Optimal fabrication processes for high-efficiency chalcopyrite thin-film solar-cells

高效黄铜矿薄膜太阳能电池的最佳制造工艺

• 批准号: 14350161
• 负责人: ITO Kentaro
• 金额: $ 9.79万
• 依托单位: Faculty of Engineering, Shinshu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350161/
• 关键词: thin film; solar cell; chalcopyrite; conversion efficiency; precursor; sulfurization; film adhesion; short circuit curent; バッファー層; CBD (Chemical Bath Deposition); 化合物半導体; CuInS_2; Cu(In, Ga)S_2; 表面処理; 光吸収体; 溶液成長法; 無害化

The purpose of the present research work is to improve the performance of a chalcopyrite thin-film solar cell and the adhesion of the film to a Mo-coated soda lime glass substrate. The results of our investigation are summarized as follows.In the first step of sulfurization, we prepared a CuGaS_2 thin film on the substrate, where the Cu to Ga ratio of a vacuum-evaporated metallic precursor was equal to 1.0. In the second step, an optical absorber layer of CulnS_2 was prepared on it by sulfurization of a stacked precursor layer consisting of Cu/In. The Cu to In ratio was varied from 1.3 to 2.3. When the ratio is larger than 1.7, the cell exhibited a large short-circuit current density. This is considered to be due to the presence of Cu_xS quantum dots formed in the absorber layer. Solar cells with efficiency up to 11% was obtained using a Cu to In ratio between 1.7 and 2.1.Using a precursor consisting of vacuum-evaporated GaS, In and Cu, we prepared a Cu(In,Ga)S_2 thin film. A high efficiency solar cell was obtained with the GaS thickness of 40nm and the Cu/In ratio of 1.2. When the GaS is made thicker, inhomogeneous distribution of In prevails, eventually leading to an inefficient solar cell. The performance of the best cell was as follows : open circuit voltage is 673mV, short circuit current density 22.7mA/cm2, fill factor 0.61 and efficiency 10.8%.Adhesion of the chalcopyrite film to the substrate was improved by incorporation of Al into the absorber layer. Even if the Cu/(In+Al) ratio of a sputtered metallic precursor is increased to 2.7, peeling of the film was not observed. A CuAlS_2 thin layer was obtained by sulfurization in a closed quartz ampoule as a first chalcopyrite, The layer exhibited p-type conductivity, resistivity higher than 60 Ωcm and energy bandgap of 3.5eV.

本研究工作的目的是提高辣椒薄膜太阳能电池的性能，并改善膜对Mo涂层的苏打水液体玻璃底物的胶粘剂。我们的研究结果总结如下。在硫化的第一步中，我们在底物上制备了CUGAS_2薄膜，在底物上，真空蒸发的金属前体的Cu与GA比等于1.0。在第二步中，Culns_2的光吸收层是通过由Cu/in组成的堆叠前体层的硫化来制备的。铜与比率从1.3到2.3不等。当比率大于1.7时，细胞暴露了较大的短路电流密度。这被认为是由于吸收层中形成的cu_xs量子点的存在。使用CU与1.7至2.1之间的Cu比率获得了效率高达11％的太阳能电池。使用真空蒸发的气体组成的前体和Cu，我们制备了Cu（in，GA）S_2薄膜。以40nm的气体厚度和1.2的CU/为1.2，获得了高效率太阳能电池。当气体变厚时，盛行中的不均匀分布，最终导致太阳能电池效率低下。最佳电池的性能如下：开路电压为673mV，短路电流密度22.7mA/cm2，填充因子0.61和效率10.8％。将辣椒层膜粘附到底物上，通过将Al掺入吸收板层来改善。即使溅射金属前体的Cu/（以+Al）比增加到2.7，也没有观察到膜的剥离。通过在封闭的石英安培中硫化作为第一个辣椒岩，层暴露的p型电导率，高于60ΩCM的电阻率和3.5ev的能量带隙。

项目成果

H.Goto, Y.Hashimoto, K.Ito: "Efficient thin film solar cell consisting of TCO/CdS/CuInS_2/CuGaS_2 structure"Thin Solid Films. 451-452. 552-555 (2004)

H.Goto、Y.Hashimoto、K.Ito：“由 TCO/CdS/CuInS_2/CuGaS_2 结构组成的高效薄膜太阳能电池”固体薄膜。

(Zn,In)Sx alloy buffer for CuInS_2 solar cells

用于 CuInS_2 太阳能电池的 (Zn,In)Sx 合金缓冲层

• 发表时间: 2003
• 期刊: CD Proc.3^<rd> World conf.Photovoltaic Energy Conversion
• 作者: Y.Hashimoto;Y.Kobayashi;K.Ito
• 通讯作者: K.Ito

Y.Onuma, et al.: "Cross-sectional analysis of CuInS_2 thin film prepared by electroplated precursor"Jpn.J.Appl.Phys.. 43・1. L108-L110 (2004)

Y.Onuma等人：“电镀前驱体制备的CuInS_2薄膜的截面分析”Jpn.J.Appl.Phys.43·1(2004)。

Efficient thin film solar cell consisting of TCO/CdS/CuInS_2/CuGaS_2 structure

TCO/CdS/CuInS_2/CuGaS_2结构组成的高效薄膜太阳能电池

• 发表时间: 2004
• 期刊: Thin Solid Films 451-452
• 作者: H.Goto;Y.Hashimoto;K.Ito
• 通讯作者: K.Ito

Cross-sectional analysis of CuInS_2 thin film prepared by electroplated precursor

电镀前驱体制备CuInS_2薄膜的截面分析

• 发表时间: 2004
• 期刊: Jpn.J.Appl.Phys. 43・1
• 作者: Y.Onuma;Y.Hashimoto;K.Ito;et al.
• 通讯作者: et al.