Formation of Strained Ge Channel and Material Evaluation for High performance ULSI

在这项研究中，我们发现了利用干燥氧化法对Ge绝缘体（SGOI）制造的Ge浓缩物和高渗透性（High-k） Gate绝缘体的制造。通过这些研究，我们获得了以下的结果。SGOI与50%的Ge分数显示了高应变率和洞通道流动性，是1。7%和570厘米^2/V·s，相应地。我们实现了高k/Ge门堆栈，其性能相当于SiO_2厚度（EOT）的1. 0 nm，是9×10^<11>cm^&lt;-2&gt; eV^&lt;-1&gt;的接口状态密度，并且具有低于SiO_2的4个峰值的泄漏率。此外，我们制造了n-和p-MOSFET，实现了1097厘米2/V·s的电子流动性和376厘米2/V·s的空穴流动性，这意味着接近1。5次的增强与Si比较。

In this study, we established the fabrication of strained SiGe-on-insulator(SGOI) using Ge condensation by dry oxidation and the fabrication of high permittivity(High-k) gate insulator on Ge. Through these researches, we obtained the following results. The SGOI with a Ge fraction of 50% showed high strain ratio and hole channel mobility, which were 1. 7% and 570 cm^2/V・s, respectively. We achieved the High-k/Ge gate stack with the performances of an equivalent SiO_2 thickness(EOT) of 1. 0 nm, an interface state density of 9×10^<11> cm^<-2> eV^<-1>, and a leakage current of 4 orders of magnitude lower than SiO_2 with the same EOT. Also, we fabricated n-and p-MOSFET and achieved an electron mobility of 1097 cm^2/V・s and a hole mobility of 376 cm^2/V・s, which mean approximately 1. 5 times enhancement compared with Si.