Study on The Emission Mechanism of Rare Earth Ions in Semiconductors and Its Application

半导体中稀土离子发射机理及其应用研究

• 批准号: 01550240
• 负责人: KIMURA Tadamasa
• 金额: $ 1.73万
• 依托单位: The University of Electro-Communications
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550240/
• 关键词: Rare Earth Atoms; Erbium; 4F Intrashell Electronic Transition Emission; Electron Impact Excitation; Energy Transfer Efficiency; Fluorescence Efficiency; エレクトロルミネッセンス(EL); フォトルミネッセンス(PL); 光デバイス; イオン注入法; IIIーV族半導体; 4f内殻遷移発光

The most important result that was found during this three year research done with a help of Grant-in-aid for Scientific Research is that we succeeded for the first time in observing the 1.54mum emission due to the 4f intrashell transition of Er^<3+> ions ( ^4I_<13/2>-> ^4I_<15/2>) which are doped in InP by ion implantation by means of a new excitation method, that is, electron impact excitation. Study on the emission of rare earth ions doped in III-V compound semiconductors and in Si semiconductor had been mostly carried out using the energy transfer mechanism from the recombination of electrons and holes which were generated by illumination (photoluminescence) or injected into a pn junction (LED). The problem was a low emission efficiency for lasing, thermal quenching at high temperatures, and little understanding of the precise energy transfer and non-radiative transition mechanisms. We have found that the 1.54 mum emission characteristics of the Er^<3+> ions in InP (spectrum and th … More e temperature dependence of the intensity) were different in essential between photoluminescence and impact excitation. We made a detailed comparison of the emission characteristics between photoluminescence and impact excitation, which made a great contribution to elucidating the emission mechanisms of rare earth ions doped in crystalline semiconductors. The following studies were carried. 1) Er-doping process into InP by means of ion implantation, 2) Impact excitation emission of Er/InP. 3) Analysis of excitation and emission mechanisms of Er ions, 4) Evaluation of emission efficiency and impact cross section.In conclusion, there are various Er3^+ emission centers in InP, and different centers are excited between photoluminescnce and impact excitation. the non-radiative transition mechanism is also different for different centers. We are planning to study further on the emission mechanism, improve the emission efficiency and challenge the impact excitation emission of other rare earth ions in other semiconductors (especially in Si). Less

在科学研究资助项目的帮助下，我们在三年的研究中发现的最重要的结果是，我们首次成功地观测到离子注入InP的Er^<3+>离子（^4I_<13/2>-> ^4I_<15/2>）的4f壳层跃迁引起的1.54mum发射，这是一种新的激发方法，即电子撞击激发。稀土离子在III-V化合物半导体和Si半导体中掺杂的发射研究，主要是利用照明（光致发光）或注入pn结（LED）中产生的电子与空穴复合的能量传递机制进行的。问题是激光的发射效率低，高温下的热淬火，以及对精确的能量传递和非辐射转变机制的了解很少。我们发现在InP中Er^<3+>离子的1.54 mum发射特性（光谱和强度的温度依赖性更强）在光致发光和冲击激发之间有本质的不同。我们对光致发光和冲击激发的发射特性进行了详细的比较，这对阐明稀土离子在晶体半导体中掺杂的发射机理有很大的贡献。进行了以下研究。1)通过离子注入将Er掺杂到InP中；2)Er/InP的冲击激发发射。3) Er离子激发和发射机理分析；4)发射效率和冲击截面评价。综上所述，InP中存在多种Er3^+发射中心，并且在光致发光和冲击激发之间被激发出不同的中心。不同中心的非辐射跃迁机制也不同。我们计划进一步研究发射机理，提高发射效率，挑战其他稀土离子在其他半导体（特别是Si）中的冲击激发发射。少

项目成果

T. Kimura, H. Isshiki, R. Saito, S. Yugo, and T. Ikoma: ""Impact Excitation Electroluminescence Spectra of Er ions in InP and the possibility of an efficient EL diode at 1.54mum"" Proceedings 1991 International Semiconductor Device Research Symposium, Cha

T. Kimura、H. Isshiki、R. Saito、S. Yugo 和 T. Ikoma：“InP 中 Er 离子的冲击激发电致发光光谱以及 1.54mum 高效 EL 二极管的可能性”1991 年国际半导体器件论文集

H.Isshiki: "Characteristics of the Electroluminescence and photoluminescence Emissions of Erbium Ions Doped in InP and the Energy Transfer Mechanism" Journal of Applied Physics. 70. 6993-6998 (1991)

H.Isshiki：“InP掺杂铒离子的电致发光和光致发光特性及能量传递机制”应用物理学杂志。

H.Isshiki: "Emissions of the 1.54μm Erirelated peaks by impact excitation of Er atoms in IuP and its characteristico" Physical concepts of Materials for Novel Optoelectronics Device Applicatiens 1:Matenials Growth and characterigation. 1361. 223-227 (1990

H.Isshiki：“IuP 中 Er 原子的冲击激发产生的 1.54μm Eri 相关峰的发射及其特征”用于新型光电子器件应用的材料的物理概念 1：材料生长和表征（1990 年）。

H.Isshiki,H.Kobayashi,S.Yugo,T.Kimura and T.Ikoma: "Impact excitation of the Erbiumーrelated 1.54μm luminescence peak in Erbiumーdoped InP" Appl.Phys.Lett.58. 484 (1991)

H.Isshiki、H.Kobayashi、S.Yugo、T.Kimura 和 T.Ikoma：“掺铒 InP 中与铒相关的 1.54μm 发光峰的冲击激发”Appl.Phys.Lett.58（1991）。

H.Isshiki: "Impact excitation of erbium-related 1.54 μm luminescence peak in erbium-doped InP" Applied Physico Letters. 58. 484-486 (1991)

H.Isshiki：“掺铒 InP 中与铒相关的 1.54 μm 发光峰的冲击激发”《应用物理学快报》58. 484-486 (1991)。