Control of biexciton localization and optical functionality in nitride-based ultraviolet alloy semiconductors

氮化物基紫外合金半导体中双激子局域化和光学功能的控制

• 批准号: 16560274
• 负责人: YAMADA Yoichi
• 金额: $ 2.43万
• 依托单位: Yamaguchi University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560274/
• 关键词: exciton; biexciton; alloy semiconductor; localization; Stokes shift; two-photon absorption; nitride-based semiconductor; exciton engineering; 液晶半導体; 局在時間; 生成時間

We have studied the effect of localization due to alloy disorder on biexcitons in Ga-rich Al_x,Ga_<1-x>N ternary alloy epitaxial layers. We measured photoluminescence excitation spectra of biexcitons for five samples with different aluminum compositions from x=0.019 to 0.092. On the basis of the two-photon absorption of biexcitons, the binding energy of biexcitons was obtained as a function of aluminum composition. The strong enhancement of the biexciton binding energy was observed with an increase in aluminum composition. The biexciton binding energy in the Al_<0.002>Ga_<0.908>N ternary alloy epitaxial layer was estimated to be 16.6 meV, which was three times as large as the biexciton binding energy in GaN (5.6 meV). In addition, we defined the Stokes shift of biexcitons in order to evaluate the degree of biexciton localization quantitatively. We observed the strong localization of biexcitons. The ratio of biexciton Stokes shift relative to exciton Stokes shift was estimated to be 0.8 … More . The strong localization of biexcitons resulted in the strong enhancement of the biexciton binding energy. We have also studied the dynamical behavior of localized biexcitons in Al_xGa_<1-x>N ternary alloys by means of time-resolved luminescence spectroscopy. We analyzed the observed time-dependent luminescence using rate equations which expressed population dynamics of biexcitons and single excitons. The analysis was modified by considering the localization time of both biexcitons and single excitons individually in order to take account of the effect of localization due to alloy disorder. The analysis revealed the increase in the localization time of both excitons and biexcitons with increasing aluminum composition, which resulted from the increase in the degree of localization due to alloy disorder. The analysis also revealed the unchanged formation time of biexcitons in the present compositional range (x<0.1), which indicated the independence of the formation rate of biexcitons from the localization depth of single excitons. Less

研究了富Ga Al_x，Ga_ N三元合金外延层中合金无序局域化对双激子的影响<1-x>。我们测量了五个样品的双激子的光致发光激发光谱与不同的铝成分从x=0.019到0.092。基于双激子的双光子吸收，得到了双激子的结合能与铝组分的关系。双激子的结合能的强烈增强，观察到与铝的组合物的增加。Al_ Ga_ N三元合金外延层中的双激子结合能<0.002><0.908>为16.6meV，是GaN中双激子结合能（5.6meV）的3倍。此外，为了定量地评价双激子局域化的程度，我们定义了双激子的斯托克斯位移。我们观察到双激子的强局域化。双激子斯托克斯位移与激子斯托克斯位移之比约为0.8 ...更多信息 .双激子的强局域化导致了双激子结合能的强增强。我们还用时间分辨发光光谱研究了Al_xGa_ N三元合金中局域双激子的动力学行为<1-x>。我们分析了所观察到的随时间变化的发光速率方程表示的双激子和单激子的人口动态。通过考虑双激子和单激子各自的局域化时间来修改分析，以考虑由于合金无序而引起的局域化的影响。分析表明，随着铝组分的增加，激子和双激子的局域化时间增加，这是由于合金无序导致的局域化程度增加。分析还揭示了在当前组分范围内（x&lt;0.1）双激子的形成时间不变，这表明双激子的形成速率与单激子的局域深度无关。少

项目成果

Time-resolved nonlinear luminescence of excitonic transitions in GaN

• DOI: 10.1063/1.1755853
• 发表时间: 2004-06
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Y. Yamada;Y. Yoshida;T. Taguchi;H. Miyake;K. Hiramatsu;Y. Iyechika;T. Maeda

AlGaN混晶薄膜における励起子分子のストークスシフト

AlGaN混晶薄膜中激子分子的斯托克斯位移

• 发表时间: 2005
• 期刊: 第16回光物性研究会論文集
• 作者: 加藤博臣;船津健太郎;星陽一;分担執筆;Yoichi Yamada;Naohiko Shinomura;Y.Yamada et al.;N.Shinomura et al.;Yoichi Yamada;室谷 英彰;中村恒三;Y.Yamada;H.Murotani et al.;K.Nakamura et al.;室谷英彰
• 通讯作者: 室谷英彰

Spatially resolved cathodoluminescence study on AlGaN layer fabricated by air‐bridged lateral epitaxial growth

• DOI: 10.1002/pssb.200405073
• 发表时间: 2004-10
• 期刊: physica status solidi (b)
• 作者: A. Ishibashi;Y. Kawaguchi;G. Sugahara;T. Shimamoto;T. Yokogawa;Y. Yamada;Y. Ueki;Kohzo Nakamura;T. Taguchi

Stokes shift of biexcitons inAlxGa1−xNepitaxial layers

AlxGa1−x外延层中双激子的斯托克斯位移

• DOI: 10.1103/physrevb.70.195210
• 发表时间: 2004
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Y. Yamada;Y. Ueki;Kohzo Nakamura;T. Taguchi;A. Ishibashi;Y. Kawaguchi;T. Yokogawa
• 通讯作者: T. Yokogawa

AlGaN混晶半導体における励起子分子のストークスシフト

AlGaN混晶半导体中激子分子的斯托克斯位移

• 发表时间: 2005
• 期刊: 第16回光物性研究会論文集
• 作者: 加藤博臣;船津健太郎;星陽一;分担執筆;Yoichi Yamada;Naohiko Shinomura;Y.Yamada et al.;N.Shinomura et al.;Yoichi Yamada;室谷 英彰
• 通讯作者: 室谷 英彰