A STUDY ON CONTACT MECHANISM AND CMP ACTION OF POLISHING PAD

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Today, the drastic change of our life to the information society has been brought by the rapid popularization of computers, which are associated with highly integrated IC and LSI. The production of IC and LSI depends upon the development of micro-precision processing technologies. Chemical Mechanical Polishing (CMP) is the typical technology necessary for producing multi-layer circuits of IC and LSI by the damascene method on a silicon wafer, where surface of each circuit layer must be made to be perfectly smooth. The required flatness for the surface finished by CMP in production process would be now less than 100 Å.CMP is polishing technology concerning mainly with the planarization, but the polishing mechanism made by polishing pad and agent manufactured by the sol-gel method has not completely made clear yet. In this study we were using the polishing properties such as stock removal, surface roughness and their correlation as a basis valuation to investigate the polishing acting point. As a result, we estimated that the number of polishing acting point is limited and stable. When the polishing force is increased we estimate the acting point number would increase. We observed the increase of the polishing acting point number which should cause by the amount of material in polishing.Finally, we get to the conclusion that physical properties of polishing pad such as surface texture, flexibility, etc., would play an important role in CMP process because contact points of the pad with the work surface, which are the action point of CMP, are directly influenced by he physical properties of the pad.