权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

A STUDY ON CONTACT MECHANISM AND CMP ACTION OF POLISHING PAD

抛光垫接触机理及CMP作用的研究

基本信息

批准号：
17560104
负责人：
SHIBATA Junji
金额：
$ 2.24万
依托单位：
SHIBAURA INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560104/
关键词：
CMP POLISHING PAD CHEMICAL ACTION PHYSICAL ACTION GLASS SLURRY Si SOLID CONTACT 表面トポグラフィ微小変形ポリウレタン

项目摘要

Today, the drastic change of our life to the information society has been brought by the rapid popularization of computers, which are associated with highly integrated IC and LSI. The production of IC and LSI depends upon the development of micro-precision processing technologies. Chemical Mechanical Polishing (CMP) is the typical technology necessary for producing multi-layer circuits of IC and LSI by the damascene method on a silicon wafer, where surface of each circuit layer must be made to be perfectly smooth. The required flatness for the surface finished by CMP in production process would be now less than 100 Å.CMP is polishing technology concerning mainly with the planarization, but the polishing mechanism made by polishing pad and agent manufactured by the sol-gel method has not completely made clear yet. In this study we were using the polishing properties such as stock removal, surface roughness and their correlation as a basis valuation to investigate the polishing acting point. As a result, we estimated that the number of polishing acting point is limited and stable. When the polishing force is increased we estimate the acting point number would increase. We observed the increase of the polishing acting point number which should cause by the amount of material in polishing.Finally, we get to the conclusion that physical properties of polishing pad such as surface texture, flexibility, etc., would play an important role in CMP process because contact points of the pad with the work surface, which are the action point of CMP, are directly influenced by he physical properties of the pad.

今天，计算机的迅速普及给我们的生活带来了信息社会的巨大变化，而计算机与高度集成的集成电路和大规模集成电路有关。集成电路和大规模集成电路的生产依赖于微精密加工技术的发展。化学机械抛光（CMP）是在硅片上采用大马士革法生产集成电路和大规模集成电路多层电路所必需的典型技术，其中每层电路的表面必须完全光滑。CMP在生产过程中所要求的表面平整度现在将小于100 Å。CMP是一种抛光技术，主要涉及抛光表面的平面化，但溶胶-凝胶法制备的抛光垫和抛光剂的抛光机理尚不完全清楚。在本研究中，我们使用抛光性能，如去除率，表面粗糙度及其相关性作为评估抛光作用点的基础。因此，我们估计抛光作用点的数量是有限的和稳定的。当抛光力增大时，我们估计作用点数也会增大。我们观察到抛光作用点数的增加，这应该是由抛光材料的量引起的。最后，我们得出抛光垫的物理性能，如表面纹理、柔韧性等，将在CMP过程中发挥重要作用，因为抛光垫与工作表面的接触点是CMP的作用点，直接受到抛光垫物理性能的影响。