Visible electroluminescence device by MOS structure with Si-implanted SiO_2

硅注入SiO_2 MOS结构可见光电致发光器件

基本信息

批准号：
15560280
负责人：
MATSUDA Toshihiro
金额：
$ 1.09万
依托单位：
Toyama Prefectural University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560280/
关键词：
Ion implantation MOS capacitor Lieht emission Electroluminescence Ion beam sputtering Transparent electrode

项目摘要

Microdisplays become important in imaging, consumer, entertainment and data-graphic applications, such as camera viewfinders, head-mounted displays. A superior process compatibility with Si LSI makes Si-based light emitting devices attractive for the integrated intelligent displays in portable systems. Electroluminescence (EL) spectra under direct-current (dc) operation were studied for MOS capacitors with 50 nm Si-implanted SiO_2.The dc-EL intensity became about 50-70 times larger than the unimplanted MOS capacitor at the same current levels. Hysteresis curves in capacitance vs. gate voltage (C-V) characteristics were also observed for Si implanted capacitors. It suggests that the traps generated by Si-implantation cause the light emission. The ac-EL intensity was enhanced as the pulse frequency became higher in the frequency range from 10 Hz to 100 kHz. The longer components of the spectra were dominant.EL spectra under direct-current (dc) operation are reported for Au/SiO_2/p-Si MOS capacitors with 50 nm Si-implanted SiO_2. The Au film of 15 nm thick is transparent at 300 nm or longer wavelength and has the resistivity of 3 μΩcm. The transparent Au gate not only improves measurable wavelength range but also suppresses interference effects among MOS layers. The clear and smooth EL spectra were measured and the blue light emission was observed. The EL spectrum was analyzed by fitting five Gaussian distribution functions, i.e. hv=1.2, 1.6, 1.9, 2.4, 2.8 eV. These energy levels are related to the traps in Si-implanted SiO_2 A model of EL emission mechanism is proposed for the Si-implanted MOS EL device.

微型播放在成像，消费者，娱乐和数据图形应用程序中变得很重要，例如摄像头视图，头部安装的显示器。与SI LSI的卓越过程兼容性使基于SI的光发射设备对便携式系统中的集成智能显示器有吸引力。直接电流（DC）下的电致发光（EL）光谱是针对具有50 nm Si-Emplants sio_2的MOS电容器的研究。DC-EL强度在同一电流水平下的DC-EL强度比未植入的MOS电容器大约50-70倍。对于SI植入的电容器，还观察到电容与栅极电压（C-V）特性的磁滞曲线。这表明由Si植入产生的陷阱会导致光发射。随着脉冲频率在10 Hz至100 kHz的频率范围内变得更高，AC-EL强度得到了增强。据报道，在直接电流（DC）操作下，对于Au/siO_2/p-Si MOS电容器，具有50 nm Si-Implant的SIO_2的AU/SIO_2/P-SI MOS电容器，较长的组件是显性的。 15 nm厚的AU膜在300 nm或更长的波长下透明，电阻为3μCM。透明的AU门不仅改善了可测量的波长范围，还可以抑制MOS层之间的干扰效应。测量清晰和光滑的EL光谱，并通过拟合五个高斯分布函数，即HV = 1.2、1.6、1.9、2.4、2.8 eV分析EL光谱。这些能级与Si植入的SIO_2中的陷阱有关，提出了EL发射机制的模型，用于Si-Implant的MOS EL设备。