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Development of vacuum-ultraviolet photo-induced cleaning device by use of a rare-gas excimer lamp

稀有气体准分子灯真空紫外光致清洗装置的研制

基本信息

批准号：
13555202
负责人：
KUBODERA Shoichi
金额：
$ 7.49万
依托单位：
University of Miyazaki
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555202/
关键词：
Rare gas excimers Vacuum ultraviolet Photo-chemical process Photo-induced cleaning Optical field induced ionization Vacuum ultraviolet lamp Coherent vacuum ultraviolet emission Surface alteration 光化学反応エキシマランプ表面反応ドライプロセス光還元

项目摘要

Main objective of this research was the development of a photo-induced cleaning device by use of a vacuum ultraviolet (VUV) rare gas excimer lamp. I have made the following accomplishments during last three-year research term.[1]Development of high-power raregas excimer lamps : This is a heart of present research. By optimizing the electrode configuration and power supply of a rare gas excimer lamp device, I have obtained an output power density of more than 1 mW/cm^2 126 nm, which is a champion data at such a short wavelength emission source. I was also successful to simplify vacuum handling system for the device.[2]Super dry, process : By use of the device developed in [1], I was successful to make a photo-induced etching of an oxidized layer on a silicon wafer without using any reactive gases. This device was also useful to make photo-induced cleaning of metal-coated. optics and surface alteration of various polymers.[3]VUV F2 lamp : In addition to the Ar2* excimer lamp at 126 nm, I … More have studied an F2 lamp at 157 nm. In spite of reactive nature of the F2, stable long-term operation was made possible by optimizing gas handling and impurity analysis.[4]Dry process : To increase the etching process rate, I have used a reactive gas for the oxidized layer etching. By use of this gas, the rate increased more than one order of magnitude, which would give this method reality.[5]Development of coherent VIJY emission source : As described above, the photo-induced process by use of incoherent lamps is very effective, but inevitably slow. High-power VUV light source would increase the rate orders of magnitude. I have thus developed a high-power coherent 126 nm emission by use of electrons produced by optical field induced ionization process. I. observed a small-signal gain coefficient of 0.05/cm for the first time.[6]Production of a photo-induced cleaning device : Based on the above scientific and engineering knowledge, I have designed a compact photo-induced cleaning device. With a help of a venture company originated from University of Miyazaki (Nano Tech Photon Corp.), a design became a real device. Less

本研究的主要目的是利用真空紫外线（VUV）稀有气体准分子灯开发光致清洁装置。在过去三年的研究期间，我取得了以下成绩：b[1]大功率稀有气体准分子灯的研制：这是当前研究的核心。通过对稀有气体准分子灯器件的电极配置和电源进行优化，我获得了超过1 mW/cm^2 126 nm的输出功率密度，这是在这种短波长的发射源中获得的冠军数据。我还成功地简化了真空处理系统的设备。超干燥工艺：利用[1]开发的装置，我成功地在硅片上进行了氧化层的光致蚀刻，而不使用任何反应气体。该装置也可用于金属涂层的光诱导清洗。各种聚合物的光学和表面变化。[3]VUV F2灯：除126nm的Ar2*准分子灯外，还研究了157nm的F2灯。尽管F2具有反应性，但通过优化气体处理和杂质分析，可以实现稳定的长期运行。[4]干法：为了提高蚀刻工艺速度，我使用了反应气体进行氧化层蚀刻。通过使用这种气体，速率提高了一个数量级以上，这将使该方法成为现实。相干VIJY发射源的开发：如上所述，使用非相干灯的光诱导过程非常有效，但不可避免地很慢。大功率VUV光源可使速率提高几个数量级。因此，我利用光场诱导电离过程产生的电子，开发了一种高功率的126nm相干发射。第一次观察到小信号增益系数为0.05/cm。[6]光致清洁装置的制作：基于以上的科学和工程知识，我设计了一个紧凑的光致清洁装置。在来自宫崎大学的风险投资公司（纳米科技光子公司）的帮助下，一个设计变成了一个真正的设备。少