Study on nanoscale chemical reactions and reaction sites using quantum beams
Study on nanoscale chemical reactions and reaction sites using quantum beams
批准号:
22246128
负责人:
KOZAWA Takahiro
金额:
$21.96万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2012
中文摘要
在半导体器件的大批量生产线上,通过昂贵的高质量量子束和廉价的低质量热能的结合,实现了高分辨率和高通量制造。在这项研究中,利用最先进的量子光束,如电子束、激光、极紫外(EUV)辐射和x射线,研究了纳米尺度的化学反应和反应位点。在此基础上,开发了蒙特卡罗仿真代码。
英文摘要
In the high-volume production lines of semiconductor devices, high-resolution and high-throughput manufacturing has been achieved through the combination of expensive high-quality quantum beam and inexpensive low-quality thermal energy. In this study, nanoscale chemical reactions and reaction sites were investigated by using state-of-the-art quantum beams such as electron beam, laser, extreme ultraviolet (EUV) radiation, and X-ray. On the basis of the obtained knowledge, Monte Carlo simulation code was developed.
期刊论文(21)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Electron and Hole Transfer in Anion-Bound Chemically Amplified Resists Used in ExtremeUltraviolet Lithography
用于极紫外光刻的阴离子结合化学放大抗蚀剂中的电子和空穴转移
DOI:
10.7567/apex.6.014001
发表时间:
2013
期刊:
Appl. Phys. Express
影响因子:
--
作者:
[Y. Komuro, H. Yamamoto, Y. Utsumi, K. Ohomori, and T. Kozawa]
通讯作者:
and T. Kozawa
Relationship between Absorption Coefficient and Line Edge Roughness of Chemically Amplified Resists Used for Extreme Ultraviolet Lithography
极紫外光刻用化学放大光刻胶吸收系数与线边缘粗糙度的关系
DOI:
--
发表时间:
2012
期刊:
J. Photopolym. Sci. Technol
影响因子:
--
作者:
[小野浩之, ドドビバ・ジョルジ, 定木淳, 藤田豊久, Y. Nakamura, T. Kozawa]
通讯作者:
T. Kozawa
Chemical Gradient of Contact Hole Latent Image Created in Chemically Amplified ExtremeUltraviolet Resists
化学放大极紫外光刻胶中产生的接触孔潜像的化学梯度
DOI:
10.7567/jjap.52.046502
发表时间:
2013
期刊:
Jpn. J. Appl. Phys
影响因子:
--
作者:
[Takeshi Fujiwara, Mitsuru Uesaka, 他, T. Kozawa and T. Hirayama]
通讯作者:
T. Kozawa and T. Hirayama
Effect of Molecular Weight and Protection Ratio on Latent Image Fluctuation of Chemically Amplified ExtremeUltraviolet Resists
分子量和防护率对化学放大极紫外光刻胶潜像波动的影响
DOI:
10.1143/jjap.51.126501
发表时间:
2012
期刊:
Jpn. J. Appl. Phys
影响因子:
--
作者:
[J-A. Kim, G. Dodbiba, Y. Tanimura, K. Mitsuhashi, N. Fukuda, K. Okaya, S. Matsuo, T. Fujita, T. Kozawa]
通讯作者:
T. Kozawa
Dynamics of Radical Cation of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Extreme-Ultraviolet and Electron Beam Lithographies
用于极紫外和电子束光刻的聚(4-羟基苯乙烯)基化学放大抗蚀剂的自由基阳离子动力学
DOI:
10.1143/jjap.49.106501
发表时间:
2010
期刊:
Jpn. J. Appl. Phys.
影响因子:
--
作者:
[K. Okamoto, M. Tanaka, T. Kozawa, and S. Tagawa]
通讯作者:
and S. Tagawa
共 19 条
Study on the expanse of thermalized electrons in condensed matters
-
批准号:21656238
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.03万
-
财政年份:2009
-
负责人:KOZAWA Takahiro
-
依托单位:
Study on nanoscale chemical reaction for the establishment of scientific foundation of ultrafine patterning using extreme ultraviolet radiation
-
批准号:19360428
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.23万
-
财政年份:2007
-
负责人:KOZAWA Takahiro
-
依托单位:
海外基金