Control of Anisotropy in Nanostructured Silicon by Linearly Polarized Light

纳米结构多孔硅样品在电化学刻蚀过程中受线偏振光照射后表现出光学各向异性。本研究项目旨在阐明各向异性的形成机理，并将其应用于新型光学器件。主要结果总结如下：1.折射率各向异性的观察几个研究小组根据光致发光线偏振度的研究结果，报道了多孔硅层的光学各向异性。在这个项目中，我们第一次观察到了显著的折射率各向异性。各向异性是这样的，即最大折射率出现在与最大线偏振程度相差90度的方向上。这可以通过假设大的硅结构导致折射率各向异性，而小的结构控制发光各向异性来解释。激发波长对鲁明…的影响更多的发光各向异性我们观察到发光各向异性很大程度上受激发波长的影响。我们的实验结果表明，这不是由于氧化物发光的影响，而是源于深度不均匀。红外激光辐照样品中强各向异性的实验观察和计算机模拟我们用一束强度较高的1.06-μ的m-Nd：YAG光作为照明源，获得了很强的发光各向异性。基于线性振子呈平面分布的二维模型的计算机模拟可以很好地再现这一结果。阳极氧化条件的影响我们已经证明，使用HF浓度降至0.1%的极稀HF溶液可以获得多孔硅发光样品。然而，在这些样品中没有观察到显著的发光各向异性，这意味着阳极氧化电流密度对各向异性的形成有很大的影响。较少

Nanostructured porous silicon samples exhibit optical anisotropy after being irradiated with linearly polarized light while they are etched electrochemically. This research project aims at clarifying the mechanism for the formation of anisotropy and applying this to novel optical devices. Major results are summarized as follows:1. Observation of anisotropy in refractive indicesThe optical anisotropy in porous silicon layers has been reported by several research groups based on their results on the degree of linear polarization in photoluminescence. In this project, we have observed a significant anisotropy in refractive indices for the first time. The anisotropy is such that the largest index appears in a direction 90-degree off that of the largest degree of linear polarization. This can be explained by assuming that large silicon structures are responsible for refractive index anisotropy while small structures govern luminescence anisotropy.2. Effect of excitation wavelengths on lumin … More escence anisotropyWe have observed that the luminescence anisotropy is affected largely by the excitation wavelength. Our experimental results show that this is not due to the effect of luminescence from oxides but is originating from depth inhomogeneity.3. Experimental observation and computer simulation of the strong anisotropy in samples irradiated with infrared laser lightWe have used a 1.06-μm Nd : YAG laser of relatively high intensity as an illumination source and obtained very strong luminescence anisotropy. The result can be reproduced well by computer simulation based on a two-dimensional model in which linear oscillators are distributed in a plane.4. Effect of anodization conditionsWe have shown that luminescent porous silicon samples can be obtained by using extremely dilute HF solutions with HF concentrations down to 0.1%. No significant luminescence anisotropy, however, has been observed in these samples, implying that anodization current density largely affects the formation of anisotropy. Less