Mesoscopic-scale dynamics of materials fracture and workability of silicon crystals

材料断裂的细观动力学和硅晶体的可加工性

基本信息

  • 批准号:
    16360316
  • 负责人:
  • 金额:
    $ 7.04万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2004
  • 资助国家:
    日本
  • 起止时间:
    2004 至 2005
  • 项目状态:
    已结题

项目摘要

Mesoscopic-scale dynamics of materials fracture have been investigated based on the theory of crack-dislocation interaction. Particular attention has been paid on fracture and deformation behaviors in silicon single crystals.Since silicon single crystals exhibit a sharp transition from brittle-to-ductile behavior in the narrow temperature range, they have attracted much attention as model crystals to understand the dislocation process for toughening crystalline materials. In this research, the nature of crack tip dislocations and their multiplication processes in silicon crystals have been examined by using high-voltage electron microscopy. The crack tip dislocations observed were characterized by matching their images to those simulated, and it was found that they were shielding type which increases fracture toughness of materials. In addition to this, three-point bending tests were made at high temperatures around 1100K in order to introduce dislocations around a crack tip. And crack … More tip stress fields were visualized by infrared photoelastic method in those silicon crystals deformed at high temperatures. By using this method, it was confirmed that the compressive stress field was formed around the crack tip by the introduction of dislocations, and that the compressive stress fields substantially increases the fracture toughness of silicon crystals. Further, the dislocation distribution was simulated by using the program code developed by Dr. Hartmaier, MPI, and the simulated photoelastic images using the calculated dislocation distribution were in good agreement with the observed images.From the viewpoint of the research on the workability of silicon crystals, the effects of impurity and strain rate on the behavior of brittle-to-ductile transition was investigated. In this study, boron was added, which caused the increase of brittle-to-ductile transition temperature (BDTT). Based on the results of strain rate dependence of BDTT, activation energy for brittle-to-ductile transition was estimated, and the value estimated coincided well with the value of the activation energy of dislocation glide. Those results suggest that the problem of brittle-to-ductile transition and workability of silicon crystals are fundamentally discussed based on the theory of dislocation motion and the interaction between crack and dislocations. Less
基于裂纹-位错相互作用理论,研究了材料断裂的细观尺度动力学。硅单晶的断裂和变形行为受到了特别的关注,由于硅单晶在很窄的温度范围内表现出从脆性到韧性的急剧转变,因此作为理解位错增韧结晶材料过程的模型晶体受到了广泛的关注。在这项研究中,裂纹尖端位错的性质和他们的增殖过程中,硅晶体已使用高压电子显微镜检查。将观察到的裂纹尖端位错的图像与模拟结果进行匹配,发现它们是屏蔽型位错,从而提高了材料的断裂韧性。除此之外,为了在裂纹尖端周围引入位错,在1100 K左右的高温下进行了三点弯曲试验。和裂纹 ...更多信息 用红外光弹方法观察了高温变形硅晶体的尖端应力场。通过使用这种方法,它被证实,压应力场周围的裂纹尖端的位错的引入,和压应力场显着提高硅晶体的断裂韧性。利用Hartmaier博士开发的MPI程序对位错分布进行了模拟,模拟得到的位错分布光弹图像与实测图像吻合较好。从研究硅晶体加工性能的角度出发,研究了杂质和应变速率对脆塑转变行为的影响。在这项研究中,硼的加入,这导致脆韧性转变温度(BDTT)的增加。基于BDTT的应变速率依赖性结果,估算了脆性-韧性转变激活能,估算值与位错滑移激活能吻合较好。这些结果表明,基于位错运动理论和裂纹与位错的相互作用,对硅晶体的脆韧转变和加工性能问题进行了初步探讨。少

项目成果

期刊论文数量(6)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Fracture Toughness Evaluated by Indentation Methods and Its Relation to Surface Energy in Silicon Single Crystals
  • DOI:
    10.2320/matertrans.44.681
  • 发表时间:
    2003-04
  • 期刊:
  • 影响因子:
    1.2
  • 作者:
    Masaki Tanaka;K. Higashida;H. Nakashima;H. Takagi;M. Fujiwara
  • 通讯作者:
    Masaki Tanaka;K. Higashida;H. Nakashima;H. Takagi;M. Fujiwara
Microstructure of plastic zones around crack tips in silicon revealed by HVEM and AFM
Crack Tip Stress Fields Revealed by Infrared Photoelasticity in Silicon Crystals
硅晶体中红外光弹性揭示的裂纹尖端应力场
シリコン結晶における破壊靱性値の方位依存性と表面エネルギー
硅晶体断裂韧性和表面能的取向依赖性
  • DOI:
  • 发表时间:
    2004
  • 期刊:
  • 影响因子:
    0
  • 作者:
    田中將己;東田賢二;中島英治;高木秀有;藤原雅美
  • 通讯作者:
    藤原雅美
{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

