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Visible electroluminescence device by MOS structure with Si-implanted SiO_2

硅注入SiO_2 MOS结构可见光电致发光器件

基本信息

批准号：
15560280
负责人：
MATSUDA Toshihiro
金额：
$ 1.09万
依托单位：
Toyama Prefectural University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560280/
关键词：
Ion implantation MOS capacitor Lieht emission Electroluminescence Ion beam sputtering Transparent electrode

项目摘要

Microdisplays become important in imaging, consumer, entertainment and data-graphic applications, such as camera viewfinders, head-mounted displays. A superior process compatibility with Si LSI makes Si-based light emitting devices attractive for the integrated intelligent displays in portable systems. Electroluminescence (EL) spectra under direct-current (dc) operation were studied for MOS capacitors with 50 nm Si-implanted SiO_2.The dc-EL intensity became about 50-70 times larger than the unimplanted MOS capacitor at the same current levels. Hysteresis curves in capacitance vs. gate voltage (C-V) characteristics were also observed for Si implanted capacitors. It suggests that the traps generated by Si-implantation cause the light emission. The ac-EL intensity was enhanced as the pulse frequency became higher in the frequency range from 10 Hz to 100 kHz. The longer components of the spectra were dominant.EL spectra under direct-current (dc) operation are reported for Au/SiO_2/p-Si MOS capacitors with 50 nm Si-implanted SiO_2. The Au film of 15 nm thick is transparent at 300 nm or longer wavelength and has the resistivity of 3 μΩcm. The transparent Au gate not only improves measurable wavelength range but also suppresses interference effects among MOS layers. The clear and smooth EL spectra were measured and the blue light emission was observed. The EL spectrum was analyzed by fitting five Gaussian distribution functions, i.e. hv=1.2, 1.6, 1.9, 2.4, 2.8 eV. These energy levels are related to the traps in Si-implanted SiO_2 A model of EL emission mechanism is proposed for the Si-implanted MOS EL device.

微显示器在成像、消费、娱乐和数据图形应用中变得非常重要，例如相机取景器、头戴式显示器。与 Si LSI 的卓越工艺兼容性使得硅基发光器件对于便携式系统中的集成智能显示器具有吸引力。研究了50 nm Si注入SiO_2 MOS电容器在直流（dc）操作下的电致发光（EL）光谱。在相同电流水平下，dc-EL强度比未注入MOS电容器大约50-70倍。对于硅注入电容器，还观察到电容与栅极电压 (C-V) 特性的滞后曲线。这表明硅注入产生的陷阱导致了光发射。在 10 Hz 至 100 kHz 的频率范围内，随着脉冲频率变高，ac-EL 强度增强。光谱中较长的成分占主导地位。报告了具有 50 nm Si 注入 SiO_2 的 Au/SiO_2/p-Si MOS 电容器在直流 (dc) 操作下的 EL 光谱。 15nm厚的Au膜在300nm以上的波长下是透明的，电阻率为3μΩcm。透明Au栅极不仅提高了可测量的波长范围，而且还抑制了MOS层之间的干扰效应。测量了清晰平滑的EL光谱并观察到蓝光发射。通过拟合五个高斯分布函数来分析EL光谱，即hv=1.2、1.6、1.9、2.4、2.8 eV。这些能级与Si注入的SiO_2中的陷阱有关。针对Si注入的MOS EL器件提出了EL发射机制的模型。