Study on single photon emission utilizing isoelectronic traps

利用等电子陷阱的单光子发射研究

• 批准号: 17560004
• 负责人: YAGUCHI Hiroyuki
• 金额: $ 2.24万
• 依托单位: Saitama University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560004/
• 关键词: epitaxial; crystal engineering; light source technology; advanced functional device; optical properties; single photon; isoelectronic trap

Single photon emitting devices are expected to play an important role in the quantum information technology, such as quantum cryptography and quantum computing. In this study, we have studied the properties of photoluminescence due to single isoelectronic traps in nitrogen delta-doped GaAs and GaP to examine the prospect for applications to single photon emitting devices. We have optimized growth conditions to obtain nitrogen pairs with specific configurations. As a result, we have successfully observed sharp photoluminescence lines due to a limited number of isoelectronic traps within a diameter of 1 μm for nitrogen delta-doped GaAs with low nitrogen concentrations. This result shows good prospects for the single photon emitting device utilizing single isoelectronic traps. We have also observed twin photoluminescence peaks from single isoelectronic traps due to nitrogen pairs in nitrogen delta-doped GaAs. The twin photoluminescence peaks showed almost the same intensity and linear polarizations which are completely orthogonal to each other. This unique phenomenon has prospects of applications to novel optoelectronic devices. Furthermore, we have investigated the excitation power density and nitrogen concentration dependence of the changes in the radiative efficiency of GaAsN alloys to examine the mechanism of the novel phenomenon that photoexcitation at low temperatures improves the radiative efficiency. We have found that the radiative efficiency improvement is closely related to local structural changes by using in-situ micro Raman scattering spectroscopy.

单光子发射器件有望在量子密码学和量子计算等量子信息技术中发挥重要作用。在本研究中，我们研究了氮掺杂GaAs和GaP中单等电子阱的光致发光特性，以探讨其在单光子发射器件中的应用前景。我们优化了生长条件，以获得具有特定构型的氮对。结果表明，对于低氮浓度的氮掺杂砷化镓，由于直径为1 μm的等电子阱数量有限，我们成功地观察到尖锐的光致发光线。这一结果显示了利用单个等电子阱的单光子发射器件的良好前景。在氮δ掺杂的砷化镓中，我们还观察到单等电子阱中由于氮对而产生的双发光峰。双光致发光峰表现出几乎相同的强度和完全正交的线性极化。这种独特的现象在新型光电器件中具有应用前景。此外，我们还研究了激发功率密度和氮浓度对GaAsN合金辐射效率变化的依赖关系，以探讨低温光激发提高辐射效率这一新现象的机制。利用原位微拉曼散射光谱研究发现，辐射效率的提高与局部结构变化密切相关。

项目成果

Photoluminescence study of isoelectronic traps in dilute GaAsN alloys

稀GaAsN合金中等电子陷阱的光致发光研究

• 发表时间: 2007
• 期刊: Physica Status Solidi (c) (未定)(to be published)
• 作者: Yuezhen Bin;Atsuko Yamanaka;Qingyun Chen;Ying Xi;Xiaowen Jiang;Masaru Matsuo;H.Yaguchi et al.
• 通讯作者: H.Yaguchi et al.

Photo-induced improvement of radiative efficient and structural changes in GaAsN alloys

GaAsN 合金的光致辐射效率和结构变化的改善

• 发表时间: 2006
• 期刊: Physica Status Solidi (c) Vol.e,No.6
• 作者: Yuezhen Bin;Mariko Mine;Ai Koganemaru;Xiaowen Jiang;Masaru Matsuo;H.Yaguchi et al.
• 通讯作者: H.Yaguchi et al.

Micro-Raman study on the improvement of luminescence efficiency of GaAsN alloys

提高GaAsN合金发光效率的显微拉曼研究

• 发表时间: 2007
• 期刊: Journal of Crystal Growth Vol.298
• 作者: K. Tanioka;Y. Endo;Y. Hijikata;H. Yaguchi;S. Yoshida;M. Yoshita;H. Akiyama and K. Onabe
• 通讯作者: H. Akiyama and K. Onabe

Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys

GaAsN 合金中光致辐射效率的提高和结构变化

• 发表时间: 2006
• 期刊: Phys. Stat. Sol. (c)3
• 作者: H. Yaguchi;T. Morioke;T. Aoki;H. Shimizu;Y. Hijikata;S. Yoshida;M. Yoshita;H. Akiyama;N. Usami;D. Aoki;K. Onabe
• 通讯作者: K. Onabe

Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

有机金属气相外延生长氮δ掺杂GaAs的微光致发光研究

• 发表时间: 2007
• 期刊: Journal of Crystal Growth Vol.298
• 作者: Y. Endo;K. Tanioka;Y. Hijikata;H. Yaguchi;S. Yoshida;M. Yoshita;H. Akiyama;W. Ono;F. Nakajima;R. Katayama;and K.Onabe
• 通讯作者: and K.Onabe