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Blue electroluminescence device by MOS structure with Si-implanted SiO_2

硅注入SiO_2 MOS结构蓝色电致发光器件

基本信息

批准号：
17560289
负责人：
MATSUDA Toshihiro
金额：
$ 1.73万
依托单位：
Toyama Prefectural University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560289/
关键词：
Ion implantation MOS capacitor Light emission Electroluminescence Ion beam sputtering Transparent electrode

项目摘要

Since silicon is the most important material for very large scale integrated circuits (VLSI), superior process compatibility with Si VLSI makes Si-based light emitting devices attractive for the wide variety of application of integrated intelligent displays. Blue electroluminescence (EL) devices by MOS structure with Si-implanted Si0_2 were studied. MOS structures of which gate oxide had excess Si in SiO_2 were fabricated on p- or n-type Si substrates with Au/ITO electrodes. In addition to implantation, Si ion doping technique was used to introduce excess Si into the gate oxide. Electric and EL characteristics of the devices were analyzed.Test devices with higher Si dose gave larger current in large V_G region regardless of the type of Si substrate. Capacitance vs. gate voltage (C-V) characteristics showed hysteresis curves. It suggests that charges in the traps induced by Si-implantation are altered with the polarity of applied voltages. MOS structures with Si ion doped oxide did not give hysteresis curves. The damaged surfaces of Si substrates, which were observed by cross section TEM, caused large leakage current. SIMS analysis suggests that the amount of light ion species such as SiF_<3^+> and SiF_<2^+> was more than the expected, resulting in deeper ion profile.EL spectra under direct-current (dc) operation showed a peak at 450 nm in MOS structures with Si-implanted SiO_2 of both Si substrate types. EL spectra of MOS structures with either substrate type can be separated into 5 components i.e.hv=1.0,1.6,1.9,2.4,2.8 eV. A model of EL emission mechanism is proposed for the Si-implanted MOS EL device. EL spectra under alternating current (ac) operation have the same components as dc-EL. The lower photon energy components of EL spectra become larger in ac operation. It can be interpreted as the difference of response speed of trap levels induced into the gate oxide by ion implantation.

由于硅是超大规模集成电路（VLSI）最重要的材料，与硅超大规模集成电路的卓越工艺兼容性使得硅基发光器件对于集成智能显示器的广泛应用具有吸引力。研究了硅注入SiO_2 MOS结构的蓝色电致发光(EL)器件。在具有Au/ITO电极的p型或n型Si衬底上制作了栅极氧化物在SiO_2中含有过量Si的MOS结构。除了注入之外，还使用硅离子掺杂技术将过量的硅引入栅极氧化物中。分析了器件的电学和EL特性。无论Si衬底的类型如何，具有较高Si剂量的测试器件在大V_G区域中给出较大的电流。电容与栅极电压 (C-V) 特性呈现迟滞曲线。这表明硅注入引起的陷阱中的电荷随着施加电压的极性而改变。具有硅离子掺杂氧化物的 MOS 结构没有给出磁滞曲线。通过截面TEM观察发现，Si衬底表面的损伤导致了较大的漏电流。 SIMS分析表明，SiF_<3^+>和SiF_<2^+>等轻离子种类的数量比预期多，导致离子轮廓更深。直流（dc）操作下的EL光谱显示，两种Si衬底类型的硅注入SiO_2的MOS结构在450 nm处有峰值。具有任一衬底类型的 MOS 结构的 EL 光谱可以分为 5 个分量，即 hv=1.0、1.6、1.9、2.4、2.8 eV。提出了硅注入 MOS EL 器件的 EL 发射机制模型。交流电 (ac) 操作下的 EL 光谱与 dc-EL 具有相同的成分。 EL 光谱的较低光子能量分量在交流操作中变得更大。它可以解释为通过离子注入引入栅极氧化物中的陷阱能级的响应速度的差异。