权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Tracking of tritium trapped on/in high-Z materials by BIXS

通过 BIXS 追踪高 Z 材料上/中捕获的氚

基本信息

批准号：
13480133
负责人：
MATSUYAMA Masao
金额：
$ 9.15万
依托单位：
TOYAMA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13480133/
关键词：
tritium nondestructive measurement bremsstrahlung x-ray spectrum characteristic x-ray spectrum depth profile tritium inventory accountability safe handling technique 拡散係数

项目摘要

Trap and/or diffusion behavior of tritium in high-Z materials such as W and Mo, which are promising candidate as plasma-facing materials of fusion devices, have been studied by means of β-ray-induced X-ray spectrometry (BIXS). Main results obtained in the present study were as follows :(1) Diffusion behavior of tritium in W at room temperatureA given amount of tritium ions was implanted in a tungsten sample, and then change in β-ray-induced X-ray spectra at room temperature was tracked. The X-ray spectra observed were analyzed by means of computer simulation to estimate tritium depth profiles in tungsten. From change in the depth profiles, the diffusion coefficient of tritium at room temperature was estimated to be 2.4x10^<19> m^2/s.(2) Thermal behavior of tritium ions implanted into WThe tungsten sample irradiated with tritium was stepwise heated from room temperature to 700℃, and an X-ray spectrum was measured after each heating As a result, both X-ray intensities of Ar and W decreased with the increase of temperature, and they decreased to about 10% of the initial intensity at 500℃, indicating hat most of the implanted tritium desorbed from surface layers and bulk of the sample.(3) Effect of He pre-irradiation on the trap and diffusion behavior of tritiumWhen tritium was implanted into the He pre-irradiation sample, the X-ray intensity of Ar was about 5 times great in comparison with the He non-irradiation sample, and no change in the intensity at room temperature was observed for five months. Namely, it was seen that the retention of tritium strongly increased with the He pre-irradiation. The amount of tritium in surface layers decreased with heating, but that in bulk did not change up to 350℃. This indicates that the implanted tritium was strongly trapped at lattice imperfections formed by the He pre-irradiation, and the trapping energy of tritium was estimated to be about 1.2eV.

氚在高 Z 材料（例如 W 和 Mo）中的俘获和/或扩散行为已经通过 β 射线诱导 X 射线光谱（BIXS）进行了研究，这些材料是聚变装置的面向等离子体材料的有希望的候选者。本研究取得的主要结果如下：(1)室温下氚在W中的扩散行为将一定量的氚离子注入钨样品中，然后跟踪室温下β射线诱导的X射线能谱的变化。通过计算机模拟分析观察到的 X 射线光谱，以估计钨中的氚深度分布。根据深度剖面的变化，估计室温下氚的扩散系数为2.4x10^<19>m^2/s。 (2)注入W的氚离子的热行为将氚辐照的钨样品从室温逐步加热到700℃，每次加热后测量X射线谱。结果，Ar和W的X射线强度均下降随着温度的升高，它们在500℃时下降到初始强度的10％左右，这表明大部分注入的氚从样品的表层和本体中解吸出来。（3）He预辐照对氚的捕获和扩散行为的影响当氚注入到He预辐照样品中时，Ar的X射线强度约为He的5倍未辐照样品，室温下五个月未观察到强度变化。即，可知氚的保留量随着He预照射而大幅增加。随着加热，表面层的氚量减少，但本体的氚量在350℃以下没有变化。这表明注入的氚被He预辐照形成的晶格缺陷处强烈俘获，并且氚的俘获能量估计约为1.2eV。