权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Porous Silicon Formation by Means of Metal Particle Enhanced Etching and Its Structure Control

金属颗粒强化刻蚀多孔硅形成及其结构控制

基本信息

批准号：
17560638
负责人：
YAE Shinji
金额：
$ 0.9万
依托单位：
UNIVERSITY OF HYOGO
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

项目摘要

(1) We investigate the electroless displacement deposition of metal particles (Pt, Rh, Pd, Cu, Ag, and Au) onto n-Si wafers from a metal-salt solution containing HF. The particle density of metals varies widely, depending on the kind of metal. Deposited metals can be classified into two types of nucleation behavior. One consists of the platinum group elements, which display lower particle densities than elements of the other group and depend on the type of pretreatment of the n-Si wafer. The second group consists of the copper group elements, which display higher particle density than the first group and are independent of pretreatment. The size of deposited particles decreases from hundreds nm to ten nm as the particle density increases.(2) Metal-particle-enhanced HF etching of Si can produce micrometer-sized macroporous and nanometer-sized microporous Si by simple immersion of metal-particle-modified Si in a HF aqueous solution without a bias or a particular oxidizing agent. The etching rate of Si and the structure of produced porous Si are changed by the dissolved oxygen concentration of the HF solution and the photoillumination intensity on Si during etching. For n-Si, porous layer is only formed on the metal particle deposited area of the wafers. Both macro and microporous layers are formed on n-Si wafers modified with Pt, gold, or silver particles. Pd particles show a unique behavior in which the etching of n-Si proceeds at a high rate accompanying hydrogen evolution under dark conditions and the absence of dissolved oxygen. For Pt-particle-deposited p-Si, porous layers are formed by HF immersion. Under continuous photoillumination, porous Si is formed mainly on the non-photoirradiation side surface of p-Si, as opposed to the photoirradiation side of n-Si.

(1) 我们研究了从含有 HF 的金属盐溶液中将金属颗粒（Pt、Rh、Pd、Cu、Ag 和 Au）化学置换沉积到 n-Si 晶圆上。金属的颗粒密度根据金属种类的不同而有很大差异。沉积金属可分为两种类型的成核行为。一种由铂族元素组成，其颗粒密度低于另一族元素，并且取决于 n-Si 晶片的预处理类型。第二组由铜族元素组成，其显示出比第一组更高的颗粒密度并且与预处理无关。随着颗粒密度的增加，沉积颗粒的尺寸从数百纳米减小到十纳米。（2）金属颗粒增强的硅的HF蚀刻可以通过将金属颗粒改性的硅简单地浸入HF水溶液中而产生微米尺寸的大孔和纳米尺寸的微孔硅，无需偏压或特定的氧化剂。 Si的蚀刻速率和生成的多孔Si的结构因HF溶液的溶解氧浓度和蚀刻期间Si上的光照射强度而改变。对于n-Si，多孔层仅形成在晶片的金属颗粒沉积区域上。大孔层和微孔层均在用 Pt、金或银颗粒改性的 n-Si 晶片上形成。 Pd 颗粒表现出一种独特的行为，其中 n-Si 的蚀刻以高速率进行，并伴随着在黑暗条件和不存在溶解氧的情况下析氢。对于 Pt 颗粒沉积的 p-Si，通过 HF 浸没形成多孔层。在连续光照射下，多孔Si主要形成在p-Si的非光照射侧表面上，而不是n-Si的光照射侧。