Pore evolution in metal assisted chemically etched (MACE) porous Si

到目前为止，主要基于2D扫描电子和透射电子显微照片对MACE过程进行了研究，使得一些结论具有高度推测性。由于金属催化剂在体硅中的运动是高度复杂的，因此从这种平面电子显微镜得出的结论可能不能反映实际现象。因此，3D成像是强制性的，以可视化蚀刻孔并了解潜在的动力学。该项目将集中在金属辅助化学蚀刻（MACE）的硅的蚀刻行为的调查使用新的原子层沉积填充蚀刻成像（AFEI）技术发明在我们的实验室。因此，该项目的总体目标是对当前涉及MACE的假设进行测试，因为我们已经在第一次3D成像实验中看到了偏差。这将导致对蚀刻过程、催化剂迁移和孔隙演变的潜在动力学的更深入理解，这将使未来应用的控制和设计成为可能。最后，我们将开发物理化学模型以及计算机模拟，以更深入地了解MACE过程和预测催化剂运动。

The MACE process has been investigated up to now mostly based on 2D scanning electron and transmission electron micrographs making some of the conclusions highly speculative. The conclusions derived from such planar electron microscopy may not reflect the actual phenomena as the movement of the metal catalyst in bulk Si is highly complex. Hence, 3D imaging is mandatory to visualize the etched pores and to understand the underlying dynamics. The project will concentrate on the investigation of the etching behavior of metal assisted chemical etching (MACE) of Silicon using the novel Atomic Layer Deposition-Fill-Etch-Imaging (AFEI) technique invented in our labs. Thus, the overall aim of the project is to put the current hypotheses involving MACE to test as we have already seen deviations in first 3D imaging experiments. This will lead to a deeper understanding of the underlying dynamics of the etching process, catalyst migration, and pore evolution, which will enable control and design of future applications. Finally we will develop physical-chemical models as well as computer simulations for the deeper understanding of the MACE process and prediction of catalyst movement.