Structure analysis of lattice defects in near bulk specimens combining high-voltage electron microscopy and electron energy loss spectroscopy.
Structure analysis of lattice defects in near bulk specimens combining high-voltage electron microscopy and electron energy loss spectroscopy.
批准号:
22246090
负责人:
HIGASHIDA Kenji
金额:
$29.79万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010-04-01 至 2014-03-31
中文摘要
晶体材料断裂物理研究突破的关键是可视化和模拟裂纹尖端等大应力强化区域周围大量晶格缺陷(主要是位错)的结构。结合高压电子显微镜和电子能量损失谱,我们成功地开发了厚度大于5μm的样品中位错结构的三维TEM分析。这一工作有助于发展考虑裂纹与位错相互作用的微观断裂力学。
英文摘要
The key to break though the study on fracture physics in crystalline materials is visualizing and modeling the structures of the large number of lattice defects (mainly dislocations) around the area with large stress intensified such as a crack tip. We succeeded to develop a three-dimensional TEM analysis of dislocation structures in the specimens with the thickness more than 5µm, combining high-voltage electron microscopy and electron energy loss spectroscopy. Tis work contributes to the development of micro-fracture mechanics which take into account the interaction between a crack and dislocations.
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電子線トモグラフィーによる転位の三次元可視化技術
使用电子断层扫描的位错三维可视化技术
DOI:
--
发表时间:
2010
期刊:
顕微鏡
影响因子:
--
作者:
[S.Yamada, K.Hamaya, T.Murakami, B.Varaprasad, Y.K.Takahashi, A.Rajanikanth, K.Hono, M.Miyao, T. Goto, 田中將己]
通讯作者:
田中將己
Electron tomograhy of dislocation structures
位错结构的电子断层扫描
DOI:
--
发表时间:
2014
期刊:
Mater. Charact.
影响因子:
--
作者:
[G.S. Liu, S. Hous, J. Kacher, M. Tanaka, K. Higashida, I.M. Robertson]
通讯作者:
I.M. Robertson
The Early Stage of Dislocation Process around a Crack Tip Observed by HVEM-Tomography in Silicon Single Crystals
HVEM-断层扫描观察硅单晶裂纹尖端位错过程的早期阶段
DOI:
--
发表时间:
2011
期刊:
Mater. Trans.
影响因子:
--
作者:
[M. Tanaka, S. Sadamatsu, H. Nakamura, K. Hgashida]
通讯作者:
K. Hgashida
Transition from a punched-out dislocation to a slip dislocation revealed by electron tomography
电子断层扫描显示从冲出位错到滑移位错的转变
DOI:
--
发表时间:
2010
期刊:
Mater. Res.
影响因子:
--
作者:
[M. Tanaka, G. S. Liu, T. Kishida, K. Higashida, I. M. Robertson]
通讯作者:
I. M. Robertson
HVEMTomographyによる亀裂先端転位の発生・増殖機構解明
利用 HVEM 断层扫描阐明裂纹尖端位错的产生和扩散机制
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[M. Tanaka, K. Higashida, S. Sadamatsu, H. Nakamura, M.Tanaka, K.Higashida, 中村拓人,定松直,本田雅幹,田中將己,東田賢二]
通讯作者:
中村拓人,定松直,本田雅幹,田中將己,東田賢二
共 43 条
3-D analyses for crack tip dislocations by using electron tomography
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批准号:18360305
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.97万
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财政年份:2006
-
负责人:HIGASHIDA Kenji
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依托单位:
Mesoscopic-scale dynamics of materials fracture and workability of silicon crystals
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批准号:16360316
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.04万
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财政年份:2004
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负责人:HIGASHIDA Kenji
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依托单位:
Microstructure of Crack Tip Plastic Zone and Fracture Toughness In Silicon Crystals
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批准号:14550656
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.3万
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财政年份:2002
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负责人:HIGASHIDA Kenji
-
依托单位:
TEM analysis for meso-scale textures developed in heavily deformed Fe-alloys
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批准号:12650662
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.3万
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财政年份:2000
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负责人:HIGASHIDA Kenji
-
依托单位:
Development of in-sutu observation system for internal stress fields due to lattice defects using the infrared photoelastic method
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批准号:11555162
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$1.02万
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财政年份:1999
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负责人:HIGASHIDA Kenji
-
依托单位:
Study on the dislocation emission around a crack tip by using high-voltage electron microscopy
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批准号:10650651
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.18万
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财政年份:1998
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负责人:HIGASHIDA Kenji
-
依托单位:
Visualization of crack-grain boundary interaction in transparent crystals
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批准号:08650770
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$0.32万
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财政年份:1996
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负责人:HIGASHIDA Kenji
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依托单位:
海外基金