Optimal fabrication processes for high-efficiency chalcopyrite thin-film solar-cells

高效黄铜矿薄膜太阳能电池的最佳制造工艺

• 批准号: 14350161
• 负责人: ITO Kentaro
• 金额: $ 9.79万
• 依托单位: Faculty of Engineering, Shinshu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350161/
• 关键词: thin film; solar cell; chalcopyrite; conversion efficiency; precursor; sulfurization; film adhesion; short circuit curent; バッファー層; CBD (Chemical Bath Deposition); 化合物半導体; CuInS_2; Cu(In, Ga)S_2; 表面処理; 光吸収体; 溶液成長法; 無害化

The purpose of the present research work is to improve the performance of a chalcopyrite thin-film solar cell and the adhesion of the film to a Mo-coated soda lime glass substrate. The results of our investigation are summarized as follows.In the first step of sulfurization, we prepared a CuGaS_2 thin film on the substrate, where the Cu to Ga ratio of a vacuum-evaporated metallic precursor was equal to 1.0. In the second step, an optical absorber layer of CulnS_2 was prepared on it by sulfurization of a stacked precursor layer consisting of Cu/In. The Cu to In ratio was varied from 1.3 to 2.3. When the ratio is larger than 1.7, the cell exhibited a large short-circuit current density. This is considered to be due to the presence of Cu_xS quantum dots formed in the absorber layer. Solar cells with efficiency up to 11% was obtained using a Cu to In ratio between 1.7 and 2.1.Using a precursor consisting of vacuum-evaporated GaS, In and Cu, we prepared a Cu(In,Ga)S_2 thin film. A high efficiency solar cell was obtained with the GaS thickness of 40nm and the Cu/In ratio of 1.2. When the GaS is made thicker, inhomogeneous distribution of In prevails, eventually leading to an inefficient solar cell. The performance of the best cell was as follows : open circuit voltage is 673mV, short circuit current density 22.7mA/cm2, fill factor 0.61 and efficiency 10.8%.Adhesion of the chalcopyrite film to the substrate was improved by incorporation of Al into the absorber layer. Even if the Cu/(In+Al) ratio of a sputtered metallic precursor is increased to 2.7, peeling of the film was not observed. A CuAlS_2 thin layer was obtained by sulfurization in a closed quartz ampoule as a first chalcopyrite, The layer exhibited p-type conductivity, resistivity higher than 60 Ωcm and energy bandgap of 3.5eV.

本研究工作的目的是提高黄铜矿薄膜太阳能电池的性能和膜的附着力的钼涂层的钠钙玻璃基板。我们的研究结果总结如下：在硫化的第一步，我们在衬底上制备了CuGaS_2薄膜，其中真空蒸发的金属前体的Cu与Ga的比例等于1.0。在第二步中，通过硫化由Cu/In组成的堆叠前体层在其上制备CuInS_2的光学吸收层。Cu与In的比率在1.3至2.3之间变化。当该比率大于1.7时，电池表现出大的短路电流密度。这被认为是由于在吸收层中形成的Cu_xS量子点的存在。当铜铟比为1.7 ~ 2.1时，太阳能电池的效率可达11%。采用真空蒸镀GaS、In和Cu组成的前驱体，制备了Cu（In，Ga）S2薄膜。获得了GaAs厚度为40 nm、Cu/In比为1.2的高效率太阳电池。当GaS变得更厚时，In的分布不均匀，最终导致太阳能电池效率低下。最佳电池的开路电压为673 mV，短路电流密度为22.7mA/cm ~ 2，填充因子为0.61，效率为10.8%，吸收层中加入Al后，黄铜矿薄膜与基体的结合力得到改善。即使溅射金属前体的Cu/（In+Al）比增加到2.7，也没有观察到膜的剥离。在封闭的石英坩埚中硫化得到CuAlS_2薄层作为第一黄铜矿，该层具有p型导电性，电阻率大于60 Ωcm，禁带宽度为3.5eV。

项目成果

H.Goto, Y.Hashimoto, K.Ito: "Efficient thin film solar cell consisting of TCO/CdS/CuInS_2/CuGaS_2 structure"Thin Solid Films. 451-452. 552-555 (2004)

H.Goto、Y.Hashimoto、K.Ito：“由 TCO/CdS/CuInS_2/CuGaS_2 结构组成的高效薄膜太阳能电池”固体薄膜。

(Zn,In)Sx alloy buffer for CuInS_2 solar cells

用于 CuInS_2 太阳能电池的 (Zn,In)Sx 合金缓冲层

• 发表时间: 2003
• 期刊: CD Proc.3^<rd> World conf.Photovoltaic Energy Conversion
• 作者: Y.Hashimoto;Y.Kobayashi;K.Ito
• 通讯作者: K.Ito

Efficient thin film solar cell consisting of TCO/CdS/CuInS_2/CuGaS_2 structure

TCO/CdS/CuInS_2/CuGaS_2结构组成的高效薄膜太阳能电池

• 发表时间: 2004
• 期刊: Thin Solid Films 451-452
• 作者: H.Goto;Y.Hashimoto;K.Ito
• 通讯作者: K.Ito

Y.Onuma, et al.: "Cross-sectional analysis of CuInS_2 thin film prepared by electroplated precursor"Jpn.J.Appl.Phys.. 43・1. L108-L110 (2004)

Y.Onuma等人：“电镀前驱体制备的CuInS_2薄膜的截面分析”Jpn.J.Appl.Phys.43·1(2004)。

Cross-sectional analysis of CuInS_2 thin film prepared by electroplated precursor

电镀前驱体制备CuInS_2薄膜的截面分析

• 发表时间: 2004
• 期刊: Jpn.J.Appl.Phys. 43・1
• 作者: Y.Onuma;Y.Hashimoto;K.Ito;et al.
• 通讯作者: et al.