Self assembly of quantum dot and application to electron device using bio-nano process

生物纳米工艺量子点自组装及其在电子器件中的应用

• 批准号: 15360191
• 负责人: FUYUKI Takashi
• 金额: $ 9.66万
• 依托单位: Nara Institute of Science and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15360191/
• 关键词: Bio-nano process; self assemble; bottom-up; bio-mineralization; Quntum dot; floating gate transistor; フェリチンタンパク; フローティグゲートトランジスタ

Si nano-crystal dot is investigated for the wide usage of quantum device. The feature of the Si nano-crystal dot is the compatibility with the conventional Si process and their simple fabrication techniques. As the most promising application of the Si nano-crystal dot, floating gate memory is proposed in several works. It is reported that the Si dot is applicable to the memory devices. The feature of the nano-crystal dot memory is their extreme high reliability to the tunnel oxide breakdown. Even if the oxide is broken down locally, this does not lead to the failure of whole device performance.In this work, we propose a new deposition technique using side-wall typed plasma-enhanced CVD(PECVD). This method provides Si nano-crystal morphology at low temperature (430℃) and the damage of tunnel oxide was lower than parallel plate typed CVD. We have successfully developed the Si nano-crystal dot fabricated by PECVD for the first time. We have fabricated a floating gate memory using Si nano-crystal dot employing the CVD technique at low temperature. In order to analyze the electron behavior, we employed the thin tunnel oxide with a thickness of 3 nm. We have successfully confirmed the charging and discharging effect in the dot of n-channel metal-oxide-semiconductor-field effect transistor (MOSFET).Furthermore, we proposed to use the core of ferritin protein as floating gate. Initially, the core is ferric oxide, therefore, reduction of the core is necessary. We investigate the reduction method of the core to conductive by embedding the core in the amorphous silicon. XPS signal revealed that the core was successfully changed from Fe2O3 to Fe.This study provides the new technique for fabricating new memory device in the future.

硅纳米晶点作为量子器件的一个重要应用材料，受到人们的广泛关注。硅纳米晶点的特点是与传统硅工艺兼容，且制作工艺简单。浮栅存储器作为硅纳米晶点最有应用前景的器件，在多项研究中被提出。据报道，Si点可应用于存储器件。纳米晶体点存储器的特点是其对隧道氧化物击穿的极高可靠性。即使氧化层被局部击穿，也不会导致整个器件性能的下降。在这项工作中，我们提出了一种新的沉积技术，使用侧壁型等离子体增强CVD（PECVD）。该方法在低温（430℃）下获得了硅纳米晶形貌，隧道氧化层的损伤低于平行板式CVD。我们首次成功地研制出了用PECVD法制备的硅纳米晶点。我们采用CVD技术在低温下制作了一种硅纳米晶点浮栅存储器。为了分析电子行为，我们采用了厚度为3 nm的薄隧道氧化物。我们成功地证实了n沟道金属氧化物半导体场效应晶体管（MOSFET）的点内充放电效应，并提出了用铁蛋白质核作为浮栅。最初，核心是氧化铁，因此，核心的还原是必要的。我们研究了通过将芯嵌入非晶硅中来将芯还原为导电的方法。XPS信号显示，芯层由Fe_2O_3成功转变为Fe，为今后新型存储器件的制备提供了新的技术手段。

项目成果

Siナノドットメモリにおけるート酸化膜厚依存性

硅纳米点存储器中氧化膜厚度的依赖性

• 发表时间: 2005
• 期刊: 第50回応用物理学関係連合講演会 1a-P6-19
• 作者: P.Punchaipetch;市川和典;矢野裕司;畑山智亮;浦岡行治;冬木隆;高橋英治;林司
• 通讯作者: 林司

Si-Wall電極型PECVDによるSiナノドットにおける充放電特性評価

使用Si-Wall电极型PECVD评估Si纳米点的充放电特性

• 发表时间: 2004
• 期刊: 第65回応用物理学関係連合講演会 1a-L-lO
• 作者: 市川和典;P.Punchaipetch;矢野裕司;畑山智亮;浦岡行治;冬木隆;高橋英治;林司
• 通讯作者: 林司

Si nano-crystal dot memory fabricated by Side-wall Typed PECVD

侧壁式PECVD制备硅纳米晶点存储器

• 发表时间: 2004
• 期刊: Technical Report of IEICE SDM2004-206
• 作者: Kazunori Ichikawa;Masato Mukai;P.Punchaipetch;Hiroshi Yano;Tomoaki Hatayama;Yukiharu Uraoka;Takashi Fuyuki;Eiji Takahashi;Tsukasa Hayashi;Kiyoshi Ogata
• 通讯作者: Kiyoshi Ogata

積層型Siナノドットフローティングゲートメモリにおける充放電特性評価

堆叠式硅纳米点浮栅存储器充放电特性评估

• 发表时间: 2005
• 期刊: 第50回応用物理学関係連合講演会 1a-P6-19
• 作者: 市川和典;P.Punchaipetch;矢野裕司;畑山智亮;浦岡行治;冬木隆;高橋英治;林司
• 通讯作者: 林司

Electron Injection into Si nano dot fabricated by Side-wall type plasma enhanced chemical vapor deposition

电子注入侧壁型等离子体增强化学气相沉积硅纳米点

• 发表时间: 2005
• 期刊: IEEE/International Meeting for Future Electron Devices, Kansai P-D7
• 作者: Kazunori Ichikawa;Masato Mukai;P.Punchaipetch;Hiroshi Yano;Tomoaki Hatayama;Yukiharu Uraoka;Takashi Fuyuki;Eiji Takahashi;Tsukasa Hayashi;Kiyoshi Ogata
• 通讯作者: Kiyoshi Ogata