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Blue electroluminescence device by MOS structure with Si-implanted SiO_2

硅注入SiO_2 MOS结构蓝色电致发光器件

基本信息

批准号：
17560289
负责人：
MATSUDA Toshihiro
金额：
$ 1.73万
依托单位：
Toyama Prefectural University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560289/
关键词：
Ion implantation MOS capacitor Light emission Electroluminescence Ion beam sputtering Transparent electrode

项目摘要

Since silicon is the most important material for very large scale integrated circuits (VLSI), superior process compatibility with Si VLSI makes Si-based light emitting devices attractive for the wide variety of application of integrated intelligent displays. Blue electroluminescence (EL) devices by MOS structure with Si-implanted Si0_2 were studied. MOS structures of which gate oxide had excess Si in SiO_2 were fabricated on p- or n-type Si substrates with Au/ITO electrodes. In addition to implantation, Si ion doping technique was used to introduce excess Si into the gate oxide. Electric and EL characteristics of the devices were analyzed.Test devices with higher Si dose gave larger current in large V_G region regardless of the type of Si substrate. Capacitance vs. gate voltage (C-V) characteristics showed hysteresis curves. It suggests that charges in the traps induced by Si-implantation are altered with the polarity of applied voltages. MOS structures with Si ion doped oxide did not give hysteresis curves. The damaged surfaces of Si substrates, which were observed by cross section TEM, caused large leakage current. SIMS analysis suggests that the amount of light ion species such as SiF_<3^+> and SiF_<2^+> was more than the expected, resulting in deeper ion profile.EL spectra under direct-current (dc) operation showed a peak at 450 nm in MOS structures with Si-implanted SiO_2 of both Si substrate types. EL spectra of MOS structures with either substrate type can be separated into 5 components i.e.hv=1.0,1.6,1.9,2.4,2.8 eV. A model of EL emission mechanism is proposed for the Si-implanted MOS EL device. EL spectra under alternating current (ac) operation have the same components as dc-EL. The lower photon energy components of EL spectra become larger in ac operation. It can be interpreted as the difference of response speed of trap levels induced into the gate oxide by ion implantation.

由于硅是用于超大规模集成电路（VLSI）的最重要的材料，与Si VLSI的上级工艺兼容性使得Si基发光器件对于集成智能显示器的广泛应用具有吸引力。研究了Si注入SiO_2的MOS结构蓝光电致发光器件。用Au/ITO电极在p型或n型Si衬底上制作了栅氧化层中SiO_2中含有过剩Si的MOS结构。除了注入之外，还使用Si离子掺杂技术将过量的Si引入栅氧化层。分析了器件的电学特性和电致发光特性，结果表明，无论Si衬底类型如何，Si剂量越大，器件在大V_G区的电流越大。电容-栅压（C-V）特性曲线显示出迟滞特性。结果表明，硅离子注入引起的陷阱中的电荷随外加电压的极性而改变。硅离子掺杂氧化物的MOS结构没有给出磁滞曲线。通过横截面TEM观察到硅衬底表面的损伤，导致了较大的漏电流。西姆斯分析表明，注入SiO_2的MOS结构中SiF_（3^+）和SiF_（2^+）等轻离子种类的数量比预期的要多，导致离子分布更深.两种衬底类型MOS结构的电致发光谱可分为hv= 1.0，1.6，1.9，2.4，2.8eV五个分量。本文提出了注硅MOS电致发光器件的电致发光机理模型。在交流（ac）操作下的EL光谱具有与dc-EL相同的分量。交流工作时，EL谱的低光子能量分量变大。这可以解释为离子注入引起的栅氧化层陷阱能级响应速度的差异。