Formation of Strained Ge Channel and Material Evaluation for High performance ULSI

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In this study, we established the fabrication of strained SiGe-on-insulator(SGOI) using Ge condensation by dry oxidation and the fabrication of high permittivity(High-k) gate insulator on Ge. Through these researches, we obtained the following results. The SGOI with a Ge fraction of 50% showed high strain ratio and hole channel mobility, which were 1. 7% and 570 cm^2/V・s, respectively. We achieved the High-k/Ge gate stack with the performances of an equivalent SiO_2 thickness(EOT) of 1. 0 nm, an interface state density of 9×10^<11> cm^<-2> eV^<-1>, and a leakage current of 4 orders of magnitude lower than SiO_2 with the same EOT. Also, we fabricated n-and p-MOSFET and achieved an electron mobility of 1097 cm^2/V・s and a hole mobility of 376 cm^2/V・s, which mean approximately 1. 5 times enhancement compared with Si.