Microscopic Tunneling Theory

发展了通过微观和非经验数值模拟得到的尖端-表面系统电子态分析理论，从理论上阐明了原子尺度上的隧穿现象。Yamaguchi （Shizuoka Univ）从第一性原理出发，通过非经验计算得到了吸附在Si表面的富勒烯和有机分子的电子态，并了解了组成吸附-表面体系的单个原子的隧穿特性。Yoshimori （Okayama university of Sci.）利用共振隧道效应研究了金属表面准稳定激发He束的单重态-三重态跃迁、解吸激发和价态涨落的形成。东京大学的Tsukada教授提出了一种适用于强电场和强电流作用下的非平衡系统的第一性原理递推传递矩阵方法。他已经将其应用于各种尖端表面系统，例如Al尖端硅表面。此外，他还掌握了原子控制的基本机制，其中任何表面原子被提取，移动或提供。Kitahara（东京工业大学）研究了由倏逝光控制自旋的机制，并表明自旋状态是由激发态发出的自然荧光改变的。Makoshi （Himeji inist of technology）已经证明共振翻荡模型是理解扫描隧道显微镜和扫描隧道光谱的物理基础的有力模型。Kobayashi （Ochanomizu university）利用屏蔽杂质的库仑势，从理论上检验了半导体表面下块状杂质的扫描隧道显微镜图像，并澄清了实验中观察到的弗里德尔振荡的起源。

Developing the theory to analyze the electronic states of tip-surfae system which are obtained by microscopic and non-empirical numerical simulation, we have clarified theoretically the tunneling phenomena in the atomic scale.Yamaguchi (Shizuoka Univ.) has obtained the electronic states of fullerene and organic molecules adsorbed on Si surface by non-empirical calculation from the first principle, and got kowledge of tunnneling characteristics of individual atoms consisting of the adsorbate-surface system.Yoshimori (Okayama Univ.of Sci.) has examined the singlet-triplet transition, the desorption excitation, and the formation of valence fluctuation in the quasi-stably excited He beam on metal surfaces by the resonance tunneling effect.Tsukada (Tokyo Univ.) has developed the first-principle recursion-transfer matrix method which can be applied to the non-equilibrium system under the strong electric field and current. He has applied it to various tip-surface systems, for example, Al tip-Si surface. Furthermore, he has got knowledge of fundamental mechanism of the atom controle where any surface atom is extracted, moved, or supplied.Kitahara (Tokyo Inst.of Technol.) has examined the mechanism of spin-control by evanescent light, and showed that the spin state is changed by the natural fluorescence of light from the excited state.Makoshi (Himeji Inst.of Technol.) has shown that the resonant tummeling model is a powerful model to understand the basis of physics of the scanning tunneling microspope and scanning tunneling spectroscopy.Kobayashi (Ochanomizu Univ.) has theoretically examined, using the screened Coulomb potential of impurity, the image of scanning tunneling microscope of bulk impurities underneath the semiconductor surface, and clarified the origin of Friedel oscillation which is observed in the experiment.