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Blue electroluminescence device by MOS structure with Si-implanted SiO_2

硅注入SiO_2 MOS结构蓝色电致发光器件

基本信息

批准号：
17560289
负责人：
MATSUDA Toshihiro
金额：
$ 1.73万
依托单位：
Toyama Prefectural University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560289/
关键词：
Ion implantation MOS capacitor Light emission Electroluminescence Ion beam sputtering Transparent electrode

项目摘要

Since silicon is the most important material for very large scale integrated circuits (VLSI), superior process compatibility with Si VLSI makes Si-based light emitting devices attractive for the wide variety of application of integrated intelligent displays. Blue electroluminescence (EL) devices by MOS structure with Si-implanted Si0_2 were studied. MOS structures of which gate oxide had excess Si in SiO_2 were fabricated on p- or n-type Si substrates with Au/ITO electrodes. In addition to implantation, Si ion doping technique was used to introduce excess Si into the gate oxide. Electric and EL characteristics of the devices were analyzed.Test devices with higher Si dose gave larger current in large V_G region regardless of the type of Si substrate. Capacitance vs. gate voltage (C-V) characteristics showed hysteresis curves. It suggests that charges in the traps induced by Si-implantation are altered with the polarity of applied voltages. MOS structures with Si ion doped oxide did not give hysteresis curves. The damaged surfaces of Si substrates, which were observed by cross section TEM, caused large leakage current. SIMS analysis suggests that the amount of light ion species such as SiF_<3^+> and SiF_<2^+> was more than the expected, resulting in deeper ion profile.EL spectra under direct-current (dc) operation showed a peak at 450 nm in MOS structures with Si-implanted SiO_2 of both Si substrate types. EL spectra of MOS structures with either substrate type can be separated into 5 components i.e.hv=1.0,1.6,1.9,2.4,2.8 eV. A model of EL emission mechanism is proposed for the Si-implanted MOS EL device. EL spectra under alternating current (ac) operation have the same components as dc-EL. The lower photon energy components of EL spectra become larger in ac operation. It can be interpreted as the difference of response speed of trap levels induced into the gate oxide by ion implantation.

由于硅是超大规模集成电路(VLSI)最重要的材料，与硅VLSI的工艺兼容性使硅基发光器件在集成智能显示器的广泛应用中具有吸引力。研究了硅注入SiO_2的MOS结构的蓝色电致发光器件。采用Au/ITO电极在p型或n型硅衬底上制备了SiO_2中栅氧化层过剩的MOS结构。除了注入外，还使用了硅离子掺杂技术将多余的硅引入栅氧化物中。对器件的电学和电致发光特性进行了分析，无论衬底类型如何，硅剂量越大的测试器件在较大的V_G区电流越大。电容-栅压(C-V)特性表现出滞后曲线。这表明，硅注入引起的陷阱中的电荷随外加电压的极性而变化。掺硅氧化物的MOS结构没有给出磁滞曲线。横截面电子显微镜观察发现，硅衬底表面的损伤导致了较大的漏电流。SIMS分析表明，SiF_&lt；3^+&gt；和SiF_&lt；2^+&gt；等轻离子物种的数量超过了预期，导致了更深的离子分布。直流(DC)操作下的EL谱显示，两种硅衬底类型的Si注入SiO_2的MOS结构在450 nm处有一个峰值。任一衬底类型的MOS结构的电致发光光谱可分为5个分量，即Hv=1.0，1.6，1.9，2.4，2.8 eV。建立了硅注入MOS电致发光器件的电致发光机理模型。交流(AC)工作下的电致发光光谱与直流电致发光具有相同的成分。在交流工作时，电致发光光谱的低光子能量分量变大。这可以解释为离子注入引起栅氧化层陷阱能级响应速度的差异。