Formation process of surface hydrogenated Si nanocrystallites and its optical properties.
Formation process of surface hydrogenated Si nanocrystallites and its optical properties.
批准号:
16560018
负责人:
UMEZU Ikurou
金额:
$2.3万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2004
资助国家:
日本
项目状态:
已结题
起止时间:
2004 至 2006
中文摘要
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英文摘要
Formation process of surface hydrogenated Si nancrystallites by pulsed laser ablation in hydrogen gas and properties of deposited material are clarified in this research. The deposit prepared by this method consists of nanocrystalline primary structure and aggregated secondary structures. The size of primary structure is insensitive to the background gas pressure, while the structure of secondary structure depends on the background gas pressure. From the analysis of the fractal structure, it is clarified that correlation between plume size and substrate-target distance determines the secondary structure. Hydrogen gas pressure acts as parameter to control the plume size. When the plume size is smaller than the substrate target distance, cluster-cluster aggregation in the plume results in fiber like aggregated secondary structure. This result indicates that the aggregated secondary structure can be controlled by the plume size though the hydrogen gas pressure. The nanocrystallites are not an alloy of silicon and hydrogen but are surface hydrogenated silicon nanocrystal. This means that the hydrogenation takes place after the formation of the nanocrystal. The temperature to stabilize Si-H bond is lower than the melting point of the silicon nanocrystal. Therefore, hydrogenation starts after the formation of the nanocrystallites. Eventually, the Si-H bonds are stabilized on the surface. The porosity of the hydrogenated sample is larger than that of the nonhydrogenated one. This is because surface hydrogenated nanocrystal prevent aggregation. The optical band gap of the surface hydrogenated sample is larger than that of nonhydrogenated one. This band gap shift corresponds to the porosity of the sample. The surface hydrogenation stabilizes the surface and reduces the interaction between the nanocystallites. The pulsed laser ablation of silicon in hydrogen gas is a promising method to control the secondary structure and optical properties of the material.
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Preparation of surface controlled silicon nanocrystallites by pulsed laser ablation
脉冲激光烧蚀制备表面控制硅纳米晶
DOI:
--
发表时间:
2005
期刊:
The Proceedings of the 27th International Conference on the Physics of Semiconductors
影响因子:
--
作者:
[I.UMEZU, M.Inada, T.Makino, A.Sugimura]
通讯作者:
A.Sugimura
Temperature dependence of time-resolved luminescence spectra for ID excitons in single-walled carbon nanotubes in micelles.
胶束中单壁碳纳米管中 ID 激子的时间分辨发光光谱的温度依赖性。
DOI:
--
发表时间:
2005
期刊:
Journal of Luminescence 112
影响因子:
--
作者:
[M.Ichida, I.Umezu, H.Kataura, M.Kimura, S.Suzuki, Y.Achiba, H.Ando]
通讯作者:
H.Ando
Spatial fluctuation enhancement and nonradiative-recombination-center generation due to high Si-doping into GaAs/AlAs short-period-superlattices
GaAs/AlAs 短周期超晶格中高硅掺杂导致空间涨落增强和非辐射复合中心生成
DOI:
--
发表时间:
2006
期刊:
Physica B 376-377
影响因子:
--
作者:
[H.Kobori, A.Shigetani, I.Umezu, A.Sugimura]
通讯作者:
A.Sugimura
Plume analysis during pulsed laser ablation of Si target in hydrogen gas
氢气中脉冲激光烧蚀硅靶材过程中的羽流分析
DOI:
--
发表时间:
2006
期刊:
Mem. Konan Univ.,Sci.&Eng. Ser. 53
影响因子:
--
作者:
[M.Takata, T.Yoshida, I.Umezu, A.Sugimura]
通讯作者:
A.Sugimura
Resonance energy transfer based on shallow and deep energy levels of biotin-polyethylene glycol/polyamine stabilized CdS quantum dots
基于生物素-聚乙二醇/聚胺稳定CdS量子点浅能级和深能级的共振能量转移
DOI:
--
发表时间:
2006
期刊:
APPL. PHYS. LETT. 89
影响因子:
--
作者:
[W.L Y.Tokuhiro, I.Umezu, A.Sugimura, Y.Nagasaki]
通讯作者:
Y.Nagasaki
共 30 条
structural control of nano-materials by pulsed excitation processes
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批准号:21510120
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.91万
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财政年份:2009
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负责人:UMEZU Ikurou
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依托单位:
Control of fractal dimension of Si nanocryatal assembly and its effect on the optical properties
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批准号:19510112
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.66万
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财政年份:2007
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负责人:UMEZU Ikurou
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依托单位:
Preparation of surface controlled Si nanocrystal by pulsed laser ablation and observation of its optical properties
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批准号:13650021
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.05万
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财政年份:2001
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负责人:UMEZU Ikurou
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依托单位:
Nonradiative recombination processes in nanocrystalline silicon
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批准号:11650024
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.37万
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财政年份:1999
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负责人:UMEZU Ikurou
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依托单位:
海外基金