Equipping a transmission electron microscope with a field emission electron gun.

配备带有场发射电子枪的透射电子显微镜。

• 批准号: 13555006
• 负责人: TANJI Takayoshi
• 金额: $ 8.51万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555006/
• 关键词: carbon nano-tube; field emission electron gun; surface decomposition of SiC; precise diamond cutter; focused ion beam (FIB); 収束イオンピーム(FIB)加工; 配向成長; 表面分解法; 炭化珪素; 精密ダイヤモンドカッター; FIB; 電界放出形電子銃; SiC

We investigated to apply carbon nano-tubes (CNT) to field emission electron guns for transmission electron microscopes (TEM). Fundamental tips of SiC are prepared by a precision diamond cutter and CNTs are grown by surface decomposition on the top (000-1) surface. The detail of the process is shown hereafter:1.A rod of SiC single crystal along <0001> orientation having a top surface of 0.5mmx0.5mm is cut out by the precise diamond sow with a blade of a special figure. 2.The strain introduced in the cutting process is removed by chemical etching and chemical washing. 3.Focused Ion Beam (FIB) processing are introduced to make the rod thinner. To avoid damaging the top surface, SiO_2, Al or Won Al was evaporated on the rods. 4.Removed the layer of SiO_2 or Al, the rods were heat-treated in a vacuum of 1Pa at 1700℃ for 6hours. The growth of CNTs was confirmed even on the top surface of 0.2μmx0.3μm. 5.In order to give a high conductivity to the tip, graphite layers were grown on a (1210) surface by a heat-treatment in the vacuum of 1x10^<-2>Pa at 1700℃ for 10hours.Field emission characteristics were measured in a high vacuum chamber less than 1x10^<-7>Pa and emission patterns were observed on a fluorescent screen.

研究了将碳纳米管（CNT）应用于透射电子显微镜（TEM）的场发射电子枪。用精密金刚石刀具制备SiC基尖，在（000-1）面上表面分解生长碳纳米管。具体工艺如下：1.<0001>用金刚石精密播种机，用特殊形状的刀片，沿沿着取向切出一根顶面为0.5mm × 0.5mm的SiC单晶棒。2.通过化学蚀刻和化学清洗去除切割过程中引入的应变。3.采用聚焦离子束（FIB）工艺使棒的厚度变薄。为了避免对顶面的损伤，在棒上蒸镀SiO_2、Al或Won Al。4.去除SiO_2或Al层后，在1 Pa的真空中1700℃热处理6 h。在0.2μmx0.3μm的上表面上也证实了碳纳米管的生长。5.为了使尖端具有高导电性，在1x 10 ^ Pa的真空度下，在1700℃下热处理10小时，在（1210）表面上生长石墨层<-2>。在低于1x 10 ^ Pa的高真空室中测量了场发射特性<-7>，并在荧光屏上观察到发射图案。

项目成果

T.Tanji et al.: "Holographic Observation of Magnetic Fine-Structures in New Magnetic Materials."Microscopy and Microanalysis 2002, Quebec City, Canada. Aug.4-8. 30-31 (2002)

T.Tanji 等人：“新型磁性材料中磁性精细结构的全息观察”。显微镜和微分析，2002 年，加拿大魁北克市。

M.Hibino et al.: "Phase Contrast Transfer Function of Spherical Aberration Corrected Objective Lens."Proc.15th Int.Cong.on Electron Microscopy, Durban, South Africa, Sept.1-6. Vol.3. 39-40 (2002)

M.Hibino 等人：“球差校正物镜的相衬传递函数”。Proc.15th Int.Cong.on Electron Microscopy，南非德班，9 月 1-6 日。

K.Yamamoto, T.Hirayama, T.Tanji, M.Hibino: "Effects of Fresnel corrections for Phase-shifting electron holography"Microscopy and Microanalysis. 8(suppl.2). 24-25 (2002)

K.Yamamoto、T.Hirayama、T.Tanji、M.Hibino：“菲涅尔校正对相移电子全息术的影响”显微镜和微分析。

S.Tanaka et al.: "Transmission Electron Microscopy Study of an AIN Nucleation layer for the Growth of GaN on a 7-Degree Off-Oriented (001) Si Substrate by Metalorganic Vapor Phase Epitaxy."J.Crystal Growth. 260-3/4. 360-365 (2004)

S.Tanaka 等人：“通过金属有机气相外延在 7 度偏向 (001) Si 基板上生长 GaN 的 AIN 成核层的透射电子显微镜研究”。J.Crystal Growth。

丹司敬義: "磁性グラニュラー膜のローレンツ顕微鏡観察"まてりあ. 41・12. 890-891 (2002)

Takayoshi Tanji：“磁性颗粒薄膜的洛伦兹显微镜观察”材料41・12（2002）。