Development of Harmless Disposal System of Fluoride and Chloride Gases by Chemical Reaction with Metal Oxide

金属氧化物化学反应氟化物和氯化物气体无害化处理系统的开发

基本信息

  • 批准号:
    12555285
  • 负责人:
  • 金额:
    $ 5.63万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2000
  • 资助国家:
    日本
  • 起止时间:
    2000 至 2001
  • 项目状态:
    已结题

项目摘要

A new technology to make fluoride and chloride gases such as NF_3 CF_4 and BC1_3 harmless has been developed and a new concept on the removing of toxic gas to be used in the advanced process of materials has been established. The fluoride gases are toxic and special type of gases to be used in the process of manufacturing semiconductors and their specific applications include the dry etching of semiconductors, cleaning of CVD systems, the oxidation agent for rocket fuel etc. As a fluoride gas like NF3 is, however, toxic and highly chemically stable, if discharged into the atmosphere, it is liable to cause far-reaching adverse influences on global warning in the same manner as carbon dioxide gas and freon gas.The research team utilized the chemical reaction between fluoride gas and a metal chlorides and oxides, and established a new technology to make fluoride gas contained in the exhaust gas from semiconductor manufacturing plants convert directly into a harmless substance. Experimental results verify that the chemical reactions can be take place at substantially lower temperature of 80-400℃ as compared with the combustion treatment method. The other favorable characteristics are that continuous treatment is possible at a low temperature under atmospheric pressure, and that the process is compact easily controllable and safely operable at low running cost.
开发了一种新的氟、氯气体(如NF_3CF_4、BC1_3)无害化技术,为材料先进工艺中有毒气体的脱除提供了新的思路。氟化物气体是有毒的并且是在制造半导体的过程中使用的特殊类型的气体,并且它们的具体应用包括半导体的干法蚀刻、CVD系统的清洁、火箭燃料的氧化剂等。然而,由于像NF 3这样的氟化物气体是有毒的并且具有高度的化学稳定性,如果排放到大气中,它与二氧化碳气体、氟里昂气体一样,容易对全球预警造成深远的不利影响。研究小组利用氟化物气体与金属氯化物和氧化物之间的化学反应,并建立了一种新技术,使半导体制造厂排放的废气中含有的氟化物气体直接转化为无害物质。实验结果表明,与燃烧处理方法相比,化学反应可以在80-400℃的较低温度下进行。其它有利的特征是可以在低温和大气压下进行连续处理,并且该方法是紧凑的,易于控制,并且以低的运行成本安全地操作。

项目成果

期刊论文数量(36)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
H. yamamoto, T. Yatsuhashi, A. Kushida N. Murayama and J.Shibata: "Harmless Treatment of Global Warming Gases Exsorsted from Manufacturing Process of Semiconductors"Thermophysical Properties. Vol.22. 64-66 (2001)
H. yamamoto、T. Yatsuhashi、A. Kushida N. Murayama 和 J. Shibata:“半导体制造过程中排出的全球变暖气体的无害化处理”热物理性质。
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    0
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H. Yamamoto and J. Shibata: "Disposal of Waste Fluoride and Chloride Gases in the Manufacturing Process of Semiconductors"proceedings of Second International Conference on Material Processing for Properties (PMP2000). Vol.1. 685-688 (2000)
H. Yamamoto 和 J. Shibata:“半导体制造过程中废弃氟化物和氯化物气体的处理”第二届国际材料加工性能会议 (PMP2000) 论文集。
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    0
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J. Shibata and H. Yamamoto: "Harmless Disposal of Fluoride and Chioride Material Gases"Kagakusouchi. Vol.43, No.7. 49-55 (2001)
J. Shibata 和 H. Yamamoto:“氟化物和氯化物材料气体的无害化处置”Kagakusouchi。
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    0
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芝田隼次,山本秀樹: "特殊材料ガスの無害化処理"ケミカルエンジニアリング. 45巻. 35-41 (2000)
Junji Shibata,Hideki Yamamoto:“特殊材料气体的无毒处理”化学工程卷 45. 35-41 (2000)。
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  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Hideki Yamamoto and Junji Shibata: "Disposal of Waste Fluoride and Chloride Gases in the Manufacturing Process of Semiconductors"Proceedings of Second International Conference on Material Processing for Properties (PMP2000). Vol.1. 685-688 (2000)
Hideki Yamamoto 和 Junji Shibata:“半导体制造过程中废弃氟化物和氯化物气体的处理”第二届国际材料加工性能会议 (PMP2000) 论文集。
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    0
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SHIBATA Junji其他文献

SHIBATA Junji的其他文献

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{{ truncateString('SHIBATA Junji', 18)}}的其他基金

Separation and recovery of rare metals from secondary buttery using mineral processing and refining technologies
利用选矿和精炼技术从二次黄油中分离和回收稀有金属
  • 批准号:
    24360376
  • 财政年份:
    2012
  • 资助金额:
    $ 5.63万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Recycling Technology of Unused Wastes
未利用废物回收技术的发展
  • 批准号:
    17206091
  • 财政年份:
    2005
  • 资助金额:
    $ 5.63万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
A STUDY ON CONTACT MECHANISM AND CMP ACTION OF POLISHING PAD
抛光垫接触机理及CMP作用的研究
  • 批准号:
    17560104
  • 财政年份:
    2005
  • 资助金额:
    $ 5.63万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Application of Solvent Extraction to the Treatment of Waste Acid Mixture discharged from IT relating Industry
溶剂萃取在IT相关行业排放废酸混合物处理中的应用
  • 批准号:
    15360485
  • 财政年份:
    2003
  • 资助金额:
    $ 5.63万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A BASIC STUDY ON METAL CMP MECHANISM AND A TRIAL FOR PRODUCING CMP SLURRY BY SOL-GEL METHOD
金属CMP机理的基础研究及溶胶-凝胶法生产CMP浆料的试验
  • 批准号:
    15560101
  • 财政年份:
    2003
  • 资助金额:
    $ 5.63万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
PRECISION FINISHING OF MONO-CRYSTAL SILICON BALLS FOR SPHERICAL SEMI-CONDUCTORS
球形半导体用单晶硅球的精密加工
  • 批准号:
    13650130
  • 财政年份:
    2001
  • 资助金额:
    $ 5.63万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of Analysis System of Rheology Characteristics for Slurry containing Fine Powders
细粉浆料流变特性分析系统的研制
  • 批准号:
    10650921
  • 财政年份:
    1998
  • 资助金额:
    $ 5.63万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Production of Complex Fine Powders Using Solvent Extraction and Evaluation of the Powders
使用溶剂萃取法生产复杂细粉末以及粉末的评估
  • 批准号:
    08305042
  • 财政年份:
    1996
  • 资助金额:
    $ 5.63万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of continuous separation system for rare earth with solvent impregnated resin
溶剂浸渍树脂稀土连续分离系统的研制
  • 批准号:
    06555315
  • 财政年份:
    1994
  • 资助金额:
    $ 5.63万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
STUDIES OF THE SEPARATION OF RARE EARTHS WITH SOLVENT IMPREGNATED RESIN
溶剂浸渍树脂分离稀土的研究
  • 批准号:
    04650591
  • 财政年份:
    1992
  • 资助金额:
    $ 5.63万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
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