Study of Modulation Doped Quantum Wires.

调制掺杂量子线的研究。

• 批准号: 11694158
• 负责人: NAKASHIMA Hisao
• 金额: $ 5.25万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11694158/
• 关键词: quantum wire; GaAs; InAs; micro-photoluminescence; scanning cathodoluminescence; molecular beam epitaxy; scanning tunneling microscopy; modulation doping; 励起子; 光伝導; フォトルミネセンス; 電気抵抗

We have demonstrated that GaAs, AlGaAs, InAs and InGaAs quantum wires were naturally formed on vicinal GaAs(110) surfaces with giant growth steps. These quantum wires were induced by the thickness and/or composition modulation at giant step edges. Transmission electron microscopy and photoluminescence (PL) measurements consistently confirmed the formation of quantum wires. Formation of InAs quantum wires was observed using scanning tunneling microscopy combined with molecular beam epitaxy. PL peaks of modulation doped GaAs quantum wires shifted with doping level and excitation intensity. Electronic resistance parallel to the wires was much lower than that perpendicular to the wires, showing the quantum wires were successfully modulation doped.The micro-PL spectra from single AlGaAs quantum wires at 4K inhibited one peak with low energy tail and sharp high energy Fermi edge. These features was quite different from those of GaAs quantum wires which showed many sharp lines which came from localized excitons, indicating that AlGaAs quantum wires were more uniform. There results were very consistent with the scanning cathodoluminescence images. Using scanning cathodoluminescence, electron-hole pairs were excited by electron beam through Al mask. The luminescence observed from the aperture in Al mask showed the one-dimensional exciton flow.

我们已经证明了GaAs，AlGaAs，InAs和InGaAs量子线是自然形成的邻位GaAs（110）表面上的巨大的生长步骤。这些量子线是由巨台阶边缘的厚度和/或成分调制引起的。透射电子显微镜和光致发光（PL）测量一致证实了量子线的形成。使用扫描隧道显微镜结合分子束外延观察InAs量子线的形成。调制掺杂GaAs量子线的PL峰随掺杂水平和激发强度的变化而发生位移。在4K下，单根AlGaAs量子线的微区光致发光谱抑制了一个峰值，峰值具有低能尾和尖锐的高能费米边。这些特征与GaAs量子线的特征有很大不同，GaAs量子线显示出许多来自局域激子的尖锐线条，表明AlGaAs量子线更均匀。这些结果与扫描阴极发光图像非常一致。利用扫描阴极发光技术，通过铝掩模用电子束激发电子空穴对。从Al掩模上的小孔观察到的发光显示了一维激子流。

项目成果

T.Nishida: "Photoluminescence of modulation doped GaAs quantum wires on vicinal GaAs (110) substrates."Microelectronic Eng.. 47. 171-173 (1999)

T.Nishida：“邻位 GaAs (110) 基板上调制掺杂 GaAs 量子线的光致发光。”微电子工程 47. 171-173 (1999)

K.Kobayashi: "Photoluminescence inner core excitation in semiconductor quantum structures"Physica E. (in press).

K.Kobayashi：“半导体量子结构中的光致发光内核激发”Physica E.（出版中）。

S.Hasegawa: ""Scanning tunneling microscopy study of InAs islanding on GaAs(001).""J.Crystal Growth. (in press).

S.Hasekawa：“GaAs(001) 上 InAs 孤岛效应的扫描隧道显微镜研究。”J.Crystal Growth。

B.R.Shim: "Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates."J.Korean Phys.Soc.. 35. S599-S603 (1999)

B.R.Shim：“GaAs 邻位 (110) 基板上 InGaAs 应变量子线的透射电子显微镜和光致发光表征。”J.Korean Phys.Soc.. 35. S599-S603 (1999)

K.Bando: ""Photoluminescence of InAs Quantum Wires on Vicinal GaAs(110) Substrates""Microelectronic Eng.. 47. 163-165 (1999)

K.Bando：“邻位 GaAs(110) 衬底上 InAs 量子线的光致发光”《微电子工程》47. 163-165 (1999)