Studies on effects of pulse-light irradiation on InGaAsN crystal growth for super high efficiency solar cells

脉冲光照射对超高效太阳能电池InGaAsN晶体生长影响的研究

• 批准号: 15560283
• 负责人: OHSHITA Yoshio
• 金额: $ 2.37万
• 依托单位: TOYOTA TECHNOLOGICAL INSTITUTE
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560283/
• 关键词: CVD; SOLAR CELL; COMPOUND SEMICONDUCTOR

III-V compound multi-junction (MJ) tandem solar cells have attracted a considerable attention in space and terrestrial applications due to the great potential for obtaining high conversion efficiency. The group-III arsenide nitride compound InGaAsN thin film is one of the candidates for the future solar cells, because it has a lattice constant matched with that of substrate Ge and has 1.0 eV band gap. To realize the good InGaAsN film, we have been developing chemical beam epitaxy (CBE) technique. In this work, to improve the electrical properties of the grown film, that is, to control the N concentration and to reduce the impurity concentration, we studied the effects of light irradiation during the growth on the film properties. First, we developed the new CBE system, where the pulse light can irradiate the growing surface at the same period of the source gas supply. The N concentration in the grown film was increased and the C concentration was decreased by the light irradiation to the growing surface. These results suggested the possibilities of the control of surface reactions by the light irradiation.

III-V族化合物多结（MJ）串联太阳能电池由于获得高转换效率的巨大潜力而​​在太空和地面应用中引起了相当大的关注。 III族砷化物氮化物化合物InGaAsN薄膜是未来太阳能电池的候选材料之一，因为它具有与衬底Ge相匹配的晶格常数，并且具有1.0 eV的带隙。为了实现良好的InGaAsN薄膜，我们一直在开发化学束外延（CBE）技术。在这项工作中，为了提高生长薄膜的电性能，即控制N浓度并降低杂质浓度，我们研究了生长过程中光照射对薄膜性能的影响。首先，我们开发了新的CBE系统，脉冲光可以在源气体供应的同时照射生长表面。通过对生长表面的光照射，生长膜中的N浓度增加并且C浓度降低。这些结果表明通过光照射控制表面反应的可能性。

项目成果

Light illumination induced effects on GaAsN thin films grown by chemical beam epitaxy.

光照射对化学束外延生长的 GaAsN 薄膜产生影响。

• 发表时间: 2005
• 期刊: Proceedings of 2005 Dry Process International Symposium
• 作者: A.Yamamoto;D.Matsubayashi;S.Makiuchi;H.Tatsuoka et al.;H.S.Lee
• 通讯作者: H.S.Lee

「研究成果報告書概要(欧文)」より

摘自《研究结果报告摘要（欧洲）》

• 发表时间: 2006
• 期刊: Seibutsu Butsuri 46(1)
• 作者: Yasushi Shigeri;Keiko Shimamoto
• 通讯作者: Keiko Shimamoto

Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells

用于多结串联太阳能电池的 InGaAsN 薄膜的化学束外延

• 发表时间: 2005
• 期刊: Journal of Crystal Growth 275
• 作者: H.S.Lee;et al.
• 通讯作者: et al.