-x>Na_xCuO_2Cl_2 and Ni(S, Se)_2 which are filling- and bandwidth-controlled systems, respectively. We found that there is marked nano-scale electronic inhomogeneity around the filling-control Mott transition. The apparently "metallic" region increases with increasing doping. This result suggests that the metal-insulator transition in the filling-controlled system is related to the percolation. On the contrary, electronic states of the bandwidth-controlled system are relatively uniform even near the Mott transition. In Ca_<2-x>Na_xCuO_2Cl_2, which is one of the high-temperature superconductors, we found a periodic modulation of the electronic states with a checkerboard-like pattern in a so-called pseudogap phase.As to the alternating-current STM, though we have not completed the construction, we designed a prototype of the high-frequency-compatible STM which can be equipped with semi-rigid coaxial cables. We believe that this new STM will work in near future.
期刊论文(38)
专著(0)
科研奖励(0)
会议论文
DOI: --
发表时间: 2003
期刊: Physical Review B 67
影响因子: --
作者: [G.Kinoda et al.]
通讯作者: G.Kinoda et al.
DOI: --
发表时间: 2003
期刊: Rev. Sci. Instrum. 74
影响因子: --
作者: [N.Sako, Y.Tanaka, T.Kurokawa, H., Tsuda, M.Naganuma, T.Hanaguri et al.]
通讯作者: T.Hanaguri et al.
T.Hanaguri: "Anomaly of quasi-particle density of states in the vortex state of NbSe^2"Physica B. (印刷中).
T. Hanaguri:“NbSe^2 涡旋态中的准粒子态密度异常”Physica B.(出版中)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Y.Kohsaka: "Real space imaging of the electronic states in underdoped Ca_<2-x>Na_xCuO_2Cl_2 single crystals"Journal of Low Temperature Physics. (印刷中).
Y.Kohsaka:“欠掺杂 Ca_<2-x>Na_xCuO_2Cl_2 单晶中电子态的真实空间成像”《低温物理学杂志》(正在出版)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
共 15 条
    Phase structures of superconducting gaps in iron-based superconductors
    Superconducting gap in high-temperature superconductors
    Search for New Quantum Effects in Superconducting Vortices
    • 批准号:
      12450003
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $4.93万
    • 财政年份:
      2000
    • 负责人:
      HANAGURI Tetsuo
    • 依托单位:
    Thermodynamic study of mixed states of quasi-two-dimensional superconductors
    • 批准号:
      07650004
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $1.54万
    • 财政年份:
      1995
    • 负责人:
      HANAGURI Tetsuo
    • 依托单位:
    海外基金