Functional Designing and Development of Evaluation of Residual Stress in the Surface of Inorganic Materials
Functional Designing and Development of Evaluation of Residual Stress in the Surface of Inorganic Materials
批准号:
15360347
负责人:
ABE Hiroshi
金额:
$9.86万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004
中文摘要
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英文摘要
1 Evaluation of residual stress of various materialsThe range of distance in which the residual stress was observed was larger for single crystal SiC than for glass (Na-Ca-Si-O) at the primary load of 19.6N. The distance was 200μm for SiC and 300μm for glass, respectively. It was also found that the residual stress in SiC was several times larger than that in glass at an equivalent distance. The load at equivalent distance was 165MPa in SiC and 40MPa in glass, respectively.2 The change of residual stress after heat treatmentIn Si-Al-Li-O system glass, the residual stress was reduced by heat treatment and became zero near the strain point of 530℃. The residual stress curve of the crystallized glass shifted to high temperature side by about 100℃. In single crystal SiC, the residual stress started to decrease at about 800℃ and became zero at the heat treatment of 1400℃, 2hrs. The residual stress curve of polycrystalline SiC shifted a little to low temperature side.3 Analysis of materials and discussionThe reduction of residual stress by heat treatment was observed in all materials and was accompanied with three dimensional shape of the indentation. MD simulation of the diffusion of ions showed that some ions such as Ti^<4+> had intermittent movement. It is considered that the increase in heat resistance by crystallization was caused due to the suppression of viscous flow of glass owing to the crystal phase.TEM observation of single crystal SiC showed that basal slips along (0001) caused stacking faults and that the basal slip was prominent at the points close to the indentations and in the specimen which was heat treated at higher temperature. The heat resistance property which is important for semiconductor, optical and structural materials were in the order of SiC > crystallized glass > glass. The technique to evaluate residual stress can detect strain change and contribute to designing materials with high heat resistance and high functions.
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Atomic and Electronic Structure of <110> Symmetric Tilt Boundaries in Palladium
钯<110>对称倾斜边界的原子和电子结构
DOI:
--
发表时间:
2004
期刊:
Mater.Trans. 45・7
影响因子:
--
作者:
[A.LETO, G.PEZZOTTI, N.Takata et al.]
通讯作者:
N.Takata et al.
Grain Boundary Energy and Atomic Structure of <110> Symmetric Tilt Boundaries in Copper
铜<110>对称倾斜晶界的晶界能和原子结构
DOI:
--
发表时间:
2004
期刊:
J.Japan Inst.Metals 68-4
影响因子:
--
作者:
[N.Takata, K.Ikeda, F.Yoshida, H.Nakashima, H.Abe]
通讯作者:
H.Abe
H.Abe: "Toughness of Brittle Materials"Proc. of 2nd Fulrath Memorial International Symposium on Advanced Ceramics. 94-97 (2003)
H.Abe:“脆性材料的韧性”Proc。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Toughness of Brittle Materials
脆性材料的韧性
DOI:
--
发表时间:
2003
期刊:
Proc.of 2^<nd> Fulrath Memorial International Symposium on Advanced Ceramics
影响因子:
--
作者:
[G.Pezzotti, K.Nishikata, S.Kakinuma, T.Ohtomo, Y.Tamura, H.Abe]
通讯作者:
H.Abe
Evaluation of Surface Energy by Molecular Dynamics Simulation and Discussion about Cleavage Fracture in α-Al_2O_3
分子动力学模拟评价表面能及α-Al_2O_3解理断裂的讨论
DOI:
--
发表时间:
2004
期刊:
J.Ceram.Soc.Japan 112-1
影响因子:
--
作者:
[S.Takematsu, T.Mizuguchi, H.Nakashima, K.Ikeda, H.Abe]
通讯作者:
H.Abe
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