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A Novel Contactless and Nondestructive Measurement Method of Surface State Density on Semiconductor Free Surface, and Control of Their Surfaces

半导体自由表面表面态密度的新型非接触无损测量方法及其表面控制

基本信息

批准号：
03452147
负责人：
HASEGAWA Hideki
金额：
$ 4.48万
依托单位：
Hokkaido University, (Faculty of Engineering)
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

(1) A novel photoluminescence (PL)-based measurement method (PL Surface State Spectroscopy : PLS^3) for semiconductor surface state density, N_<ss>, was newly developed. It consists of detailed measurement of the band-edge photoluminescence efficiency as a function of the excitation intensity, and its rigorous analysis by computer. By this method, N_<ss> distribution as well as the value of surface recombination velocity, S, can be determined in a contactless and nondestructive fashion. (2) The proposed PLS^3 technique was successfully applied for the first time for in-situ determination of the N_<ss> distribution on variously processed free surface of GaAs, InP, InGaAs and Si. Chemically etched, anodized and passivated surfaces, as well as the original as-received surface, give rise to U-shaped surface state density distributions with characteristic charge neutrality energy levels, E_<HO>, which is consistent with the disorder induced gap state (DIGS) model. The usefulness of the present method for the assessment of ultrahigh-vacuum-based processes, such as MBE growth and photo-CVD, was also confirmed. (3) Combined use of a developed C-V simulation technique and PLS^3 technique revealed the existence of continuous U-shaped states at growth interrupted interfaces of MBE GaAs, and lattice matched and pseudmorphic heterointerfaces. The previously observed carrier profile anomaly around the interface can be explained by these continuous states. (4) Schottky barrier height of Al/GaAs(100) can be precisely controlled over a wide range of about 400 meV by the insertion of an ultrathin MBE Si interface control layer (Si ICL) with suitable doping. The result is consistent with a proposed model for Schottky barrier formation. Moreover, HF treatment of GaAs surface before PCVD-SiO_2 deposition is highly effective in suppressing the interface reactions during rapid thermal annealing.

(1)提出了一种新的基于光致发光（PL）的半导体表面态密度N_的测量方法（PL表面态谱：PLS ^[3]）<ss>。它包括详细的测量作为激发强度的函数的带边光致发光效率，并通过计算机对其进行严格的分析。用这种方法<ss>可以非接触、无损地测定N分布和表面复合速度S值。(2)本文提出的PLS ^3技术首次成功地应用于<ss>GaAs、InP、InGaAs和Si不同加工自由表面N_2分布的原位测定。化学腐蚀、阳极氧化和钝化表面以及原始接收表面产生具有特征电荷中性能级E_的U形表面态密度分布，<HO>这与无序诱导隙态（DIGS）模型一致。本方法用于评估超高真空工艺，如MBE生长和光CVD，也证实了有用的。(3)结合C-V模拟技术和PLS^3技术，发现在MBE GaAs生长中断界面处存在连续的U形态，以及晶格匹配和赝象异质界面。以前观察到的界面附近的载流子分布异常可以解释这些连续的状态。(4)通过插入适当掺杂的超薄MBE Si界面控制层（Si ICL），可以将Al/GaAs（100）的肖特基势垒高度精确控制在约400 meV的宽范围内。结果与提出的肖特基势垒形成模型一致。此外，在PCVD-SiO_2淀积前对GaAs表面进行HF处理，可以有效地抑制快速热退火过程中的界面反应。