HIGASHIDA Kenji其他文献

HIGASHIDA Kenji的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('HIGASHIDA Kenji', 18)}}的其他基金

Structure analysis of lattice defects in near bulk specimens combining high-voltage electron microscopy and electron energy loss spectroscopy.
结合高压电子显微镜和电子能量损失光谱对近块体样品中的晶格缺陷进行结构分析。
  • 批准号:
    22246090
  • 财政年份:
    2010
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
3-D analyses for crack tip dislocations by using electron tomography
使用电子断层扫描进行裂纹尖端位错的 3D 分析
  • 批准号:
    18360305
  • 财政年份:
    2006
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Microstructure of Crack Tip Plastic Zone and Fracture Toughness In Silicon Crystals
硅晶体裂纹尖端塑性区的微观结构与断裂韧性
  • 批准号:
    14550656
  • 财政年份:
    2002
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
TEM analysis for meso-scale textures developed in heavily deformed Fe-alloys
严重变形铁合金细观织构的 TEM 分析
  • 批准号:
    12650662
  • 财政年份:
    2000
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of in-sutu observation system for internal stress fields due to lattice defects using the infrared photoelastic method
利用红外光弹法开发晶格缺陷引起的内应力场原位观测系统
  • 批准号:
    11555162
  • 财政年份:
    1999
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Study on the dislocation emission around a crack tip by using high-voltage electron microscopy
裂纹尖端周围位错发射的高压电子显微镜研究
  • 批准号:
    10650651
  • 财政年份:
    1998
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Visualization of crack-grain boundary interaction in transparent crystals
透明晶体中裂纹与晶界相互作用的可视化
  • 批准号:
    08650770
  • 财政年份:
    1996
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

相似国自然基金

镍基UNS N10003合金辐照位错环演化机制及其对力学性能的影响研究
  • 批准号:
    12375280
  • 批准年份:
    2023
  • 资助金额:
    53.00 万元
  • 项目类别:
    面上项目

相似海外基金

Characterization of the interaction mechanism between carbon cluster and dislocation in steel
钢中碳簇与位错相互作用机制的表征
  • 批准号:
    22KJ2381
  • 财政年份:
    2023
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for JSPS Fellows
Analytical study of yield point phenomena and work-hardening by dislocation accumulation modelbased on the multi-surface plasticity theory
基于多面塑性理论的位错累积模型对屈服点现象和加工硬化的分析研究
  • 批准号:
    23K03592
  • 财政年份:
    2023
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of plastic theory based on statistical mechanics to realize effect of dislocation behavior
发展基于统计力学的塑性理论以实现位错行为的效果
  • 批准号:
    23K18458
  • 财政年份:
    2023
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Challenging Research (Exploratory)
Elucidation of plasticity and brittleness of protein crystals based on dislocation theory
基于位错理论阐明蛋白质晶体的塑性和脆性
  • 批准号:
    23H01305
  • 财政年份:
    2023
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Study on the origin of "grains" with different dislocation distributions in lattice-mismatched epitaxial films
晶格失配外延膜中不同位错分布“晶粒”的起源研究
  • 批准号:
    23K04603
  • 财政年份:
    2023
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
パワーデバイス劣化機構の解明に向けた格子欠陥のオペランド観察技術の開発
开发晶格缺陷原位观察技术以阐明功率器件劣化机制
  • 批准号:
    23H01872
  • 财政年份:
    2023
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Backcasting Materials Design through Uncovering Mechanisms of Electronic and Thermal Conduction by Control Dislocation and Grain boundaries
通过控制位错和晶界揭示电子和热传导机制来进行背铸材料设计
  • 批准号:
    23H01671
  • 财政年份:
    2023
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Quantification of damage evolution involved with the interaction of hydrogen, dislocation, and vacancy-type defect in metals ~ For predicting life degradation caused by hydrogen embrittlement ~
量化金属中氢、位错和空位型缺陷相互作用所涉及的损伤演化 ~ 用于预测氢脆引起的寿命退化 ~
  • 批准号:
    23KJ1934
  • 财政年份:
    2023
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for JSPS Fellows
Enhancement of strength-ductility trade-off by microstructure control of C-doped FeNiCoCr HEA.
通过 C 掺杂 FeNiCoCr HEA 的微观结构控制增强强度-延展性权衡。
  • 批准号:
    22K20478
  • 财政年份:
    2022
  • 资助金额:
    $ 7.04万
  • 项目类别:
    Grant-in-Aid for Research Activity Start-up
Pathogenicity of the emerging pathogen Kingella kingae
新出现的病原体金氏菌的致病性
  • 批准号:
    10559927
  • 财政年份:
    2022
  • 资助金额:
    $ 7.04万
  • 项目类别:
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了