Pore evolution in metal assisted chemically etched (MACE) porous Si

到目前为止，对MACE过程的研究主要基于二维扫描电子和透射电子显微照片，这使得一些结论具有很强的推测性。由于金属催化剂在体硅中的运动是高度复杂的，从这种平面电子显微镜中得出的结论可能不能反映实际现象。因此，三维成像是必要的，以可视化蚀刻孔和了解潜在的动态。该项目将集中研究金属辅助化学蚀刻（MACE）硅的蚀刻行为，使用我们实验室发明的新型原子层沉积-填充-蚀刻-成像（AFEI）技术。因此，该项目的总体目标是将目前涉及MACE的假设进行测试，因为我们已经在第一次3D成像实验中看到了偏差。这将导致对蚀刻过程、催化剂迁移和孔隙演化的潜在动力学有更深的了解，这将使控制和设计未来的应用成为可能。最后，我们将开发物理化学模型和计算机模拟，以更深入地了解MACE过程和预测催化剂的运动。

The MACE process has been investigated up to now mostly based on 2D scanning electron and transmission electron micrographs making some of the conclusions highly speculative. The conclusions derived from such planar electron microscopy may not reflect the actual phenomena as the movement of the metal catalyst in bulk Si is highly complex. Hence, 3D imaging is mandatory to visualize the etched pores and to understand the underlying dynamics. The project will concentrate on the investigation of the etching behavior of metal assisted chemical etching (MACE) of Silicon using the novel Atomic Layer Deposition-Fill-Etch-Imaging (AFEI) technique invented in our labs. Thus, the overall aim of the project is to put the current hypotheses involving MACE to test as we have already seen deviations in first 3D imaging experiments. This will lead to a deeper understanding of the underlying dynamics of the etching process, catalyst migration, and pore evolution, which will enable control and design of future applications. Finally we will develop physical-chemical models as well as computer simulations for the deeper understanding of the MACE process and prediction of catalyst movement.