PRECISION FINISHING OF MONO-CRYSTAL SILICON BALLS FOR SPHERICAL SEMI-CONDUCTORS
PRECISION FINISHING OF MONO-CRYSTAL SILICON BALLS FOR SPHERICAL SEMI-CONDUCTORS
批准号:
13650130
负责人:
SHIBATA Junji
金额:
$2.56万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2002
中文摘要
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英文摘要
In this study, we focused our attention to a polishing technology for mono-crystal Silicon balls, which is very small (under 1 mm in diameter) and are expected to be applied to ball semi-conductors. The spherical surface of the ball-shaped semi-conductors should be finished in perfect smooth surface for making IC circuits on it, similarly for a Silicon wafer, by means of the photo-rithography method. The ball-shaped semi-conductors are excellent in production efficiency because precision silicon balls are easily mass-producedIn order to establish this new technology in the silicon semi-conductor's industry, the development of a new precision polishing machine for the small Silicon balls is demanded eagerlyAt the beginning of this study in 2001, we designed and produced a polishing device on trial and investigated its polishing abilities experimentally. At the same time, we tried to produce polishing slurry by the sol-gel method and got some successful results. However, these were not sufficient for actual applicationsThis year, we adopted a new idea, namely that centrifugal force should be used for polishing small Silicon balls and then built a polishing device. The polishing principle is suitable for high-speed, automated and mass-productive polishing of silicon balls. Therefore, we can expect drastic effects by the newly designed polishing deviceBy using the new polishing machine, the following results were obtained(1) The polishing machine has an excellent polishing ability for small Silicon balls(2) Polishing accuracy of roundness, achieved by the polishing machine, is better than conventional ones. That is, we can easily get the roundness under 0.0001 mm(3) This polishing method is suitable for automatic polishing process of Silicon balls
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Akiyosi,ODA, Masato,OHTA, Junji,SHlBATA, Takayasu,KIMURA: "A Basic Study on Chemical Mechanical Polishing (CMP), The 4th Manufacturing and Machine Tool Conference"The Japan Society of Mechanical Engineers. No.02-25. 213-214 (2002)
Akiyosi、ODA、Masato、OHTA、Junji、SHlBATA、Takayasu、KIMURA:“化学机械抛光 (CMP) 的基础研究,第四届制造和机床会议”日本机械工程师学会。
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関根洋和, 大田正人, 柴田順二, 木邑隆保: "ゾルゲル研磨剤の製造と加工特性の評価"2001年度砥粒加工学会学術講演会講演論文集. 401-403 (2001)
Hirokazu Sekine、Masato Ota、Junji Shibata、Takayasu Kimura:“溶胶-凝胶磨料的制造和加工特性评价”磨料加工学会2001年学术会议论文集401-403(2001)。
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織田晃嘉, 大田正人, 柴田順二: "CMPメカニズムの基礎研究"日本機械学会第4回生産加工・工作機械部門講演会論文集. 213-214 (2002)
Akiyoshi Oda、Masato Ota、Junji Shibata:《CMP 机构的基础研究》第 4 届日本机械工程师学会生产加工和机床分会会议论文集 213-214(2002 年)。
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織田晃嘉, 大田正人, 柴田順二: "CMPメカニズムの基礎研究"日本機械学会第4回生産加工・工作機械部門,講演会論文集. No.02-25. 213-214 (2002)
Akiyoshi Oda、Masato Ota、Junji Shibata:“CMP 机理的基础研究”,日本机械工程学会第四届生产加工和机床分部,会议记录第 213-214 号(2002 年)。
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H.SEKINE, M.OHTA, J.SHIBATA, T.KIMURA: "A BASIC STUDY ON CMP MECHANISM AND A TRIAL FOR CMP"Advances in Abrasive Technology. IV. 271-278 (2001)
H.SEKINE、M.OHTA、J.SHIBATA、T.KIMURA:“CMP 机制的基础研究和 CMP 的试验”磨料技术的进展。
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Separation and recovery of rare metals from secondary buttery using mineral processing and refining technologies
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批准号:24360376
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.74万
-
财政年份:2012
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负责人:SHIBATA Junji
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依托单位:
Development of Recycling Technology of Unused Wastes
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批准号:17206091
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$31.2万
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财政年份:2005
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负责人:SHIBATA Junji
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依托单位:
A STUDY ON CONTACT MECHANISM AND CMP ACTION OF POLISHING PAD
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批准号:17560104
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.24万
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财政年份:2005
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负责人:SHIBATA Junji
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依托单位:
Application of Solvent Extraction to the Treatment of Waste Acid Mixture discharged from IT relating Industry
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批准号:15360485
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.42万
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财政年份:2003
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负责人:SHIBATA Junji
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依托单位:
A BASIC STUDY ON METAL CMP MECHANISM AND A TRIAL FOR PRODUCING CMP SLURRY BY SOL-GEL METHOD
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批准号:15560101
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.37万
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财政年份:2003
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负责人:SHIBATA Junji
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依托单位:
Development of Harmless Disposal System of Fluoride and Chloride Gases by Chemical Reaction with Metal Oxide
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批准号:12555285
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$5.63万
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财政年份:2000
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负责人:SHIBATA Junji
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依托单位:
Development of Analysis System of Rheology Characteristics for Slurry containing Fine Powders
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批准号:10650921
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.6万
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财政年份:1998
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负责人:SHIBATA Junji
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依托单位:
Production of Complex Fine Powders Using Solvent Extraction and Evaluation of the Powders
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批准号:08305042
-
项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$4.03万
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财政年份:1996
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负责人:SHIBATA Junji
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依托单位:
Development of continuous separation system for rare earth with solvent impregnated resin
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批准号:06555315
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$5.18万
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财政年份:1994
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负责人:SHIBATA Junji
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依托单位:
STUDIES OF THE SEPARATION OF RARE EARTHS WITH SOLVENT IMPREGNATED RESIN
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批准号:04650591
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$0.77万
-
财政年份:1992
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负责人:SHIBATA Junji
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依托单位:
Deformation behavior of materials under sub-mum (nano) interference
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批准号:03650113
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.28万
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财政年份:1991
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负责人:SHIBATA Junji
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依托单位:
Precision Lapping of Substrata Such As Aluminum, etc. by Fixed Abrasives
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批准号:63550107
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.34万
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财政年份:1988
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负责人:SHIBATA Junji
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依托单位:
Flat Honing of New Ceramics with Diamond Lapping Film
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批准号:61550100
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.02万
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财政年份:1986
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负责人:SHIBATA Junji
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依托单位:
海外基金