Development of nm-scale soft-X-ray spectroscopy electron microscope and its application to BN materials

纳米级软X射线能谱电子显微镜的研制及其在BN材料中的应用

• 批准号: 12440079
• 负责人: TERAUCHI Masami
• 金额: $ 9.47万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12440079/
• 关键词: Sof-X-ray spectroscopy; Transmission electron microscope; BN; DOS of valence bands; loco-regional; カーボンナノチューブ; cubic BN; wurtzite BN; 電子系励起状態

We have developed a high energy-resolution soft-X-ray spectrometer for a transmission electron microscope to obtain the information of the density of states(DOS)of the valence band (occupied states) from identified small specimen areasThe spectrometer was composed of varied-line-spacing(VLS)gratings and a CCD detector. An energy range from 60eV to 1200eV was accessible by using two VLS gratings, which have line densities of 1200 and 2400 lines/mm. the size of the CCD detector was 27.6x27.6mm2,which corresponds to a collection angle of 6.5x10.^<-4>sr. By introducing X-ray reflection flat mirrors, spectral intensity was improved by 2.2 times. Thus, the effective collection angle of the spectrometer was 1.4x10.^<-3>sr. Energy resolutions of this spectrometer for Si L-emission(〜100eV),B K-emission(〜180eV)and Cu L-emission(〜930eV)were evaluated to be 0.1,0.4 and 1.4eV, respectively.This spectrometer successfully obtained the DOS of the valence band from specified amall specimen areas of h,c,w-BN,α, βboron, Si, carbon allotropes and quasicrystalsWe have been designing a new VLS grating to improve the energy resolution with a help of another Grant-in-Aid for Scientific research(B). The new spectrometer will give us an energy resolution of about 0.7eV at 1000eV

为了在透射电子显微镜上获得小面积样品的价带态密度信息，我们研制了一台高能量分辨率的软X射线谱仪。该谱仪由可变线距光栅和CCD探测器组成。采用线密度为1200和2400线/mm的两个VLS光栅，CCD探测器的尺寸为27.6 × 27.6mm ~ 2，对应的收集角为6.5 × 10 ~（-1）。<-4>通过引入X射线反射平面镜，光谱强度提高了2.2倍。因此，光谱仪的有效收集角为1.4 × 10 - 6。<-3>该谱仪对Si的L发射（~ 100 eV）、B的K发射（~ 180 eV）和Cu的L发射（~ 930 eV）的能量分辨率分别为0.1、0.4和1.4eV。碳同素异形体和准晶体我们一直在设计一种新的VLS光栅，以提高能量分辨率的帮助下，另一个补助金的科学研究（B）。新的光谱仪将在1000 eV处为我们提供约0.7 eV的能量分辨率

项目成果

A.Ohtake: "Strain-induced surface segregation in In0.5Ga0.5As/GaAs heteroepitaxy"Applied Physics Letters. 80・21. 3931-3933 (2002)

A.Ohtake：“In0.5Ga0.5As/GaAs异质外延中的应变引起的表面偏析”应用物理快报80・21 3931-3933（2002）。

S.-K.Hong: "Control of crystal polarity in a wurtzite crystal : Zn0 films grown by plasma-assisted molecular-beam epitaxy on GaN"Phys. Rev. B. 65. 115331-1-115331-10 (2002)

S.-K.Hong：“纤锌矿晶体中晶体极性的控制：通过等离子体辅助分子束外延在 GaN 上生长的 Zn0 薄膜”Phys。

M.Tanaka: "Convergent-Beam Electron Diffraction IV"JEOL-Maruzen. 352 (2002)

M.Tanaka：“会聚束电子衍射 IV”JEOL-Maruzen。

K.Saitoh: "Distinction between the space groups having rotation screw axes, which are combined with 2 fold rotation axes, using the coherent convergent-beam electron diffraction method"Acta Cryst.. A57・2(印刷中). (2001)

K.Saitoh：“使用相干会聚束电子衍射方法区分具有旋转螺旋轴的空间群，该空间群与 2 个折叠旋转轴相结合”Acta Cryst.. A57·2（出版中）。

M.Terauchi: "Production of zigzag-type BN Nanotubes and BN Cones by Thermal Annealing"Chemical Physics letters. 324・7. 359-364 (2000)

M. Terauchi：“通过热退火生产锯齿形 BN 纳米管和 BN 锥体”《化学物理快报》324・7 (2000)。