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Development of Ultra Thinning Technology of Multifunctional Device Substrates by Abrasive Processing

Development of Ultra Thinning Technology of Multifunctional Device Substrates by Abrasive Processing
多功能器件基板磨削加工超薄化技术的发展
批准号:
14350074
负责人:
TOUGE Mutsumi
金额:
$9.73万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2003

项目摘要

项目成果

TOUGE Mutsumi的其他基金

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中文摘要
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英文摘要
This research was performed to develop the ultra thinning technology of three kinds of multifunctional device substrates, and finally this technology is aimed to establish as the mass production technology. The device substrates used in this research were quartz substrate, barium titanate (BaTiO_3), and lithium niobate (LiNbO_3). First of all, the slight waviness generated in the quartz substrate during the polishing can be difficulties in making the ultra thin substrates. The waviness generated in the substrate was induced by the compressive force from the protective-plating film, confirmed by the computer simulation calculated by Dr. Sakamoto ; this can make the correction of the plating formation condition. As experimental results, it has been understood that there is the optimum value of the plating thickness to suppress these compressive forces. The plating formation conditions (plating voltage, plating liquid temperature, and electric current density) were clarified. Moreover, th … More e cylindrical column implant processing was newly developed to achieve the mass production. It finally succeeded in the establishment of the mass production technology of ultra thin quartz substrate with 4 μm in thickness and 5.2 mm in diameter. The barium titanate substrate (BaTiO_3) was also achieved in the processing up to 13 μm in the final thickness by applying the improved technique of the above-mentioned plating method. The lithium niobate (LiNbO_3) was processed from the original shape with 3-inch wafer and 350 μm in thickness. Ultra thin wafer with 20 μm in thickness with an excellent flatness within 1 μm in the entire substrate were achieved. Finally, these wafers were cut into about 500 chips of 2.0 mm×0.4 mm using the precision dicing machine. In addition, the thinning of 6-inch silicon wafer was performed by the precision grinding machine using newly developed fine diamond wheels including comparative large pores. By supplying the grinding fluid to superimpose the ultrasonic vibration to the grinding process, silicon wafer with 50 μm in the final thickness can be obtained, and the micro chip with 1.0 mm×1.0 mm were obtained for the micro-pressure sensor. These sensors will be incorporate into a "smart microchip" to monitor the biological information of the transgenic mouse or the knock-out mouse. Less
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气浮精密砂带磨削形成高精度加工表面第2部分:氧化铝陶瓷精密砂带磨削
DOI: --
发表时间: 2004
期刊: 砥粒加工学会誌 48巻・4号
影响因子: --
作者: [豊浦 茂, 峠 睦, 渡邉純二]
通讯作者: 渡邉純二
渡邉純二, 峠 睦, 藤井修治: "チタン酸バリウムセラミックスの極薄型化加工技術の研究"2002年度精密工学会秋季大会学術講演会講演論文集. 137 (2002)
渡边淳二、峠毛睦美、藤井修二:《钛酸钡陶瓷超薄加工技术的研究》2002年日本精密工程学会秋季会议学术会议论文集137(2002)。
DOI: --
发表时间:
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作者: []
通讯作者:
マイクロ圧力センサー形成ウェハの薄片化技術
微压力传感器成型晶圆的薄切片技术
DOI: --
发表时间: 2004
期刊: 2004年度砥粒加工学会学術講演会講演論文集
影响因子: --
作者: [長野智和, 伊東 岳, 峠 睦, 渡邉純二]
通讯作者: 渡邉純二
峠 睦, 渡邉純二, 増崎正彦, 山内勝利, 下石平己: "気孔形成剤添加ダイヤモンドホイールによるシリコンウェハの精密研削と薄片化"2003年度精密工学会秋季大会学術講演会講演論文集. 213 (2003)
Mutsumi Toge、Junji Watanabe、Masahiko Masuzaki、Katsutoshi Yamauchi、Hiromi Shimoishi:“使用添加成孔剂的金刚石砂轮对硅晶片进行精密研磨和薄切片”2003年日本精密工程学会秋季会议学术会议论文集213。 (2003)
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作者: []
通讯作者:
20
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