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Visible electroluminescence device by MOS structure with Si-implanted SiO_2

硅注入SiO_2 MOS结构可见光电致发光器件

基本信息

批准号：
15560280
负责人：
MATSUDA Toshihiro
金额：
$ 1.09万
依托单位：
Toyama Prefectural University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560280/
关键词：
Ion implantation MOS capacitor Lieht emission Electroluminescence Ion beam sputtering Transparent electrode

项目摘要

Microdisplays become important in imaging, consumer, entertainment and data-graphic applications, such as camera viewfinders, head-mounted displays. A superior process compatibility with Si LSI makes Si-based light emitting devices attractive for the integrated intelligent displays in portable systems. Electroluminescence (EL) spectra under direct-current (dc) operation were studied for MOS capacitors with 50 nm Si-implanted SiO_2.The dc-EL intensity became about 50-70 times larger than the unimplanted MOS capacitor at the same current levels. Hysteresis curves in capacitance vs. gate voltage (C-V) characteristics were also observed for Si implanted capacitors. It suggests that the traps generated by Si-implantation cause the light emission. The ac-EL intensity was enhanced as the pulse frequency became higher in the frequency range from 10 Hz to 100 kHz. The longer components of the spectra were dominant.EL spectra under direct-current (dc) operation are reported for Au/SiO_2/p-Si MOS capacitors with 50 nm Si-implanted SiO_2. The Au film of 15 nm thick is transparent at 300 nm or longer wavelength and has the resistivity of 3 μΩcm. The transparent Au gate not only improves measurable wavelength range but also suppresses interference effects among MOS layers. The clear and smooth EL spectra were measured and the blue light emission was observed. The EL spectrum was analyzed by fitting five Gaussian distribution functions, i.e. hv=1.2, 1.6, 1.9, 2.4, 2.8 eV. These energy levels are related to the traps in Si-implanted SiO_2 A model of EL emission mechanism is proposed for the Si-implanted MOS EL device.

微显示器在成像、消费、娱乐和数据图形应用中变得非常重要，例如相机取景器、头戴式显示器。硅基大规模集成电路优越的工艺兼容性使得硅基发光器件对便携式系统中的集成智能显示器具有吸引力。研究了50 nm si注入SiO_2的MOS电容器在直流工作下的电致发光光谱。在相同的电流水平下，直流发光强度比未植入的MOS电容器大50-70倍。此外，还观察到硅植入电容器的电容与栅电压（C-V）特性的滞后曲线。结果表明，硅注入产生的陷阱是导致光发射的原因。在10hz ~ 100khz范围内，脉冲频率越高，交流- el强度越强。光谱中较长的分量占主导地位。本文报道了Au/SiO_2/p-Si MOS电容器在50 nm si注入SiO_2的直流工作下的EL光谱。15nm厚的Au膜在300nm或更长的波长是透明的，其电阻率为3 μΩcm。透明金栅不仅提高了可测波长范围，而且抑制了MOS层间的干扰效应。测量了清晰光滑的EL光谱，并观察了蓝光发射。通过拟合hv=1.2、1.6、1.9、2.4、2.8 eV的5个高斯分布函数对光谱进行分析。这些能级与硅注入SiO_2中的陷阱有关。本文提出了硅注入MOS电致发光器件的电致发光机理模型。