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GaInNAs vertical cavity surface emitting laser arrays for ultra-high speed and parallel data-links

用于超高速并行数据链路的 GaInNA 垂直腔表面发射激光器阵列

基本信息

批准号：
13555091
负责人：
MIYAMOTO Tomoyuki
金额：
$ 8.77万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555091/
关键词：
semiconductor laser optical network optical interconnect quantum well quantum dot VCSEL GaInNAs epitaxy

项目摘要

Low cost and high performance lasers are required in next short distance lightwave networks and optical LANs. The vertical cavity surface emitting laser (VCSEL) is important light source and the VCSEL with 1.1-1.6μm of wavelength is suitable for the optical fiber systems. This research is aiming to realize the long wavelength VCSEL for optical data links using GaAs based material.As GaAs based materials, highly strained GaInAs quantum well (QW), GaInNAs QW, GaInNAs quantum dot (QD) and GaInAsSb QD are grown using CBE, MBE and MOCVD epitaxial techniques for realizing high emission efficiency and long wavelength emission. 1.1-1.2μm emission by GaInAs QWs, 1.2-1.4μm by GaInNAs QWs, and 1.4-1.5μm by GaInAsSb QDs were observed from photoluminescence measurement of grown crystals. These results indicate applicability of GaAs based material for long wavelength lasers. It was also found that GaInNAs QDs were effective in high-density dot formation which is advantageous for improving in the laser characteristics. The edge emitting lasers are grown and fabricated using highly strained GaInAs and GaInNAs QWs and the lasing at 1.2μm and 1.4μm, respectively were observed. In addition, a 1.13μm wavelength VCSEL was fabricated by highly strained GaInAs QWs. The VCSEL was operated under high temperature and the long-distance high-speed tr'ansmission experiment was demonstrated. These initial lasing performances suggest applicability of GaAs based long wavelength material to the high performance VCSELS. Although, the VCSEL beyond 1.2μm of wavelength is not realized, 1.1-1.5μm VCSELS on GaAs will be achieved by improving emission efficiency of crystals by optimization of growth conditions.

下一代短距离光波网络和光局域网需要低成本和高性能的激光器。垂直腔面发射激光器（VCSEL）是一种重要的光源，波长为1.1-1.6μm的VCSEL适用于光纤系统。为了实现长波长VCSEL的长波长发射，本研究采用CBE、MBE和MOCVD外延技术生长了高应变GaInAs量子阱（QW）、GaInNAs量子阱、GaInNAs量子点（QD）和GaInAsSb量子点。通过对生长的晶体的光致发光测量，观察到GaInAs量子阱的1.1-1.2μm、GaInNAs量子阱的1.2-1.4μm和GaInAsSb量子点的1.4-1.5μm发射。这些结果表明GaAs基材料可用于长波长激光器。还发现GaInNAs QD在高密度点形成中是有效的，这有利于提高激光器特性。用高应变GaInAs和GaInNAs量子阱生长并制备了边发射激光器，分别观察到1.2μm和1.4μm的激光输出。此外，利用高应变GaInAs量子阱制备了波长为1.13μm的垂直腔面发射激光器。在高温下运行了垂直腔面发射激光器，并进行了长距离高速传输实验。这些初始激光性能表明GaAs基长波长材料适用于高性能VCSELS。虽然目前还没有实现1.2μm以上波长的VCSEL，但通过优化生长条件，提高晶体的发光效率，有望实现1.1-1.5μm的GaAs VCSEL。