Study about the influence of dislocation on devices for practical application of GaN power devices
Study about the influence of dislocation on devices for practical application of GaN power devices
批准号:
17K17808
负责人:
Tanaka Atsushi
金额:
$2.75万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2017
资助国家:
日本
项目状态:
已结题
起止时间:
2017-04-01 至 2020-03-31
中文摘要
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英文摘要
期刊论文(26)
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DOI:
--
发表时间:
2018
期刊:
影响因子:
--
作者:
[M. Takahashi, K. Sone, A. Tanaka, S. Usami, M. Deki, M. Kushimoto, K. Nagamatsu, S. Nitta, Y. Honda, and H. Amano,]
通讯作者:
and H. Amano,
DOI:
10.7567/1882-0786/aafdb9
发表时间:
2019-02-01
期刊:
APPLIED PHYSICS EXPRESS
影响因子:
2.3
作者:
[Fukushima, Hayata, Usami, Shigeyoshi, Amano, Hiroshi]
通讯作者:
Amano, Hiroshi
DOI:
10.1063/1.4994627
发表时间:
2017-09
期刊:
Applied Physics Letters
影响因子:
4
作者:
[L. Sang;B. Ren;M. Sumiya;M. Liao;Y. Koide;A. Tanaka;Yujin Cho;Y. Harada;T. Nabatame;T. Sekiguchi;S. Usami;Y. Honda;H. Amano]
通讯作者:
L. Sang;B. Ren;M. Sumiya;M. Liao;Y. Koide;A. Tanaka;Yujin Cho;Y. Harada;T. Nabatame;T. Sekiguchi;S. Usami;Y. Honda;H. Amano
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods
使用 3DAP 和 LACBED 方法研究独立式 GaN 衬底上 P-N 二极管漏电的根源
DOI:
--
发表时间:
2018
期刊:
影响因子:
--
作者:
[Shigeyoshi Usami, Yoshihiro Sugawara, Yong-Zhao Yao, Yukari Ishikawa, Norihito Mayama, Kazuya Toda, Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano]
通讯作者:
Hiroshi Amano
Comparing high-purity c-and m-plane GaN layers for Schottky barrier diodes Grown homoepitaxially by metalorganic vapor phase epitaxy
比较通过金属有机气相外延同质外延生长的肖特基势垒二极管的高纯度 c 面和 m 面 GaN 层
DOI:
--
发表时间:
2018
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Kentaro Nagamatsu, Yuto Ando, Zheng Ye, Osmane Barry, Atsushi Tanaka, Manato Deki, Shugo Nitta, Yoshio Honda, Markus Pristovsek, Hiroshi Amano]
通讯作者:
Hiroshi Amano
共 23 条
Direct observation of electric field distribution in GaN power devices
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批准号:20K04578
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项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.83万
-
财政年份:2020
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负责人:Tanaka Atsushi
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依托单位:
Characterization of active layer of reverse osmosis membrane by electrochemical impedance spectroscopy in quasi-filtration conditions
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批准号:18K04809
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.66万
-
财政年份:2018
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负责人:Tanaka Atsushi
-
依托单位:
Characterization of diffuse-type gastric cancer with CLDN18 fusion and drug discovery for it
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批准号:17K15636
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项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$2.5万
-
财政年份:2017
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负责人:Tanaka Atsushi
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依托单位:
Molecular basis of Treg-specific TCR signaling regulation
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批准号:17K15723
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项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$2.66万
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财政年份:2017
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负责人:Tanaka Atsushi
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依托单位:
Investigation of mitochondrial-derived vesicles in neurodegenerative disease
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批准号:16K19047
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项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$2.5万
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财政年份:2016
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负责人:Tanaka Atsushi
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依托单位:
Determination of cellular factors involved in chikungunya virus infection
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批准号:16K09934
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.0万
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财政年份:2016
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负责人:Tanaka Atsushi
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依托单位:
Elucidating the mechanism of autoimmune induction by self-reactive T and regulatory T cells
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批准号:26860331
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项目类别:Grant-in-Aid for Young Scientists (B)
-
资助金额:$2.5万
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财政年份:2014
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负责人:Tanaka Atsushi
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依托单位:
Determination of cellular factors involved in chikungunya virus infection
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批准号:25461510
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.16万
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财政年份:2013
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负责人:Tanaka Atsushi
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依托单位:
Association between intraplaque macrophage level and plaque rupture
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批准号:24591068
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.41万
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财政年份:2012
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负责人:Tanaka Atsushi
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依托单位:
海外基金