High Efficiency CuInS_2 Thin Film Solar Cells

高效率CuInS_2薄膜太阳能电池

基本信息

  • 批准号:
    11450137
  • 负责人:
  • 金额:
    $ 6.14万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1999
  • 资助国家:
    日本
  • 起止时间:
    1999 至 2001
  • 项目状态:
    已结题

项目摘要

A 12.25 % efficiency solar cell has been achieved using the CuInS_2 thin film as an optical absorber layer produced by a sequential process that is advantageous to mass production of large area cells. Here we added a small amount of Ga to a metallic precursor and then sulfurized it by rapid thermal process to obtain a flat absorber layer with good crystallinity.The diode factor and the dark current density of a heterojunction was decreased by using a composite buffer layer which consists of a very thin Zn compound layer sandwiched between a CdS buffer layer and an absorber layer. The efficiency of the cell was thus improved to 12.1 %.In the heterojunction consisting of chemical bath deposited Zn( S, O, OH ) and In( S, O, OH ) thin buffer layer instead of toxic CdS, we observed conduction band offsets of 0.4 eV ( energy cliff ) and 0.8 eV ( energy spike ), respectively. The solar cell with the former ( latter ) heterojunction exhibited a 7 % ( 10.1 % ) efficiency. In the former ( latter ) case, we needed annealing of the heterojunction ( surface treatment of the absorber surface by an iodide solution ).The various characteristics of the thin film solar cell such as capacitance-voltage curve, current-voltage curve and spectral photoresponse could be explained by a theretical device model, where we assume the existence of a thin n-type CulnS_2 layer at the heterointerface. The experimental finding that the open-circuit voltage increases with decreasing the electric field at the junction agreed fairly well with the theoretical expectation.
采用顺序工艺制备的CuInS_2薄膜作为光吸收层,获得了12.25%的太阳能电池效率,有利于大面积电池的批量生产。在金属前体中加入少量Ga,然后通过快速热处理使其硫化,得到结晶性良好的平坦吸收层,并通过在CdS缓冲层和吸收层之间夹入一层很薄的Zn化合物层,降低了异质结的二极管因子和暗电流密度。在化学浴沉积Zn(S,O,OH)和In(S,O,OH)薄缓冲层代替有毒的CdS组成的异质结中,我们观察到导带偏移分别为0.4eV(能量悬崖)和0.8eV(能量尖峰)。具有前(后)异质结的太阳能电池表现出7%(10.1%)的效率。在前(后)种情况下,我们需要对异质结进行退火(用碘化物溶液对吸收体表面进行表面处理),薄膜太阳能电池的各种特性,如电容-电压曲线、电流-电压曲线和光谱光响应,都可以用一个理论的器件模型来解释,其中假设在异质结界面处存在一个薄的n型CuInS_2层。开路电压随结处电场的减小而增大的实验结果与理论预期相当吻合。

项目成果

期刊论文数量(50)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
K.Okamoto: "CuInS_2 Thin Film Solar Cell Prepared by Optimized Cd-Free Process"To be published in the Proceedings of the 17-<th> European Photovoltaic Solar Energy Conference.
K.Okamoto:“通过优化的无镉工艺制备的CuInS_2薄膜太阳能电池”将发表在第17届欧洲光伏太阳能会议的会议记录上。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
K.Ichino et al.: "Optimization of fabrication processes for a Cu(In, Ga)S_2 thin film solar cell"Proc. 16^<th> European Photovoltaic Solar Energy Conference, pp 717-720,2000. 717-720 (2000)
K.Ichino 等人:“Cu(In, Ga)S_2 薄膜太阳能电池制造工艺的优化”Proc.
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    0
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ITO Kentaro其他文献

Electrochemical Substrates and Systems for Enzyme-Based Bioassays
用于酶生物测定的电化学基质和系统
  • DOI:
    10.2116/bunsekikagaku.71.109
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0.2
  • 作者:
    UTAGAWA Yoshinobu;ITO Kentaro;INOUE Kumi Y.;NASHIMOTO Yuji;INO Kosuke;SHIKU Hitoshi
  • 通讯作者:
    SHIKU Hitoshi

ITO Kentaro的其他文献

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{{ truncateString('ITO Kentaro', 18)}}的其他基金

Mathematical model for spontaneous formation of transportation network in living organisms
生物体自发形成运输网络的数学模型
  • 批准号:
    15K17589
  • 财政年份:
    2015
  • 资助金额:
    $ 6.14万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Boundaries of deformation spaces of Kleinian groups
克莱因群变形空间的边界
  • 批准号:
    23540083
  • 财政年份:
    2011
  • 资助金额:
    $ 6.14万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Deformation spaces of Kleinian groups and conformal geometry
克莱因群的变形空间和共形几何
  • 批准号:
    19740032
  • 财政年份:
    2007
  • 资助金额:
    $ 6.14万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Optimal fabrication processes for high-efficiency chalcopyrite thin-film solar-cells
高效黄铜矿薄膜太阳能电池的最佳制造工艺
  • 批准号:
    14350161
  • 财政年份:
    2002
  • 资助金额:
    $ 6.14万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Metal-Semiconductor Contacts for Sensor Application
用于传感器应用的金属-半导体触点
  • 批准号:
    01460138
  • 财政年份:
    1989
  • 资助金额:
    $ 6.14万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)

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