Study of local arrigments and ferromagnetism of dilute magnetic semiconductors of GaN systems by using XAFS method and XMCD.

利用XAFS方法和XMCD研究GaN系稀磁半导体的局域排列和铁磁性。

• 批准号: 15560007
• 负责人: EMURA Shuichi
• 金额: $ 2.3万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560007/
• 关键词: Spintronics; Dilute magnetic semiconductors; Nitride semiconductor; Photoluminescence; Rare earthes; Ferromagnetism; XAFS; Structural solid state physica; 稀薄磁性半導体; XMCD; GaN; ワイドギャップ半導体; 希土類元素; 遷移金属元素

We investigated on the local circumstances and ferromagnetism of GaN doped Cr and Gd elements by using XAFS method and XMCD. We found the local structure around Cr in GaN that the Cr atom is substituted on Ga atom until 4% of the Cr concentration. In deep doping over 4%, Cr atoms construct a CrN structure in GaN. Our GaN : Cr showed two phases of hexagonal and cubic structures from the first nearest neighbor analysis around Cr atoms. GaGdN with 6% concentration of Gd atoms also showed the substitutional arraignment on Gd. We furthermore found a new luminescence in GaGdN at 652nm, which is tentatively assigned to f-f transition of divalent Gd ions.

我们利用XAFS方法和XMCD研究了GaN掺杂Cr和Gd元素的局部情况和铁磁性。我们发现GaN中Cr周围的局域结构是Cr原子取代Ga原子直到Cr浓度达到4%。当深掺杂超过 4% 时，Cr 原子在 GaN 中构建 CrN 结构。根据 Cr 原子周围的第一次最近邻分析，我们的 GaN : Cr 显示出六方和立方结构的两个相。 Gd原子浓度为6%的GaGdN也显示出Gd上的置换排列。我们还发现了 GaGdN 中 652 nm 处的新发光，暂时将其归因于二价 Gd 离子的 f-f 跃迁。

项目成果

Emission Spectra from AIN and GaN Doped with Rare Earth Elements

掺杂稀土元素的 AIN 和 GaN 的发射光谱

• 期刊: J.Alloys and Compounds (In press)
• 作者: M.S.Choi;S.Emura;S.Kimura;M.S.Kim;Y.K.Zhou;N.Teraguchi;A.Suzuki;A.Yanase;H.Asahi
• 通讯作者: H.Asahi

Optical Properties of GaN-based Magnetic Semiconductors.

GaN 基磁性半导体的光学特性。

• 发表时间: 2004
• 期刊: J.Phys.:Condens.Matter 16(48)
• 作者: Y.K.Zhou;M.S.Kim;X.J.Li;Shigeya Kimura;Akio Kaneta;Youichi Kawakami;Sg.Fujita;Shuichi Emura;Shigehiko Hasegawa;Hajime Asahi
• 通讯作者: Hajime Asahi

Emission Spectra from AlN and GaN Doped Rare Earth Elements

AlN 和 GaN 掺杂稀土元素的发射光谱

• 发表时间: 2005
• 期刊: Journal of Alloys and Compounds. (In press)
• 作者: Sung Woo Choi;Shuichi Emura;Shigeya Kimura;Moo Seong Kim;YiKai Zhou;Nobuaki Teraguchi;Akira Suzuki;Akira Yanase;Hajime Asahi.
• 通讯作者: Hajime Asahi.

Local Structural Change in GaCrN Grown by Radio Frequency Plasma-Assisted MolecularBbeam Epitaxy

射频等离子体辅助分子束外延生长 GaCrN 的局部结构变化

• 发表时间: 2004
• 期刊: J.Cryst.Growth 273
• 作者: Masahiko Hashimoto;Hiroyuki Tanaka;Shuichi Emura;M.S.Kim;Tetsuya Honma;Norimasa Umesaki;Y.K.Zhou;S.Hasegawa;H.Asahi
• 通讯作者: H.Asahi

Optical Properties of GaN-based Magnetic Semiconductors

GaN基磁性半导体的光学特性

• 发表时间: 2004
• 期刊: J.Phys.: Condens.Matter. 16(48)
• 作者: K.Zhou;M.S.Kim;X.J.Li;Shigeya Kimura;Akio Kaneta;Youichi Kawakami;Sg.Fujita;Shuichi Emura;Shigehiko Hasegawa;Hajime Asahi
• 通讯作者: Hajime Asahi